Critical dimension uniformity
View Patent ↗A method includes receiving a pattern layout for a mask, shrinking the pattern layout to form a shrunk pattern, determining centerlines for each of a plurality of features within the shrunk pattern, and snapping the centerline for each of the plurality of features to a grid. The grid represents a minimum resolution size of a mask fabrication tool. The method further includes, after snapping the centerline for each of the plurality of features to the grid, fabricating the mask with the shrunk pattern.
1. A method comprising:
shrinking a mask pattern to form a shrunk pattern;
identifying a centerline for a first feature of the shrunk pattern;
snapping the centerline of the first feature to a grid; and
after the snapping of the centerline of the first feature to the grid, adjusting a critical dimension of the first feature.
2. The method of claim 1 , wherein the grid represents a minimum resolution size of a mask fabrication tool.
3. The method of claim 2 , wherein adjusting the critical dimension of the first feature includes adjusting the critical dimension of the first feature to be an integer multiple of the minimum resolution size of the mask fabrication tool.
4. The method of claim 1 , wherein the centerline extends substantially perpendicular with respect to the critical dimension of the feature.
5. The method of claim 1 , wherein the snapping of the centerline of the first feature to the grid includes adjusting the first feature in a direction substantially perpendicular to the centerline.
6. The method of claim 1 , further comprising performing an optical proximity correction on the mask pattern, and
wherein the snapping of the centerline of the first feature to the grid occurs during a fracture process.
7. The method of claim 1 , wherein the adjusting of the critical dimension of the first feature includes expanding the size of the first feature.
8. A method comprising:
shrinking a mask pattern to form a shrunk pattern;
identifying a centerline for a first feature of the shrunk pattern;
snapping the centerline of the first feature to a grid; and
after the snapping of the centerline of the first feature to the grid, adjusting a critical dimension of the first feature,
wherein the grid represents a minimum resolution size of a mask fabrication tool.
9. The method of claim 8 , wherein the snapping of the centerline of the first feature to the grid comprises aligning the centerline of the first feature to the grid.
10. The method of claim 8 ,
wherein the first feature is elongated along a first direction, wherein the centerline extends lengthwise along the first direction.
11. The method of claim 10 , wherein the snapping of the centerline of the first feature to the grid comprises moving the centerline along a second direction perpendicular to the first direction.
12. The method of claim 10 , wherein the critical dimension of the first feature extends along the second direction.
13. The method of claim 10 , wherein the adjusting of the critical dimension of the first feature comprises aligning outside edges of the first feature with the grid.
14. The method of claim 8 , wherein the mask fabrication tool comprises an e-beam lithography tool.
15. The method of claim 8 , wherein the shrinking of the mask pattern comprises a shrinking percentage between about 95% and about 99%.
16. A method comprising:
shrinking a mask pattern to form a shrunk pattern;
identifying a centerline for a first feature of the shrunk pattern;
snapping the centerline of the first feature to a grid; and
after the snapping of the centerline of the first feature to the grid, adjusting a critical dimension of the first feature,
wherein the snapping of the centerline of the first feature to the grid comprises aligning the centerline of the first feature to the grid.
17. The method of claim 16 , wherein the grid represents a minimum resolution size of a mask fabrication tool.
18. The method of claim 16 , wherein the critical dimension of the first feature extends along the second direction.
19. The method of claim 16 , wherein the adjusting of the critical dimension of the first feature comprises aligning outside edges of the first feature with the grid.
20. The method of claim 16 , wherein the mask fabrication tool comprises an e-beam lithography tool.