Semiconductor device, display apparatus, and electronic device
View Patent ↗A semiconductor device includes first to tenth transistors and first to fourth capacitors. Gates of the first and the fourth transistors are electrically connected to each other. First terminals of the first, second, fifth, and eighth transistors are electrically connected to a first terminal of the fourth capacitor. A second terminal of the fifth transistor is electrically connected to a gate of the sixth transistor and a first terminal of the second capacitor. A second terminal of the eighth transistor is electrically connected to a gate of the ninth transistor and a first terminal of the third capacitor. Gates of the second, seventh, and tenth transistors are electrically connected to first terminals of the third and fourth transistors and a first terminal of the first capacitor. First terminals of the sixth and seventh transistors are electrically connected to a second terminal of the second capacitor.
1 . A semiconductor device comprising:
a circuit comprising a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor,
wherein a first gate of the first transistor is electrically connected to a first wiring,
wherein a first gate of the fourth transistor is electrically connected to the first wiring,
wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor without passing through any transistor,
wherein the one of the source and the drain of the first transistor is electrically connected to a first gate of the fifth transistor without passing through any transistor,
wherein a first gate of the second transistor is electrically connected to one of a source and a drain of the third transistor, one of a source and a drain of the fourth transistor, and a first gate of the sixth transistor,
wherein one of a source and a drain of the fifth transistor is electrically connected to one of a source and a drain of the sixth transistor,
wherein each of the second transistor, the fourth transistor, and the sixth transistor comprises the first gate which is one of a front gate and a back gate, and a second gate which is the other of the front gate and the back gate,
wherein the second gate of the second transistor and the second gate of the sixth transistor are electrically connected to a second wiring, and
wherein the second gate of the fourth transistor is electrically connected to a third wiring.
2 . The semiconductor device according to claim 1 ,
wherein the circuit further comprises a first capacitor and a second capacitor,
wherein a first terminal of the first capacitor is electrically connected to the first gate of the second transistor,
wherein a first terminal of the second capacitor is electrically connected to the first gate of the fifth transistor, and
wherein a second terminal of the second capacitor is electrically connected to the one of the source and the drain of the fifth transistor.
3 . The semiconductor device according to claim 1 ,
wherein each of the first transistor and the fifth transistor comprises the first gate which is one of a front gate and a back gate, and a second gate which is the other of the front gate and the back gate,
wherein the first gate of the first transistor is electrically connected to the second gate of the first transistor, and
wherein the first gate of the fifth transistor is electrically connected to the second gate of the fifth transistor.
4 . The semiconductor device according to claim 1 ,
wherein the third transistor comprises a first gate which is one of a front gate and a back gate, and a second gate which is the other of the front gate and the back gate, and
wherein the first gate of the third transistor is electrically connected to the second gate of the third transistor.
5 . A semiconductor device comprising:
a circuit comprising a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor,
wherein a first gate of the first transistor is electrically connected to a first wiring,
wherein a first gate of the fourth transistor is electrically connected to the first wiring,
wherein one of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor and a first gate of the fifth transistor,
wherein a first gate of the second transistor is electrically connected to one of a source and a drain of the third transistor without passing through any transistor,
wherein the first gate of the second transistor is electrically connected to one of a source and a drain of the fourth transistor without passing through any transistor, and
wherein the first gate of the second transistor is electrically connected to a first gate of the sixth transistor without passing through any transistor,
wherein one of a source and a drain of the fifth transistor is electrically connected to one of a source and a drain of the sixth transistor,
wherein each of the second transistor, the fourth transistor, and the sixth transistor comprises the first gate which is one of a front gate and a back gate, and a second gate which is the other of the front gate and the back gate,
wherein the second gate of the second transistor and the second gate of the sixth transistor are electrically connected to a second wiring, and
wherein the second gate of the fourth transistor is electrically connected to a third wiring.
6 . The semiconductor device according to claim 5 ,
wherein the circuit further comprises a first capacitor and a second capacitor,
wherein a first terminal of the first capacitor is electrically connected to the first gate of the second transistor,
wherein a first terminal of the second capacitor is electrically connected to the first gate of the fifth transistor, and
wherein a second terminal of the second capacitor is electrically connected to the one of the source and the drain of the fifth transistor.
7 . The semiconductor device according to claim 5 ,
wherein each of the first transistor and the fifth transistor comprises the first gate which is one of a front gate and a back gate, and a second gate which is the other of the front gate and the back gate,
wherein the first gate of the first transistor is electrically connected to the second gate of the first transistor, and
wherein the first gate of the fifth transistor is electrically connected to the second gate of the fifth transistor.
8 . The semiconductor device according to claim 5 ,
wherein the third transistor comprises a first gate which is one of a front gate and a back gate, and a second gate which is the other of the front gate and the back gate, and
wherein the first gate of the third transistor is electrically connected to the second gate of the third transistor.