Gate induced drain leakage reduction in FinFETs
A method of forming a semiconductor device that includes forming an inner dielectric spacer and outer dielectric spacer combination structure on a sacrificial gate structure that is present on a fin structure, wherein the inner dielectric spacer and outer dielectric spacer combination structure separates source and drain regions from the sacrificial gate structure. The method further includes removing the inner sidewall dielectric spacer; and forming a channel epitaxial wrap around layer on the portion of the fin structure that is exposed by removing the inner sidewall dielectric spacer. The method further includes removing the sacrificial gate structure to provide a gate opening to a channel portion of the fin structure, wherein the gate opening exposes the channel epitaxial wrap around layer; and forming a functional gate structure within the gate opening.
1 . A semiconductor device comprising:
channel epitaxial wrap around layers present on each end of a channel region; and
a gate structure including a gate dielectric having end portions in direct contact with the channel epitaxial wrap around layer at said each end of the channel region, and a middle portion of the gate dielectric is in direct contact with a center portion of the channel region.
2 . The semiconductor device of claim 1 further comprising source and drain regions on opposing sides of the channel region.
3 . The semiconductor device of claim 2 further comprising spacers separating the gate structure from source and drain regions.
4 . The semiconductor device of claim 1 , wherein the channel epitaxial wrap around layers are continuous and conformal layers.
5 . The semiconductor device of claim 1 , wherein the channel epitaxial wrap around layers are composed of silicon doped with carbon (Si:C).
6 . The semiconductor device of claim 1 , wherein the channel epitaxial wrap around layers are composed of silicon germanium (SiGe).
7 . The semiconductor device of claim 1 , wherein the channel epitaxial wrap around layers have a thickness of less than 5 nm.
8 . The semiconductor device of claim 2 , wherein when the channel region is composed of silicon (Si), and the source and drain regions are n-type doped.
9 . The semiconductor device of claim 8 , wherein the channel epitaxial wrap around layers are composed of silicon doped with carbon (Si:C).
10 . The semiconductor device of claim 2 , wherein the channel region is composed of silicon (Si), and the source and drain region are p-type.
11 . The semiconductor device of claim 1 , wherein the channel epitaxial wrap around layers are composed of silicon germanium (SiGe).
12 . The semiconductor device of claim 1 , wherein the channel epitaxial wrap around layer reduces layers reduce gate induced drain leakage (GIDL).
13 . The semiconductor device of claim 1 , wherein the channel epitaxial wrap around layers are composed of a material having a lower threshold voltage than the channel region.
14 . A semiconductor device comprising:
channel epitaxial wrap around layers present on each end of a channel region;
a gate structure including a gate dielectric having end portions over and in direct contact with top surfaces of the channel epitaxial wrap around layers at said each end of the channel region, and a middle portion of the gate dielectric is in direct contact with a center portion of channel region; and
and source and drain regions on portions on opposing sides of the channel region, wherein the channel epitaxial wrap around layers reduce gate induced drain leakage (GIDL).
15 . The semiconductor device of claim 14 further comprising spacers separating the gate structure from source and drain regions.
16 . The semiconductor device of claim 14 , wherein the channel epitaxial wrap around layers are continuous and conformal layers.
17 . The semiconductor device of claim 14 , wherein the channel epitaxial wrap around layers are composed of silicon doped with carbon (Si:C).
18 . The semiconductor device of claim 14 , wherein the channel epitaxial wrap around layers are composed of silicon germanium (SiGe).
19 . The semiconductor device of claim 14 , wherein the channel epitaxial wrap around layers have a thickness of less than 5 nm.
20 . The semiconductor device of claim 14 , wherein the channel epitaxial wrap around layers are composed of a material having a lower threshold voltage than the channel region.