IP Library › Granted Patent US 12,266,957
Granted Patent B2
US 12,266,957 · App. 17/431,302 · Granted Apr 1, 2025

Protection circuit for secondary battery and abnormality detection system of secondary battery

Inventors: Toshiyuki Isa (Kanagawa, JP); Takayuki Ikeda (Kanagawa, JP); Kei Takahashi (Kanagawa, JP); Ryota Tajima (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H02J7/0031G01R31/367H01L27/0266H01M10/48G01R31/382
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Quick Facts
Patent No.
US 12,266,957
App. No.
17/431,302
Granted
Apr 1, 2025
Kind
B2
Abstract

The safety is ensured in such a manner that an abnormality of a secondary battery is detected, for example, a phenomenon that lowers the safety of the secondary battery is detected early and a warning is given to a user. A first protection circuit and a second protection circuit are provided for one secondary battery. The first protection circuit includes a memory circuit including a transistor including an oxide semiconductor. Combination of a plurality of protection circuits enables a complementary double protection system in charging, and the safety can be further enhanced.

Claims (26)

1. An abnormality detection system comprising:

a secondary battery;

a first module electrically connected to the secondary battery;

a detection unit electrically connected to the first module;

a first disconnecting switch electrically connected to the first module;

a second module electrically connected to the secondary battery;

a second disconnecting switch electrically connected to the second module; and

a neural network portion configured to estimate at least one of deterioration state of the secondary battery and charge state of the secondary battery,

wherein the abnormality detection system is configured to turn off the first disconnecting switch when the first module detects an abnormality,

wherein the abnormality detection system is configured to turn off the second disconnecting switch when the second module detects an abnormality,

wherein the first module includes a transistor comprising an oxide semiconductor,

wherein the first module is configured to detect the abnormality by comparing estimated value and measurement value,

wherein the estimated value is calculated by electric circuit model using plurality of parameters, and

wherein the measurement value is measured by the detection unit.

2. The abnormality detection system according to claim 1 ,

wherein the first module further includes CPU.

3. The abnormality detection system according to claim 1 ,

wherein the neural network portion is electrically connected to the first module.

4. The abnormality detection system according to claim 1 ,

wherein the neural network portion is connected to the first module by using wireless communication.

5. The abnormality detection system according to claim 1 ,

wherein the neural network portion is configured to estimate the deterioration state of the secondary battery, and

wherein the plurality of parameters used in the electric circuit model is reset on the basis of the estimated deterioration state of the secondary battery.

6. The abnormality detection system according to claim 1 ,

wherein the neural network portion is configured to estimate the charge state of the secondary battery, and

wherein the estimating the charge state of the secondary battery is calculated by using a Kalman filter.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 16, 2021
From: ISA, TOSHIYUKI; IKEDA, TAKAYUKI; TAKAHASHI, KEI; TAJIMA, RYOTA
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 057190/0542 →
Priority Claims (2)
JP 2019-031868 · Feb 25, 2019 · national
JP 2019-070562 · Apr 2, 2019 · national
Continuity (1)
Related Publication 20220131392A1 · Apr 28, 2022
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