Method and apparatus for selective film formation in semiconductor substrate processing
There is provided a technique that includes: (a) forming a base film, which has a reactivity with a film-forming inhibitor higher than a reactivity between the film-forming inhibitor and an inner surface of a concave portion formed on a surface of a substrate, at least in an upper portion in the concave portion by supplying a pre-treatment gas to the substrate; (b) forming a film-forming inhibition layer on a portion of a surface of the base film, which is formed in the upper portion in the concave portion, by supplying the film-forming inhibitor to the substrate; and (c) growing a film starting from a portion in the concave portion where the film-forming inhibition layer is not formed, by supplying a film-forming gas to the substrate.
1. A method of processing a substrate, comprising:
(a) forming a base film, which has a reactivity with a film-forming inhibitor higher than a reactivity between the film-forming inhibitor and an inner surface of a concave portion formed on a surface of the substrate, at least in an upper portion in the concave portion by supplying a pre-treatment gas to the substrate;
(b) forming a film-forming inhibition layer on a portion of a surface of the base film, which is formed in the upper portion in the concave portion, by supplying the film-forming inhibitor to the substrate; and
(c) growing a film starting from a portion in the concave portion where the film-forming inhibition layer is not formed, by supplying a film-forming gas to the substrate,
wherein the base film is made of a first material and the film is made of a second material that is different from the first material.
2. The method of claim 1 , wherein in (a), an oxygen-containing film is formed as the base film.
3. The method of claim 1 , wherein in (a), a silicon- and oxygen-containing film is formed as the base film.
4. The method of claim 1 , wherein in (a), a silicon oxide film is formed as the base film.
5. The method of claim 1 , wherein in (a), the base film is selectively formed in the upper portion in the concave portion.
6. The method of claim 5 , wherein in (a), the base film is selectively deposited in the upper portion in the concave portion by supplying a precursor gas as the pre-treatment gas under a condition in which a gas phase reaction is predominant.
7. The method of claim 5 , wherein in (a), the base film is selectively deposited in the upper portion in the concave portion by alternately supplying a precursor gas and a modifying gas as the pre-treatment gas under a condition in which at least one selected from the group of consumption and deactivation of at least one selected from the group of the precursor gas and the modifying gas occurs in the upper portion in the concave portion.
8. The method of claim 5 , wherein in (a), a surface of a portion other than the upper portion in the concave portion is exposed with the base film left in the upper portion in the concave portion by supplying the pre-treatment gas, under a condition in which step coverage is deteriorated, to deposit the base film in the concave portion and then supplying an etching gas under a condition in which the base film is conformally etchable.
9. The method of claim 5 , wherein in (a), a surface of the upper portion in the concave portion is selectively modified to selectively form the base film in the upper portion in the concave portion by supplying a modifying gas as the pre-treatment gas under a condition in which at least one selected from the group of consumption and deactivation of the modifying gas occurs in the upper portion in the concave portion.
10. The method of claim 1 , wherein in (b), a fluorine-terminated layer is formed as the film-forming inhibition layer by supplying a fluorine-containing gas as the film-forming inhibitor.
11. The method of claim 1 , wherein in (b), a hydrocarbon group-terminated layer is formed as the film-forming inhibition layer by supplying a hydrocarbon group-containing gas as the film-forming inhibitor.
12. The method of claim 1 , wherein in (a), the base film is formed entirely in the concave portion.
13. The method of claim 12 , wherein in (a), the base film is formed in the concave portion by alternately supplying a precursor gas and a modifying gas as the pre-treatment gas to deposit the base film in the concave portion or by supplying the modifying gas as the pre-treatment gas to modify the inner surface of the concave portion.
14. The method of claim 12 , wherein in (b), the film-forming inhibition layer is selectively formed on a portion of the surface of the base film, which is formed in the upper portion in the concave portion.
15. The method of claim 14 , wherein in (b), the film-forming inhibitor is supplied under a condition in which at least one selected from the group of consumption and deactivation of the film-forming inhibitor occurs in the upper portion in the concave portion.
16. The method of claim 14 , wherein in (b), a fluorine-terminated layer is formed as the film-forming inhibition layer by supplying a fluorine-containing gas as the film-forming inhibitor.
17. The method of claim 14 , wherein in (b), a fluorine-terminated layer is formed as the film-forming inhibition layer by supplying a fluorine-containing gas as the film-forming inhibitor under a condition in which the fluorine-containing gas is thermally decomposed.
18. The method of claim 14 , wherein in (b), a fluorine-terminated layer is formed as the film-forming inhibition layer by plasma-exciting and supplying a fluorine-containing gas as the film-forming inhibitor.
19. The method of claim 14 , wherein in (b), a fluorine-terminated layer is formed as the film-forming inhibition layer by supplying a fluorine-containing gas and an additive gas reacting with the fluorine-containing gas as the film-forming inhibitor.
20. The method of claim 14 , wherein in (b), a hydrocarbon group-terminated layer is formed as the film-forming inhibition layer by supplying a hydrocarbon group-containing gas as the film-forming inhibitor.
21. The method of claim 1 , wherein before the film grows to the upper portion in the concave portion in (c), the film-forming inhibition layer for which at least one selected from the group of removal and invalidation is performed by an action of the film-forming gas is formed in (b).
22. A method of manufacturing a semiconductor device, comprising:
(a) forming a base film, which has a reactivity with a film-forming inhibitor higher than a reactivity between the film-forming inhibitor and an inner surface of a concave portion formed on a surface of a substrate, at least in an upper portion in the concave portion by supplying a pre-treatment gas to the substrate;
(b) forming a film-forming inhibition layer on a portion of a surface of the base film, which is formed in the upper portion in the concave portion, by supplying the film-forming inhibitor to the substrate; and
(c) growing a film starting from a portion in the concave portion where the film-forming inhibition layer is not formed, by supplying a film-forming gas to the substrate,
wherein the base film is made of a first material and the film is made of a second material that is different from the first material.