IP Library › Granted Patent US 12,243,845
Granted Patent B2
US 12,243,845 · App. 18/226,119 · Granted Mar 4, 2025

Method and structure to control the solder thickness for double sided cooling power module

Inventors: Tae Hwa Kim (Hwaseong-Si, KR); Myung Ill You (Gwangju, KR)
Assignees: Hyundai Motor Company; Kia Corporation
H01L24/29H01L23/3675H01L24/11H01L24/13H01L2224/29018
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,243,845
App. No.
18/226,119
Granted
Mar 4, 2025
Kind
B2
Abstract

In a soldering structure, a power module having the same, and a method for manufacturing the power module configured for constantly determining a height of a power module when the power module is manufactured, the soldering structure may include a soldering target portion; a metal layer including a bonding surface having a bonding region in which the soldering target portion is bonded by solder; and at least one wire located in the solder within the bonding region.

Claims (5)

1. A method for manufacturing a power module, the method comprising:

bonding at least one wire having a convex portion which is convex upward to a bonding region of an upper surface of a first metal layer of a first substrate having the first metal layer;

manufacturing a first portion by disposing a spacer on the bonding region to be in contact with the convex portion and soldering the spacer and the first metal layer and a second portion by soldering one surface of a power semiconductor chip on a lower surface of a second metal layer of a second substrate having the second metal layer;

disposing the first portion and the second portion between upper and lower jigs so that an upper surface of the spacer and a lower surface of the power semiconductor chip face each other while soldering the upper surface of the spacer and the lower surface of the power semiconductor chip and adjusting a distance between the upper and lower jigs to correspond to a predetermined height of the power module; and

disposing a metal ball on the upper surface of the spacer, and applying a solder on the metal ball so that a minimum height of the solder is secured by the metal ball as much as a thickness of the metal ball while the solder is melting.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 25, 2023
From: KIA MOTORS CORPORATION
To: KIA CORPORATION
Reel/Frame 064379/0733 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 25, 2023
From: KIM, TAE HWA; YOU, MYUNG ILL
To: HYUNDAI MOTOR COMPANY; KIA MOTORS CORPORATION
Reel/Frame 064382/0633 →
Priority Claims (1)
KR 10-2020-0047552 · Apr 20, 2020 · national
Continuity (2)
Division 17035430 · Sep 28, 2020
Related Publication 20230369275A1 · Nov 16, 2023
References Cited (30)
US 7262444B2 · Fillion et al. · 2007 [cited by applicant]
US 7632718B2 · Hosseini · 2009 [cited by applicant]
US 8063440B2 · Yankoski et al. · 2011 [cited by applicant]
US 8497166B2 · Umemura · 2013 [cited by applicant]
US 8520389B2 · Rozman et al. · 2013 [cited by applicant]
US 8654541B2 · Robert et al. · 2014 [cited by applicant]
US 9041183B2 · Liang et al. · 2015 [cited by applicant]
US 9136193B2 · Minamio et al. · 2015 [cited by applicant]
US 9731370B2 · Uhlemann et al. · 2017 [cited by applicant]
US 9922911B1 · Park · 2018 [cited by examiner]
US 10727173B2 · Park et al. · 2020 [cited by applicant]
US 11251112B2 · Cho · 2022 [cited by examiner]
US 20070018338A1 · Hossein et al. · 2007 [cited by applicant]
US 20070152350A1 · Kim · 2007 [cited by examiner]
US 20140151874A1 · Obu · 2014 [cited by examiner]
US 20160126157A1 · Jeon · 2016 [cited by examiner]
US 20160343641A1 · Hori · 2016 [cited by examiner]
US 20170133308A1 · Inaba · 2017 [cited by examiner]
US 20180013052A1 · Oliver · 2018 [cited by examiner]
US 20180047697A1 · Lüdeke et al. · 2018 [cited by applicant]
US 20180082920A1 · Hiyoshi · 2018 [cited by examiner]
US 20180082925A1 · Grassmann et al. · 2018 [cited by applicant]
US 20190304866A1 · Kitabayashi · 2019 [cited by examiner]
US 20190341332A1 · Lin · 2019 [cited by examiner]
US 20190363029A1 · Guillon et al. · 2019 [cited by applicant]
DE 112017002961T5 · 2019 [cited by examiner]
KR 20170069363A · 2017 [cited by applicant]
KR 20170092750A · 2017 [cited by applicant]
KR 1020180031502 · 2018 [cited by applicant]
KR 20180052143A · 2018 [cited by applicant]