Stacked FETS with non-shared work function metals
A semiconductor structure is provided that includes a first FET device stacked over a second FET device, wherein the first FET device contains a first functional gate structure containing a first work function metal and the second FET device contains a second functional gate structure containing a second work function metal. In the structure, the first work function metal is absent from an area including the second work function metal, and vice versa. Thus, no shared work functional metal is present in the semiconductor structure.
1. A semiconductor structure comprising:
a first field effect transistor (FET) device stacked over a second FET device, wherein the first FET device comprises a first functional gate structure containing a first work function metal and the second FET device comprises a second functional gate structure containing a second work function metal;
a stacked device separating dielectric material layer located between the first FET device and the second FET device;
a first gate cut dielectric structure located laterally adjacent to the first FET device; and
a second gate cut dielectric structure located laterally adjacent to the second FET device, wherein a portion of the first gate cut dielectric structure passes through an opening in the stacked device separating dielectric material layer and is present laterally adjacent to the second FET device, and wherein the portion of the first gate cut dielectric structure that passes through the opening has an enlarged width as compared to a width of a portion of the first gate cut dielectric structure that does not pass through the opening.
2. The semiconductor structure of claim 1 , wherein the enlarged width prevents the first work function metal from being present in the second FET device and the second work function metal from being present in the first FET device.
3. The semiconductor structure of claim 1 , wherein the portion of the first gate cut dielectric structure that passes through the opening directly contacts a surface of the second gate cut dielectric structure.
4. The semiconductor structure of claim 1 , wherein the first FET device comprises at least one semiconductor nanosheet, and the second FET device comprises at least one semiconductor fin.
5. The semiconductor structure of claim 1 , wherein the first FET device comprises at least one semiconductor nanosheet, and the second FET device comprises at least one semiconductor nanosheet.
6. The semiconductor structure of claim 1 , further comprising another first FET device located laterally adjacent to the first FET device and separated by the first gate cut dielectric structure, wherein the another first FET device comprises a third functional gate structure having a third work function metal.
7. The semiconductor structure of claim 6 , further comprising another second FET device located laterally adjacent to the second FET device and separated by the second gate cut dielectric structure and the portion of the first gate cut dielectric structure that passes through the opening, wherein the another second FET device comprises a fourth functional gate structure having a fourth work function metal.
8. The semiconductor structure of claim 1 , wherein the first gate cut dielectric structure contacts a first surface of a first conductive contact containing interlayer dielectric (ILD) material layer, wherein the first conductive contact containing ILD material layer contains a first source/drain contact structure contacting a source/drain region of the first FET device.
9. The semiconductor structure of claim 8 , further comprising a backside power delivery network located on a second surface of the first conductive contact containing ILD material layer that is opposite the first surface of the conductive contact containing ILD material layer.
10. The semiconductor structure of claim 1 , wherein the second gate cut dielectric structure contacts a first surface of a second conductive contact containing ILD material layer, wherein the second conductive contact containing ILD material layer contains a second source/drain contact structure contacting a source/drain region of the second FET device, a second gate contact structure contacting the second functional gate structure, a shared gate contact structure contacting both the first functional gate structure and the second functional gate structure, and a second gate contact structure contacting the first functional gate structure, but not the second functional gate structure.
11. The semiconductor structure of claim 10 , further comprising a back-end-of-the-line structure located on a second surface of the second conductive contact containing ILD material layer that is opposite the first surface of the second conductive contact containing ILD material layer.
12. The semiconductor structure of claim 1 , wherein the first functional gate structure and the second functional gate structure further include a high-k gate dielectric material layer, wherein the high-k gate dielectric material layer contacts surfaces of the stacked device separating dielectric material layer.
13. The semiconductor structure of claim 1 , wherein the stacked device separating dielectric material layer is located laterally adjacent to a dielectric isolation layer that is located between the first FET device and the second FET device.
14. The semiconductor structure of claim 13 , wherein the dielectric isolation layer is spaced apart from the spacer dielectric material by a sacrificial dielectric liner portion.
15. The semiconductor structure of claim 14 , wherein another dielectric isolation layer is positioned above the first FET device.
16. The semiconductor structure of claim 15 , further comprising a high-k gate dielectric material located on surfaces of the dielectric isolation layer and the another dielectric layer.
17. The semiconductor structure of claim 13 , wherein the first FET device further comprises a first source/drain region that is spaced apart from a second source/drain region of the second FET device by an inner spacer dielectric material and a dielectric material structure.
18. The semiconductor structure of claim 12 , wherein the first FET device is a first nanosheet FET device and the second FET device is a second nanosheet device.
19. The semiconductor structure of claim 12 , further comprising another first FET device located laterally adjacent to the first FET device and separated by the first gate cut dielectric structure, wherein the another first FET device comprises a third functional gate structure having a third work function metal.
20. The semiconductor structure of claim 19 , further comprising another second FET device located laterally adjacent to the second FET device and separated by the second gate cut dielectric structure and the portion of the first gate cut dielectric structure that passes through the opening, wherein the another second FET device comprises a fourth functional gate structure having a fourth work function metal.
21. The semiconductor structure of claim 12 , wherein the first gate cut dielectric structure contacts a first surface of a first conductive contact containing interlayer dielectric (ILD) material layer, wherein the first conductive contact containing ILD material layer contains a first source/drain contact structure contacting a source/drain region of the first FET device.
22. The semiconductor structure of claim 21 , further comprising a backside power delivery network located on a second surface of the first conductive contact containing ILD material layer that is opposite the first surface of the conductive contact containing ILD material layer.
23. The semiconductor structure of claim 12 , wherein the second gate cut dielectric structure contacts a first surface of a second conductive contact containing ILD material layer, wherein the second conductive contact containing ILD material layer contains a second source/drain contact structure contacting a source/drain region of the second FET device, a second gate contact structure contacting the second functional gate structure, a shared gate contact structure contacting both the first functional gate structure and the second functional gate structure, and a second gate contact structure contacting the first functional gate structure, but not the second functional gate structure.
24. The semiconductor structure of claim 23 , further comprising a back-end-of-the-line structure located on a second surface of the second conductive contact containing ILD material layer that is opposite the first surface of the second conductive contact containing ILD material layer.