Control of plasma formation by RF coupling structures
An apparatus for forming a plasma may include one or more coupling ports to accept a radiofrequency (RF) current. The apparatus may additionally include one or more coupling structures which may include one or more conductive loops to permit the RF current to conduct from at least a first portion of the one or more coupling ports to at least a second port of the one or more coupling ports. The one or more conductive loops may each be configured to exhibit a first value of inductance in the absence of the plasma and to exhibit a second value of inductance in the presence of the plasma. The one or more coupling structures may each include a reactive element, in which each reactive element is coupled to a corresponding one of the one or more conductive loops so as to form a corresponding number of coupling structures. Each RF coupling structure may have a resonant frequency that increases in response to the presence of the plasma.
1. An apparatus for forming a plasma, comprising:
one or more coupling ports configured to accept a radiofrequency (RF) current;
one or more conductive loops configured to permit the RF current to conduct from at least a first port of the one or more coupling ports to at least a second port of the one or more coupling ports, the one or more conductive loops each configured to exhibit a first value of inductance in an absence of the plasma and to exhibit a second value of inductance in a presence of the plasma; and
one or more reactive elements, each coupled to a corresponding one of the one or more conductive loops, to form a corresponding number of coupling structures, each coupling structure having a resonant frequency configured to increase in response to the presence of the plasma, the plasma at least partially surrounding the one or more conductive loops.
2. The apparatus of claim 1 , wherein the one or more conductive loops are configured to form a plasma operating in an inductive mode.
3. The apparatus of claim 1 , wherein the one or more conductive loops comprises two or more conductive loops.
4. The apparatus of claim 1 , wherein each of the one or more reactive elements comprises one or more capacitive elements that cooperate with a corresponding conductive loop of the one or more conductive loops to cause resonance at a frequency that is lower than the frequency of the RF current.
5. The apparatus of claim 4 , wherein the resonant frequency is a value that is within 10% of the frequency of the RF current.
6. The apparatus of claim 4 , wherein the forming of the plasma causes a second value of inductance that is less than the first value of inductance.
7. The apparatus of claim 1 , wherein a coupling factor between the one or more conductive loops and the formed plasma comprises a value of between 0.35 and about 0.5.
8. The apparatus of claim 7 , wherein at least a portion of the formed plasma is located in a region between segments of each of the one or more conductive loops.
9. The apparatus of claim 7 , wherein at least a portion of the formed plasma is located in a region less than twice a separation distance between adjacent segments of each of the one or more conductive loops.
10. The apparatus of claim 1 , wherein at least one of the one or more conductive loops comprises a hairpin shape.
11. The apparatus of claim 1 , further comprising a delay network configured to maintain current conduction within the one or more conductive loops at a value that is at least twice the value of the RF current conducted to the first port of the one or more coupling ports.
12. The apparatus of claim 11 , wherein the delay network is further configured to introduce a delay of one-half wavelength between an output port of an RF matching network and the first port of the one or more coupling ports.
13. An apparatus, comprising:
one or more input ports to receive an RF current having an RF current frequency;
one or more conductive loops coupled to a corresponding one of the one or more input ports, each of the one or more conductive loops configured to exhibit inductance; and
one or more capacitive elements, each of the one or more capacitive elements coupled to a corresponding one of the one or more conductive loops so as to resonate at a first frequency that is below the RF current frequency,
the one or more conductive loops configured to convert a gas, at least partially surrounding the one or more conductive loops, to a plasma in response to conduction of the RF current.
14. The apparatus of claim 13 , wherein the first frequency differs from the RF current frequency by less than 10%.
15. The apparatus of claim 13 , wherein the gas at least partially surrounds the one or more conductive loops.
16. The apparatus of claim 13 , wherein the gas is located within a distance of two times a spacing between adjacent segments of the one or more conductive loops.
17. The apparatus of claim 13 , wherein the one or more conductive loops are configured to resonate at a frequency below about 13.56 MHz.
18. The apparatus of claim 13 , wherein at least one of the one or more conductive loops comprises a hairpin shape.
19. The apparatus of claim 13 , further comprising a time-delay network configured to maintain peak current conduction within the one or more conductive loops at a value that is at least twice the value of the RF current conducted a first input port of the one or more input ports.
20. A multi-station integrated circuit fabrication chamber, comprising:
a matching network to receive an RF current from an output port of an RF current generator;
one or more coupling structures to receive a current from the matching network, the one or more coupling structures having at least one conductive loop and at least one capacitive element, the one or more coupling structures configured to resonate at a resonant frequency that is less than the frequency of the RF current; and
a volume configured to permit conversion of one or more gases into a plasma at least partially surrounding the one or more coupling structures to conduct one or more fabrication operations within the multi-station integrated circuit fabrication chamber.
21. The multi-station integrated circuit fabrication chamber of claim 20 , further comprising a time-delay network configured to maintain peak current conduction within the one or more conductive loops at a value that is at least twice a value of the RF current received from the matching network.
22. The multi-station integrated circuit fabrication chamber of claim 20 , further comprising a time-delay network configured to introduce a delay of one-half wavelength between an output port of the matching network and input ports of the one or more coupling structures.
23. The multi-station integrated circuit fabrication chamber of claim 20 , wherein the one or more gases at least partially surround the one or more conductive loops.
24. The multi-station integrated circuit fabrication chamber of claim 20 , wherein at least a portion of the one or more gases are located within a distance of two times a spacing between adjacent segments of the one or more conductive loops.
25. The multi-station integrated circuit fabrication chamber of claim 20 , wherein a coupling factor between the one or more conductive loops and the plasma comprises a value of between about 0.2 and about 0.5.
26. The multi-station integrated circuit fabrication chamber of claim 20 , wherein a first frequency of the RF current and the resonant frequency differ by less than 10%.
27. The multi-station integrated circuit fabrication chamber of claim 20 , wherein the one or more coupling structures comprises three or more coupling structures.
28. A system for forming a plasma, comprising:
a radiofrequency (RF) current generator; and
a first RF coupling structure configured to receive power generated by the RF current generator and to convert a gaseous material, at least partially surrounding the first RF coupling structure, to an ionized plasma, the first RF coupling structure configured to exhibit an impedance that decreases responsive to an increased density of the ionized plasma, the RF current generator configured to decrease output current delivered to the first RF coupling structure responsive to the decreased impedance.
29. The system of claim 28 , further comprising:
a second RF coupling structure, the second RF coupling structure configured to receive a current conducted from the RF current generator and to convert a gaseous material, at least partially surrounding the second RF coupling structure, to an ionized plasma; and
an RF power divider having an input port coupled to an output port of the RF current generator and having a first output port coupled to the first RF coupling structure and a second output port coupled to the second RF coupling structure, the second RF coupling structure configured to exhibit an impedance that decreases responsive to an increased density of the ionized plasma.
30. The system of claim 29 , wherein power delivered to the first RF coupling structure by the RF power divider and the power delivered to the second RF coupling structure by the RF power divider are configured to be approximately equal during the increased density of the ionized plasma converted by the first RF coupling structure and during the increased density of the ionized plasma converted by the second RF coupling structure.
31. The system of claim 29 , wherein the first RF coupling structure and the second RF coupling structure comprise a conductive loop configured to form the ionized plasma in an H mode.