Methods for growing doped cesium lead halides
Methods and devices for detecting incident radiation are provided. The methods and devices use high quality single-crystals of photoactive semiconductor compounds in combination with metal anodes and metal cathodes that provide for enhanced photodetector performance.
1. A method of growing a doped CsPbX 3 single crystal, the method comprising:
forming a melt comprising CsX, PbX 2 , where X is Br or Cl, and a doping species comprising a dopant element from Group 13 or Group 17 of the periodic table; and
growing crystalline doped CsPbX 3 from the melt via vertical Bridgman growth.
2. The method of claim 1 , wherein X is Br.
3. The method of claim 2 , wherein the dopant species comprises PbI 2 or PbCl 2 .
4. The method of claim 2 , wherein the dopant species comprises TlBr.
5. The method of claim 2 , wherein the dopant species comprises Pb.
6. The method of claim 1 , wherein X is Cl.
7. The method of claim 6 , wherein the dopant species comprises PbBr 2 .
8. A method of growing a doped CsPbX 3 single crystal, the method comprising:
forming a melt comprising CsX, PbX 2 , where X is Br or Cl, and a doping species comprising Se; and
growing crystalline doped CsPbX 3 from the melt via vertical Bridgman growth.
9. A method of growing a doped CsPbX 3 single crystal, the method comprising:
forming a melt comprising CsX, PbX 2 , where X is Br or Cl, and a doping species comprising CsSnBr 3 ; and
growing crystalline doped CsPbX 3 from the melt via vertical Bridgman growth.