Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells
A method used in forming a memory array comprising strings of memory cells comprises forming a conductor tier comprising conductor material on a substrate. A stack comprising vertically-alternating first tiers and second tiers is formed above the conductor tier. The stack comprises laterally-spaced memory-block regions that have horizontally-elongated trenches there-between. Channel-material strings extend through the first tiers and the second tiers. Material of the first tiers is of different composition from material of the second tiers. A lowest of the first tiers comprises sacrificial material of different composition from the first-tier material there-above and from the second-tier material tier there-above. The sacrificial material is of different composition from that of an uppermost portion of the conductor material of the conductor tier. The sacrificial material is isotropically etched selectively relative to the uppermost portion of the conductor material of the conductor tier, selectively relative to the first-tier material there-above, and selectively relative to the second-tier material there-above. After the isotropic etching, conductive material is formed in the lowest first tier that directly electrically couples together the channel material of individual of the channel-material strings and the conductor material of the conductor tier. Other methods and structure independent of method are disclosed.
1. A memory array comprising strings of memory cells, comprising:
a conductor tier comprising conductor material;
laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above the conductor tier, channel-material strings of memory cells extending through the insulative tiers and the conductive tiers, conducting material of a lowest of the conductive tiers directly electrically coupling together the channel material of individual of the channel-material strings and the conductor material of the conductor tier;
intervening material laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks, the intervening material comprising insulating material; and
the conductor material in the conductor tier comprising conductively-doped semiconductive material having one of a primary n-type or p-type conductivity-producing dopant therein, at least an uppermost portion of the conductor material in the conductor tier comprising a secondary dopant of different composition from that of the primary dopant.
2. The memory array of claim 1 wherein the one is the primary n-type conductivity-producing dopant.
3. The memory array of claim 1 wherein the one is the primary p-type conductivity-producing dopant.
4. The memory array of claim 1 wherein the different primary and secondary dopants are of the same n or p type.
5. The memory array of claim 1 wherein the different primary and secondary dopants are of different n or p type.
6. The memory array of claim 1 wherein the secondary dopant is one or more of carbon, nitrogen, boron, arsenic, or metal material.
7. The memory array of claim 1 wherein the secondary dopant is one or more of Sb, Bi, Li, Al, or In.
8. The memory array of claim 1 wherein the uppermost portion of the conductor material of the conductor tier comprises polysilicon.
9. The memory array of claim 1 wherein the secondary dopant in the uppermost portion is at a concentration of at least 1×10 14 atoms/cm 3 in said uppermost portion.
10. The memory array of claim 1 comprising multiple different composition secondary dopants.
11. The memory array of claim 1 wherein the secondary dopant comprises Sb.
12. The memory array of claim 1 wherein the secondary dopant comprises Bi.
13. The memory array of claim 1 wherein the secondary dopant comprises Li.
14. The memory array of claim 1 wherein the secondary dopant comprises Al.
15. The memory array of claim 1 wherein the secondary dopant comprises In.
16. A memory array comprising strings of memory cells, comprising:
a conductor tier comprising n-type conductively-doped polysilicon having a primary n-type conductivity-producing dopant therein;
laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers directly above the conductor tier, channel-material strings of memory cells extending through the insulative tiers and the conductive tiers, a lowest of the conductive tiers comprising n-type conductively-doped polysilicon against directly the n-type conductively-doped polysilicon of the conductor tier and directly against a sidewall of channel material of the channel-material strings in the lowest conductive tier;
intervening material laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks, the intervening material comprising insulating material; and
at least an uppermost portion of the n-type conductively-doped polysilicon in the conductor tier comprising a secondary dopant of different composition from that of the primary dopant.
17. The memory array of claim 16 wherein the primary dopant is P and the secondary dopant is one or more of C, N, B, As, Sb, Bi, Li, Al, In, or metal material.
18. The memory array of claim 16 wherein the primary dopant is P and the secondary dopant comprises C.
19. The memory array of claim 16 wherein the primary dopant is P and the secondary dopant comprises N.
20. The memory array of claim 16 wherein the primary dopant is P and the secondary dopant comprises B.
21. The memory array of claim 16 wherein the primary dopant is P and the secondary dopant comprises As.
22. The memory array of claim 16 wherein the primary dopant is P and the secondary dopant comprises Sb.
23. The memory array of claim 16 wherein the primary dopant is P and the secondary dopant comprises Bi.
24. The memory array of claim 16 wherein the primary dopant is P and the secondary dopant comprises Li.
25. The memory array of claim 16 wherein the primary dopant is P and the secondary dopant comprises Al.
26. The memory array of claim 16 wherein the primary dopant is P and the secondary dopant comprises In.
27. The memory array of claim 16 wherein the primary dopant is P and the secondary dopant comprises metal material.