Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate
A glass substrate is reused. The mass productivity of a semiconductor device is increased. A glass substrate one surface of which includes a first material and a second material. The first material includes one or both of a metal and a metal oxide. The second material includes one or both of a resin and a decomposition product of a resin. A cleaning method of a glass substrate, which includes a step of preparing the glass substrate one surface of which includes a first material and a second material and a step of exposing the first material by removing at least part of the second material.
1. A method for manufacturing a display device, comprising:
a step of forming a stack and a metal oxide layer over a first formation substrate;
a step of irradiating the stack with laser light through the first formation substrate;
a step of separating the stack and the metal oxide layer; and
a step of attaching a first substrate including a flexible material to a surface of the stack where the metal oxide layer is separated,
wherein the stack comprises a layer comprising a transistor and a light-emitting device, and a resin layer between the layer and the first formation substrate, and
wherein a focus of the laser light is at an interface between the resin layer and the metal oxide layer or a vicinity thereof.
2. The method for manufacturing a display device according to claim 1 ,
wherein the stack comprises a second substrate, and
wherein the layer is between the first formation substrate and the second substrate.
3. The method for manufacturing a display device according to claim 2 , wherein the second substrate is attached onto the layer by a bonding layer.
4. The method for manufacturing a display device according to claim 2 , wherein the second substrate comprises a flexible material.
5. The method for manufacturing a display device according to claim 1 , wherein the separation is executed in a manner that a part of the resin layer remains over the first formation substrate.
6. The method for manufacturing a display device according to claim 1 , wherein a channel formation region of the transistor comprises polycrystalline silicon.
7. The method for manufacturing a display device according to claim 1 , wherein the transistor is between the first formation substrate and the light-emitting device.
8. A method for manufacturing a display device, comprising:
a step of forming a first stack over a second stack;
a step of performing laser irradiation through a first formation substrate;
a step of separating the first stack and the second stack; and
a step of attaching a first substrate to a first surface of the first stack, the first surface being a surface where the second stack is separated,
wherein the first stack comprises a first layer comprising a transistor and a light-emitting device, and a resin layer between the first layer and the second stack,
wherein the second stack comprises the first formation substrate and a second layer over the first formation substrate, and
wherein a focus of the laser light is the first surface of the first stack.
9. The method for manufacturing a display device according to claim 8 ,
wherein the first stack comprises a second substrate, and
wherein the first layer is between the first formation substrate and the second substrate.
10. The method for manufacturing a display device according to claim 9 , wherein the second substrate is attached onto the first layer by a bonding layer.
11. The method for manufacturing a display device according to claim 9 , wherein the second substrate comprises a flexible material.
12. The method for manufacturing a display device according to claim 8 , wherein the separation is executed in a manner that a part of the resin layer remains over the second stack.
13. The method for manufacturing a display device according to claim 8 , wherein a channel formation region of the transistor comprises polycrystalline silicon.
14. The method for manufacturing a display device according to claim 8 , wherein the transistor is between the first formation substrate and the light-emitting device.
15. A method for manufacturing a display device, comprising:
a step of forming a first stack over a second stack;
a step of performing laser irradiation through a first formation substrate;
a step of separating the first stack and the second stack; and
a step of attaching a first substrate including a flexible material to a first surface of the first stack, the first surface being a surface where the second stack is separated,
wherein the first stack comprises a first layer comprising a transistor and a light-emitting device, and a resin layer between the first layer and the second stack,
wherein the second stack comprises the first formation substrate and a second layer over the first formation substrate, and
wherein a focus of the laser light is the first surface of the first stack.
16. The method for manufacturing a display device according to claim 15 ,
wherein the first stack comprises a second substrate, and
wherein the first layer is between the first formation substrate and the second substrate.
17. The method for manufacturing a display device according to claim 16 , wherein the second substrate is attached onto the first layer by a bonding layer.
18. The method for manufacturing a display device according to claim 16 , wherein the second substrate comprises a flexible material.
19. The method for manufacturing a display device according to claim 15 , wherein a channel formation region of the transistor comprises polycrystalline silicon.
20. The method for manufacturing a display device according to claim 15 , wherein the transistor is between the first formation substrate and the light-emitting device.
21. The method for manufacturing a display device according to claim 8 , wherein the second layer is a metal oxide layer.