High density through silicon conductive structures
View Patent ↗A semiconductor device is disclosed. The semiconductor device includes a first substrate. The first substrate includes a first dielectric layer, and a vertical conductive area, where the vertical conductive area includes one or more vertical conductive structures extending through the first dielectric layer, where each line segment of a non-square quadrilateral contacts at least one of the one or more vertical conductive structures. The vertical conductive area also includes a continuous conductive guard ring structure in the first dielectric layer, where the continuous conductive guard ring structure surrounds the one or more vertical conductive structures. The semiconductor device also includes a second substrate, including a first conductor, and a second conductor, where the first conductor of the second substrate is electrically connected to at least one of the vertical conductive structures of the first substrate.
1. A semiconductor device, comprising:
a first substrate, comprising:
a first dielectric layer,
a vertical conductive area, wherein the vertical conductive area comprises:
a plurality of vertical conductive structures extending through the first dielectric layer, the plurality of vertical conductive structures comprising a first vertical conductive structure and a second vertical conductive structure, and
a continuous conductive guard ring structure in the first dielectric layer, wherein the continuous conductive guard ring structure comprises a first guard ring portion laterally enclosing the first vertical conductive structure and a second guard ring portion laterally enclosing the second vertical conductive structure, and the first guard ring portion and the second guard ring portion share an overlapping portion; and
a second substrate, comprising:
a first conductor, and
a second conductor,
wherein the first conductor of the second substrate is electrically connected to at least one of the vertical conductive structures of the first substrate.
2. The semiconductor device of claim 1 , wherein the first guard ring portion is circular, and the second guard ring portion is circular.
3. The semiconductor device of claim 1 , wherein the first guard ring portion is rectangular, and the second guard ring portion is rectangular.
4. The semiconductor device of claim 1 , wherein the first vertical conductive structure is characterized by a maximum length dimension greater than a maximum width dimension.
5. The semiconductor device of claim 1 , wherein the first vertical conductive structure is characterized by a serpentine configuration.
6. The semiconductor device of claim 1 , wherein the continuous conductive guard ring structure has a substantially circular portion.
7. The semiconductor device of claim 1 , wherein the continuous conductive guard ring structure has one or more substantially linear portions.
8. A semiconductor device, comprising:
a first substrate, comprising:
a first dielectric layer;
a plurality of vertical conductive structures extending through the first dielectric layer, the plurality of vertical conductive structures comprising a first vertical conductive structure and a second vertical conductive structure; and
a continuous conductive guard ring structure disposed in the first dielectric layer, wherein the continuous conductive guard ring structure comprises a first guard ring portion laterally enclosing the first vertical conductive structure and a second guard ring portion laterally enclosing the second vertical conductive structure, and the first guard ring portion and the second guard ring portion share an overlapping portion; and
a second substrate, comprising:
a first conductor; and
a second conductor; and
wherein the first conductor of the second substrate is electrically connected to at least one of the vertical conductive structures of the first substrate.
9. The semiconductor device of claim 8 , wherein the first guard ring portion is circular, and the second guard ring portion is circular.
10. The semiconductor device of claim 8 , wherein the first guard ring portion is rectangular, and the second guard ring portion is rectangular.
11. The semiconductor device of claim 8 , wherein the first vertical conductive structure is characterized by a maximum length dimension greater than a maximum width dimension.
12. The semiconductor device of claim 8 , wherein the first vertical conductive structure is characterized by a serpentine configuration.
13. The semiconductor device of claim 8 , wherein the continuous conductive guard ring structure has a substantially circular portion.
14. The semiconductor device of claim 8 , wherein the continuous conductive guard ring structure has one or more substantially linear portions.
15. A semiconductor structure, comprising:
a first substrate, comprising:
a first dielectric layer;
a plurality of vertical conductive structures extending through the first dielectric layer, the plurality of vertical conductive structures comprising a first vertical conductive structure and a second vertical conductive structure; and
a continuous conductive guard ring structure disposed in the first dielectric layer, wherein the continuous conductive guard ring structure comprises a first guard ring portion laterally enclosing the first vertical conductive structure and a second guard ring portion laterally enclosing the second vertical conductive structure, and the first guard ring portion and the second guard ring portion share an overlapping portion; and
a second substrate comprising a first conductor; and
wherein the first conductor of the second substrate is electrically connected to at least one of the vertical conductive structures of the first substrate.
16. The semiconductor structure of claim 15 , wherein the first guard ring portion is circular, and the second guard ring portion is circular.
17. The semiconductor structure of claim 15 , wherein the first guard ring portion is rectangular, and the second guard ring portion is rectangular.
18. The semiconductor structure of claim 15 , wherein the first vertical conductive structure is characterized by a maximum length dimension greater than a maximum width dimension.
19. The semiconductor structure of claim 15 , wherein the first vertical conductive structure is characterized by a serpentine configuration.
20. The semiconductor structure of claim 15 , wherein the continuous conductive guard ring structure has a substantially circular portion.