Semiconductor device and manufacturing method thereof
In a method of manufacturing a semiconductor device, a source/drain structure is formed over a substrate, a first interlayer dielectric (ILD) layer including one or more dielectric layers is formed over the source/drain structure, a first opening is formed in the first ILD layer to at least partially expose the source/drain structure, a sacrificial layer is formed on an inner wall of the first opening, a first insulating layer is formed on the sacrificial layer, a conductive layer is formed on the first insulating layer so as to form a source/drain contact in contact with the source/drain structure, the sacrificial layer is removed to form a space between the first insulating layer and the first ILD layer, and a second insulating layer is formed over the source/drain contact and the first ILD layer to cap an upper opening the space, thereby forming an air gap.
1. A semiconductor device comprising:
a gate structure including a gate electrode disposed over a channel region;
a plurality of dielectric layers disposed over the channel region;
a gate contact passing through the plurality of dielectric layers and contacting the gate electrode;
a liner insulating layer disposed on a side wall of the gate contact; and
an air gap disposed between the liner insulating layer and the plurality of dielectric layers,
wherein a piece of polycrystalline or amorphous Si is disposed at a bottom of the air gap.
2. The semiconductor device of claim 1 , wherein the liner insulating layer is made of silicon nitride.
3. The semiconductor device of claim 1 , further comprising a cap insulating layer disposed on an uppermost layer of the plurality of dielectric layers to cap the air gap,
wherein a bottom of the cap insulating layer is located below a top of the gate contact.
4. The semiconductor device of claim 1 , wherein the air gap passes through two or more dielectric layers of the plurality of dielectric layers.
5. The semiconductor device of claim 1 , wherein:
the gate structure includes gate sidewall spacers disposed on opposing side faces of the gate electrode, and
the air gap contact one of the gate sidewall spacers.
6. The semiconductor device of claim 1 , wherein the gate contact includes a conductive liner layer and a body metal layer disposed over the conductive liner layer.
7. The semiconductor device of claim 1 , wherein a height of the piece of polycrystalline or amorphous Si is 1-5% of a height of the air gap.
8. A semiconductor device comprising:
a gate structure including a gate electrode;
a source/drain structure including a source/drain epitaxial layer;
a plurality of dielectric layers disposed over the source/drain epitaxial layer;
a source/drain contact passing through one or more of the plurality of dielectric layers and contacting the source/drain epitaxial layer;
a first liner insulating layer disposed on a side wall of the source/drain contact;
a first air gap disposed between the first liner insulating layer and the plurality of dielectric layers;
a gate contact passing through one or more of the plurality of dielectric layers and contacting the gate electrode;
a second liner insulating layer disposed on a side wall of the gate contact; and
a second air gap disposed between the second liner insulating layer and the plurality of dielectric layers,
wherein a piece of polycrystalline or amorphous Si is disposed at a bottom of the first air gap.
9. The semiconductor device of claim 8 , wherein the first liner insulating layer is disposed on a side wall of the source/drain contact.
10. The semiconductor device of claim 8 , wherein each of the first liner insulating layer and the second liner insulating layer includes at least one of silicon nitride, SiON and SiOCN.
11. The semiconductor device of claim 8 , wherein:
the plurality of dielectric layers includes a first insulating layer disposed over the source/drain structure, a first interlayer dielectric (ILD) layer disposed over the first insulating layer, a second insulating layer disposed over the first ILD layer, a second ILD layer disposed over the second insulating layer, a third insulating layer disposed over the second ILD layer and a third ILD layer disposed over the third insulating layer.
12. The semiconductor device of claim 11 , wherein:
the third insulating layer caps the first air gap, and
a bottom of the third insulating layer is located below a top of the source/drain contact.
13. The semiconductor device of claim 12 , further comprising a fourth insulating layer disposed over the third ILD layer to cap the second air gap,
wherein a bottom of the fourth insulating layer is located below a top of the gate contact.
14. The semiconductor device of claim 13 , wherein each of the third insulating layer and the fourth insulating layer includes silicon nitride.
15. The semiconductor device of claim 8 , wherein a height of the piece of polycrystalline or amorphous Si is 1-5% of a height of the first air gap.
16. The semiconductor device of claim 8 , wherein another piece of polycrystalline or amorphous Si is disposed at a bottom of the second air gap.
17. A semiconductor device comprising:
a source/drain structure including a source/drain epitaxial layer;
a plurality of dielectric layers disposed over the source/drain epitaxial layer;
a lower contact disposed in one or more of the plurality of dielectric layers and contacting the source/drain epitaxial layer;
a first liner insulating layer disposed on a side wall of the lower contact;
a first air gap disposed between the first liner insulating layer and the plurality of dielectric layers;
an upper contact disposed in one or more of the plurality of dielectric layers and contacting the lower contact;
a second liner insulating layer disposed on a side wall of the upper contact; and
a second air gap disposed between the second liner insulating layer and the plurality of dielectric layers,
wherein a piece of polycrystalline or amorphous Si is disposed at a bottom of the first air gap.
18. The semiconductor device of claim 17 , further comprising a silicide layer disposed on the source/drain epitaxial layer,
wherein the silicide layer penetrates below the first liner insulating layer.
19. The semiconductor device of claim 17 , further comprising a silicide layer disposed on the source/drain epitaxial layer,
wherein the silicide layer penetrates below the first air gap.
20. The semiconductor device of claim 17 , wherein a height of the piece of polycrystalline or amorphous Si is 1-5% of a height of the first air gap.