Semiconductor device and method of manufacture
A semiconductor device and method of manufacture are provided. In embodiments a first liner is deposited to line a recess between a first semiconductor fin and a second semiconductor fin, the first liner comprising a first material. The first liner is annealed to transform the first material to a second material. A second liner is deposited to line the recess, the second liner comprising a third material. The second liner is annealed to transform the third material to a fourth material.
1. A semiconductor device comprising:
a first liner extending between a first semiconductor fin and a second semiconductor fin over a semiconductor substrate;
a second liner in physical contact with the first liner;
a third liner in physical contact with the second liner, the third liner comprising nitrogen at a percentage of less than about 10%;
a fourth liner in physical contact with the third liner;
a capping layer in physical contact with the fourth liner, the capping layer comprising carbon at a percentage of less than about 10%;
a dielectric cap in physical contact with the capping layer, wherein the first semiconductor fin extends further away from the semiconductor substrate than the dielectric cap; and
a dielectric fin embedded within the dielectric cap and extending further away from the semiconductor substrate than the dielectric cap.
2. The semiconductor device of claim 1 , wherein the first liner is silicon.
3. The semiconductor device of claim 1 , wherein the first liner has a density of between about 2 g/cm 3 and about 4 g/cm 3 .
4. The semiconductor device of claim 3 , wherein the first liner has a thickness of less than about 20 Å.
5. The semiconductor device of claim 1 , wherein the second liner is silicon dioxide.
6. The semiconductor device of claim 5 , wherein the second liner has a density of between about 2 g/cm 3 and about 2.6 g/cm 3 .
7. The semiconductor device of claim 6 , wherein the second liner has a thickness of between about 10 Å and about 50 Å.
8. A semiconductor device comprising:
a first semiconductor fin and a second semiconductor fin over a semiconductor substrate;
a first liner adjacent to both the first semiconductor fin and the second semiconductor fin;
a second liner over the first liner;
a third liner over the second liner, the third liner comprising nitrogen at a percentage of less than about 10%;
a fourth liner over the third liner;
a capping layer over the fourth liner, the capping layer comprising carbon at a percentage of less than about 10%; and
a dielectric cap over the capping layer, wherein the first semiconductor fin extends further away from the semiconductor substrate than the dielectric cap.
9. The semiconductor device of claim 8 , wherein the first liner is silicon dioxide.
10. The semiconductor device of claim 8 , wherein the fourth liner is silicon dioxide.
11. The semiconductor device of claim 10 , wherein the fourth liner has a thickness of between about 10 Å and about 50 Å.
12. The semiconductor device of claim 11 , wherein the fourth liner has a density of between about 1.2 g/cm 3 and about 2.5 g/cm 3 .
13. The semiconductor device of claim 8 , wherein the capping layer is silicon oxycarbonitride.
14. The semiconductor device of claim 8 , wherein the capping layer is ammonia doped silicon carbon nitride.
15. A semiconductor device comprising:
a first semiconductor fin and a second semiconductor fin over a semiconductor substrate;
at least four liners between the first semiconductor fin and the second semiconductor fin, wherein a first one of the at least four liners comprises nitrogen at a percentage of less than about 10% and wherein a second one of the at least four liners comprises nitrogen at a percentage of less than about 10%, the first one and the second one of the at least four liners being separated by a third one of the at least four liners;
a capping layer over the at least four liners, the capping layer comprising carbon at a percentage of less than about 10%; and
a dielectric cap over the capping layer, wherein the first semiconductor fin extends further away from the semiconductor substrate than the dielectric cap.
16. The semiconductor device of claim 15 , wherein a first one of at least four liners is silicon nitride.
17. The semiconductor device of claim 15 , wherein the capping layer has a thickness of between about 10 Å and about 70 Å.
18. The semiconductor device of claim 15 , wherein the capping layer has a density of between about 2 g/cm 3 and about 2.6 g/cm 3 .
19. The semiconductor device of claim 15 , wherein the dielectric cap has a thickness of between about 10 Å and about 50 Å.
20. The semiconductor device of claim 15 , wherein the dielectric cap has a density of between about 2 g/cm 3 and about 2.6 g/cm 3 .