Image sensors with light channeling reflective layers therein
An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.
1. An image sensor, comprising:
a substrate including a first surface and a second surface opposite to the first surface
a first unit pixel including a first photoelectric conversion device (PD), a second PDs, and a first microlens on the first and second PDs;
a second unit pixel including a third PD, a fourth PD, and a second microlens on the third and fourth PDs;
an isolation trench between the first unit pixel and the second unit pixel, wherein the isolation trench is configured to connect to the second surface of the substrate and has a first surface,
an isolation layer between the first PD and the second PD, wherein the isolation layer has a first surface; and
wherein the isolation trench extends in a first direction in a plan view,
wherein the isolation trench includes a first material and the isolation layer includes a second material different from the first material,
wherein the first microlens is on the second surface of the substrate,
wherein a distance from the first surface of the substrate to the first surface of the isolation trench in a second direction is different from a distance from the first surface of the substrate to the first surface of the isolation layer in the second direction,
wherein the second direction is perpendicular to the first direction,
wherein the isolation trench includes a metal material containing layer and a silicon oxide layer, and
wherein the silicon oxide layer covers sidewalls and the first surface of the isolation trench.
2. The image sensor of claim 1 , wherein the isolation trench is spaced apart from the first surface of the substrate.
3. The image sensor of claim 2 , wherein the isolation layer is spaced apart from the first surface of the substrate.
4. The image sensor of claim 2 , wherein the isolation trench further includes an air gap.
5. The image sensor of claim 4 , wherein the metal material is aluminum.
6. The image sensor of claim 5 , wherein the air gap extends in the second direction.
7. The image sensor of claim 5 , wherein a width of the first surface of the isolation trench is different from a width of the first surface of the isolation layer.
8. The image sensor of claim 7 , wherein a number of layers in the isolation trench is higher than a number of layers in the isolation layer.
9. The image sensor of claim 8 , further comprising:
a red color filter on the first and second PDs; and
a green color filter on the third and fourth PDs.
10. The image sensor of claim 9 , wherein the isolation layer is configured to extend in the first direction in the plan view.
11. An image sensor, comprising:
a substrate including a first surface and a second surface opposite to the first surface
a first unit pixel including a first photoelectric conversion device (PD), a second PD, a red color filter on the first and second PDs, and a first microlens on the first and second PDs;
a second unit pixel including a third PD, a fourth PD, a first green color filter on the third and fourth PDs, and a second microlens on the third and fourth PDs;
a third unit pixel including a fifth PD, a sixth PD, a blue color filter on the fifth and sixth PDs, and a third microlens on the fifth PD and sixth PDs;
a fourth unit pixel including seventh PD, an eighth PD, a second green color filter on the seventh and eighth PDs, and a fourth microlens on the seventh and eighth PDs;
an isolation trench between the first unit pixel and the forth unit pixel, wherein the isolation trench is configured to connect to the second surface of the substrate and has a first surface; and
an isolation layer between the first PD and the second PD, wherein the isolation layer has a first surface;
wherein the first to fourth unit pixels are arranged in a clockwise direction,
wherein the isolation trench extends in a first direction in a plan view,
wherein the isolation trench includes a first material and the isolation layer includes a second material different from the first material,
wherein the first microlens is on the second surface of the substrate,
wherein a distance from the first surface of the substrate to the first surface of the isolation trench in a second direction is different from a distance from the first surface of the substrate to the first surface of the isolation layer in the second direction,
wherein the second direction is perpendicular to the first direction,
wherein the isolation trench includes a metal material containing layer and a silicon oxide layer, and
wherein the silicon oxide layer covers sidewalls and the first surface of the isolation trench.
12. The image sensor of claim 11 , wherein the isolation trench is spaced apart from the first surface of the substrate.
13. The image sensor of claim 12 , wherein the isolation layer is spaced apart from the first surface of the substrate.
14. The image sensor of claim 12 , wherein the isolation trench further includes an air gap.
15. The image sensor of claim 14 , wherein the metal material is aluminum.
16. The image sensor of claim 15 , wherein the metal material layer in the isolation trench is in contact with the second surface of the substrate.
17. The image sensor of claim 16 , wherein the silicon oxide layer in the isolation trench is in contact with the second surface of the substrate.
18. The image sensor of claim 17 , wherein the isolation layer is in contact with the isolation trench in a third direction perpendicular to the first direction in the plan view.
19. The image sensor of claim 17 , wherein a width of the first surface of the isolation trench is different from a width of the first surface of the isolation layer.