Three-dimensional memory devices and methods for forming the same
In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure includes an array of memory cells. The second semiconductor structure includes a first peripheral circuit of the array of memory cells. The first peripheral circuit includes a first transistor. The first semiconductor structure or the second semiconductor structure further includes a second peripheral circuit of the array of memory cells. The second peripheral circuit includes a second transistor. The first peripheral circuit and the second peripheral circuit are stacked over one another.
1. A three-dimensional (3D) memory device, comprising:
a first semiconductor structure comprising:
an array of memory cells comprising an array of NAND memory strings, and
a first semiconductor layer, wherein sources of the array of NAND memory strings are in contact with a first side of the first semiconductor layer;
a second semiconductor structure comprising:
a first peripheral circuit of the array of memory cells, the first peripheral circuit comprising a first transistor, and
a second semiconductor layer in contact with the first transistor; and
a bonding interface between the first semiconductor structure and the second semiconductor structure,
wherein the first semiconductor structure or the second semiconductor structure further comprises a second peripheral circuit of the array of memory cells, the second peripheral circuit comprising a second transistor in contact with a second side of the first semiconductor layer opposite to the first side; and
the first peripheral circuit and the second peripheral circuit are stacked over one another.
2. The 3D memory device of claim 1 , wherein the first semiconductor layer comprises single crystalline silicon.
3. The 3D memory device of claim 1 , wherein the first semiconductor layer comprises polysilicon.
4. The 3D memory device of claim 1 , wherein the array of NAND memory strings is between the bonding interface and the first semiconductor layer.
5. The 3D memory device of claim 1 , wherein
the first transistor comprises a first gate dielectric;
the second transistor comprises a second gate dielectric; and
the first and second gate dielectrics have different thicknesses.
6. The 3D memory device of claim 5 , wherein a difference between the thicknesses of the first and second gate dielectrics is at least 5-fold.
7. The 3D memory device of claim 5 , wherein
at least one of the first semiconductor structure or the second semiconductor structure further comprises:
a third peripheral circuit of the array of memory cells, the third peripheral circuit comprising a third transistor comprising a third gate dielectric; and
a fourth peripheral circuit of the array of memory cells, the fourth peripheral circuit comprising a fourth transistor comprising a fourth gate dielectric;
the first and third peripheral circuits are coplanar;
the second and fourth peripheral circuits are coplanar; and
the third and fourth gate dielectrics have a same thickness.
8. The 3D memory device of claim 7 , wherein the thickness of the third and fourth gate dielectrics is between the thicknesses of the first and second gate dielectrics.
9. The 3D memory device of claim 7 , wherein the third and fourth peripheral circuits comprise at least one of a page buffer circuit or a logic circuit.
10. The 3D memory device of claim 1 , wherein
the second semiconductor structure further comprises a first interconnect layer comprising a first interconnect coupled to the first transistor;
the first semiconductor structure or the second semiconductor structure further comprises a second interconnect layer comprising a second interconnect coupled to the second transistor; and
the first and second interconnects have different materials.
11. The 3D memory device of claim 10 , wherein the materials of the first and second interconnects comprise copper and tungsten.
12. The 3D memory device of claim 1 , wherein the first peripheral circuit comprises an input/output (I/O) circuit, and the second peripheral circuit comprises a driving circuit, or vice versa.
13. The 3D memory device of claim 1 , further comprising:
a first voltage source coupled to the first peripheral circuit and configured to provide a first voltage to the first peripheral circuit; and
a second voltage source coupled to the second peripheral circuit and configured to provide a second voltage to the second peripheral circuit,
wherein the first voltage is different from the second voltage.
14. The 3D memory device of claim 1 , wherein
the first semiconductor structure further comprises a first bonding layer at the bonding interface and comprising a first bonding contact;
the second semiconductor structure further comprises a second bonding layer at the bonding interface and comprising a second bonding contact; and
the first bonding contact is in contact with the second bonding contact at the bonding interface.
15. The 3D memory device of claim 14 , wherein the first bonding contact and the second bonding contact comprise a same material.
16. A system, comprising:
a memory device configured to store data, and comprising:
a first semiconductor structure comprising:
an array of memory cells comprising an array of NAND memory strings, and
a first semiconductor layer, wherein sources of the array of NAND memory strings are in contact with a first side of the first semiconductor layer;
a second semiconductor structure comprising:
a first peripheral circuit of the array of memory cells, the first peripheral circuit comprising a first transistor, and
a second semiconductor layer in contact with the first transistor; and
a bonding interface between the first semiconductor structure and the second semiconductor structure,
wherein the first semiconductor structure or the second semiconductor structure further comprises a second peripheral circuit of the array of memory cells, the second peripheral circuit comprising a second transistor in contact with a second side of the first semiconductor layer opposite to the first side; and
the first peripheral circuit and the second peripheral circuit are stacked over one another; and
a memory controller coupled to the memory device and configured to control the array of memory cells through the first peripheral circuit and the second peripheral circuit.
17. A three-dimensional (3D) memory device, comprising:
a first semiconductor structure comprising:
an array of memory cells comprising an array of NAND memory strings, and
a first semiconductor layer, wherein sources of the array of NAND memory strings are in contact with a first side of the first semiconductor layer;
a second semiconductor structure comprising:
a first peripheral circuit of the array of memory cells, the first peripheral circuit comprising a first transistor, and
a second semiconductor layer, wherein the first transistor is in contact with a first side of the second semiconductor layer; and
a bonding interface between the first semiconductor structure and the second semiconductor structure,
wherein the first semiconductor structure or the second semiconductor structure further comprises a second peripheral circuit of the array of memory cells, the second peripheral circuit comprising a second transistor in contact with a second side of the second semiconductor layer opposite to the first side; and
the first peripheral circuit and the second peripheral circuit are stacked over one another.
18. The 3D memory device of claim 17 , wherein the array of NAND memory strings is between the bonding interface and the first semiconductor layer.
19. The 3D memory device of claim 17 , wherein
the first transistor comprises a first gate dielectric;
the second transistor comprises a second gate dielectric; and
the first and second gate dielectrics have different thicknesses.