Substrate processing method and substrate processing apparatus for etching using oxidization
A substrate processing method includes preparing a substrate having a target film including silicon, carbon, and nitrogen on a surface of the substrate; supplying hydrogen gas and oxygen gas to the target film to oxidize a surface layer of the target film and form an oxide film; and etching the oxide film.
1 . A substrate processing method comprising:
preparing a substrate having a target film including silicon, carbon, and nitrogen on a surface of the substrate;
supplying hydrogen gas and oxygen gas to the target film to oxidize a surface layer of the target film and form an oxide film; and
etching the oxide film,
wherein
the etching includes
supplying a gas including a fluorine-containing gas and a basic gas to the target film to convert at least a part of the target film into a reaction product; and
heating the substrate to sublimate the reaction product.
2 . The substrate processing method according to claim 1 , wherein
the fluorine-containing gas is a hydrogen fluoride gas; and
the basic gas is an ammonia gas.
3 . A substrate processing method comprising:
preparing a substrate having a target film including silicon, carbon, and nitrogen on a surface of the substrate;
supplying hydrogen gas and oxygen gas to the target film to oxidize a surface layer of the target film and form an oxide film; and
etching the oxide film,
wherein
the oxide film is formed and etched in a same processing container.
4 . The substrate processing method according to claim 3 , wherein the processing container houses a plurality of the substrates in a shape of a shelf.
5 . The substrate processing method according to claim 1 , wherein the target film further includes an element different from silicon, carbon, and nitrogen.
6 . The substrate processing method according to claim 5 , wherein the element is oxygen, boron, or a combination of oxygen and boron.
7 . The substrate processing method according to claim 1 , wherein the target film is a SiCN film.