Transistor gate structure and method of forming
View Patent ↗A device includes a first nanostructure; a second nanostructure over the first nanostructure; a high-k gate dielectric around the first nanostructure and the second nanostructure, the high-k gate dielectric having a first portion on a top surface of the first nanostructure and a second portion on a bottom surface of the second nanostructure; and a gate electrode over the high-k gate dielectric. The gate electrode comprises: a first work function metal around the first nanostructure and the second nanostructure, the first work function metal filling a region between the first portion of the high-k gate dielectric and the second portion of the high-k gate dielectric; and a tungsten layer over the first work function metal, the tungsten layer being free of fluorine.
1. A device comprising:
a first semiconductor structure;
a second semiconductor structure over the first semiconductor structure;
a high-k gate dielectric around the first semiconductor structure and the second semiconductor structure; and
a gate electrode over the high-k gate dielectric, wherein the gate electrode comprises:
a first work function metal around the first semiconductor structure and the second semiconductor structure, the first work function metal comprising an internal seam disposed between the first semiconductor structure and the second semiconductor structure, wherein a width of the internal seam in a first cross-sectional view is less than a width of the first semiconductor structure in the first cross-sectional view; and
a barrier material over the first work function metal, wherein the barrier material comprises tungsten.
2. The device of claim 1 , wherein the gate electrode further comprises a fill material over the barrier material, the fill material having a higher concentration of fluorine than the barrier material.
3. The device of claim 2 , wherein the fill material comprises tungsten.
4. The device of claim 2 , wherein the fill material has a higher concentration of fluorine than the first work function metal.
5. The device of claim 1 , wherein the first work function metal is a p-type work function metal.
6. The device of claim 1 , wherein the gate electrode further comprises an adhesion layer between the barrier material and the first work function metal.
7. The device of claim 1 further comprising a second work function metal between the first work function metal and the high-k gate dielectric, wherein the second work function metal has a same conductivity type as the first work function metal.
8. A transistor comprising:
a first nanostructure over a semiconductor substrate;
a second nanostructure over the first nanostructure;
a gate dielectric surrounding the first nanostructure and the second nanostructure, wherein a first portion of the gate dielectric on a bottom surface of the first nanostructure is spaced apart from a second portion of the gate dielectric on a top surface of the second nanostructure; and
a gate electrode over the gate dielectric, wherein the gate electrode comprises:
a work function metal around the first nanostructure and the second nanostructure, wherein the work function metal spans an entire distance from the first portion of the gate dielectric to the second portion of the gate dielectric;
a barrier metal over the work function metal, the barrier metal comprising tungsten; and
a fill metal over the barrier metal.
9. The transistor of claim 8 , wherein a thickness of the barrier metal is in a range of 15 Å to 90 Å.
10. The transistor of claim 8 , wherein the barrier metal has a lower concentration of fluorine than the fill metal.
11. The transistor of claim 8 , wherein the work function metal is a p-type work function metal, and wherein a first portion of the work function metal meets a second portion of the work function metal at a seam between the first nanostructure and the second nanostructure.
12. The transistor of claim 8 , wherein the fill metal comprises tungsten.
13. The transistor of claim 8 , wherein the work function metal comprises:
a first work function metal; and
a second work function metal on the first work function metal, wherein the first work function metal and the second work function metal are made of different materials, and wherein the first work function metal and the second work function metal have a same conductivity type.
14. A method comprising:
depositing a gate dielectric around a first nanostructure and a second nanostructure, the first nanostructure is disposed over the second nanostructure;
depositing a work function metal over the gate dielectric, wherein the work function metal completely fills a region extending from a first portion of the gate dielectric on a bottom surface of the first nanostructure to a second portion of the gate dielectric on a top surface of the second nanostructure;
depositing a barrier layer over the work function metal, wherein the barrier layer comprises tungsten; and
depositing a fill metal over the barrier layer.
15. The method of claim 14 , wherein depositing the barrier layer comprises a fluorine-free deposition process.
16. The method of claim 15 , wherein depositing the fill metal comprises flowing a fluorine-comprising precursor.
17. The method of claim 16 , wherein the barrier layer reduces fluorine diffusion into the work function metal while depositing the fill metal.
18. The method of claim 14 , wherein depositing the fill metal comprises:
performing a first deposition process to deposit a first portion of the fill metal; and
performing a second deposition process to deposit a second portion of the fill metal over the first portion of the fill metal, wherein the second deposition process is a different type of deposition process than the first deposition process.
19. The method of claim 18 , wherein the first deposition process is an atomic layer deposition (ALD) process, and wherein the second deposition process is a chemical vapor deposition (CVD) process.
20. The method of claim 14 , wherein depositing the barrier layer is performed at a temperature in a range of 250° C. to 450° C.