Display panel and fabrication method thereof, and mobile terminal
View Patent ↗The present application provides a display panel, a fabrication method thereof, and a mobile terminal. The display panel includes a substrate and a driving circuit layer. The driving circuit layer includes a first active layer, a first gate insulating layer, a first gate, a first interlayer insulating layer, and a source and drain layer. An orthographic projection of the first gate insulating layer on the substrate is within an orthographic projection of the first active layer on the substrate, and an orthographic projection the first gate on the substrate is located within an orthographic projection of the first gate insulating layer on the substrate.
1 . A display panel, comprising:
a substrate; and
a driving circuit layer arranged on a side of the substrate, wherein the driving circuit layer comprises a first active layer, a first gate insulating layer arranged on a side of the first active layer away from the substrate, a first gate arranged on a side of the first gate insulating layer away from the substrate, a second gate corresponding to the first gate, a first interlayer insulating layer arranged on a side of the first gate away from the substrate, a first source and a first drain arranged on a side of the first interlayer insulating layer away from the substrate, a second active layer, a third gate, a fourth gate located between the second active layer and the third gate, a second source, and a second drain; wherein the second gate is located on a side of the first active layer far away from the first gate, the third gate and the second gate are arranged in a same layer, and the first source and the second source are arranged in a same layer, and the first drain and the second drain are arranged in a same layer,
wherein an orthographic projection of the first gate insulating layer on the substrate is within an orthographic projection of the first active layer on the substrate, and an orthographic projection of the first gate on the substrate is located within an orthographic projection of the first gate insulating layer on the substrate.
2 . The display panel of claim 1 , wherein the first active layer comprises a first source conductor region, a first channel region, a first drain conductor region, a first diffusion region between the first source conductor region and the first channel region, and a second diffusion region between the first drain conductor region and the first channel region, wherein the first source is electrically connected to the first source conductor region, and the first drain is electrically connected to the first drain conductor region; and
wherein the first interlayer insulating layer covers at least the first channel region, the first diffusion region, and the second diffusion region.
3 . The display panel of claim 2 , wherein an orthographic projection of the first gate insulating layer on the substrate completely overlaps orthographic projections of the first channel region, the first diffusion region, and the second diffusion region on the substrate, and an orthographic projection of the first gate on the substrate completely overlaps an orthographic projection of the first channel region on the substrate.
4 . The display panel of claim 2 , wherein the first active layer comprises a plurality of oxygen vacancies;
oxygen vacancy concentrations of the first source conductor region and the first drain conductor region are both greater than oxygen vacancy concentrations of the first diffusion region and the second diffusion region; and
the oxygen vacancy concentrations of the first diffusion region and the second diffusion region are both greater than an oxygen vacancy concentration of the first channel region.
5 . The display panel of claim 4 , wherein the first active layer further comprises a third diffusion region located on a side of the first source conductor region away from the first channel region, and a fourth diffusion region located on a side of the first drain conductor region away from the first channel region;
wherein, the oxygen vacancy concentration of the first source conductor region is greater than an oxygen vacancy concentration of the third diffusion region, and the oxygen vacancy concentration of the first drain conductor region is greater than an oxygen vacancy concentration of the fourth diffusion region.
6 . The display panel of claim 2 , wherein a ratio of a sum of a width of the first diffusion region and a width of the second diffusion region to a width of the first channel region is less than 1:1.
7 . The display panel of claim 1 , wherein the first gate insulating layer comprises a first cell corresponding to the first gate and a second cell located outside the first cell, and the first cell is connected to the second cell; and
wherein a thickness of the second cell is smaller than a thickness of the first cell.
8 . A mobile terminal including a display panel and a mobile body, wherein the mobile body is integrated with the display panel:
wherein the display panel comprises:
a substrate;
a driving circuit layer arranged on a side of the substrate, wherein the driving circuit layer comprises a first active layer, a first gate insulating layer arranged on a side of the first active layer away from the substrate, a first gate arranged on a side of the first gate insulating layer away from the substrate, a second gate corresponding to the first gate, a first interlayer insulating layer arranged on a side of the first gate away from the substrate, a first source and a first drain arranged on a side of the first interlayer insulating layer away from the substrate, a second active layer, a third gate, a fourth gate located between the second active layer and the third gate, a second source, and a second drain; wherein the second gate is located on a side of the first active layer far away from the first gate, the third gate and the second gate are arranged in a same layer, and the first source and the second source are arranged in a same layer, and the first drain and the second drain are arranged in a same layer;
wherein an orthographic projection of the first gate insulating layer on the substrate is within an orthographic projection of the first active layer on the substrate, and an orthographic projection the first gate on the substrate is located within an orthographic projection of the first gate insulating layer on the substrate.
9 . The mobile terminal of claim 8 , wherein the first active layer comprises a first source conductor region, a first channel region, a first drain conductor region, and a first diffusion region between the first source conductor region and the first channel region, and a second diffusion region between the first drain conductor region and the first channel region, wherein the first source is electrically connected to the first source conductor region, and the first drain is electrically connected to the first drain conductor region; and
wherein the first interlayer insulating layer covers at least the first channel region, the first diffusion region, and the second diffusion region.
10 . The mobile terminal of claim 9 , wherein, an orthographic projection of the first gate insulating layer on the substrate completely overlaps orthographic projections of the first channel region, the first diffusion region, and the second diffusion region on the substrate, and an orthographic projection of the first gate on the substrate completely overlaps an orthographic projection of the first channel region on the substrate.
11 . The mobile terminal of claim 9 , wherein the first active layer includes a plurality of oxygen vacancies;
oxygen vacancy concentrations of the first source conductor region and the first drain conductor region are both greater than oxygen vacancy concentrations of the first diffusion region and the second diffusion region; and
the oxygen vacancy concentrations of the first diffusion region and the second diffusion region are both greater than an oxygen vacancy concentration of the first channel region.
12 . The mobile terminal of claim 11 , wherein the first active layer further comprises a third diffusion region located on a side of the first source conductor region away from the first channel region, and a fourth diffusion region located on a side of the first drain conductor region away from the first channel region;
wherein, the oxygen vacancy concentration of the first source conductor region is greater than an oxygen vacancy concentration of the third diffusion region, and the oxygen vacancy concentration of the first drain conductor region is greater than an oxygen vacancy concentration of the fourth diffusion region.
13 . The mobile terminal of claim 9 , wherein a ratio of a sum of a width of the first diffusion region and a width of the second diffusion region to a width of the first channel region is less than 1:1.
14 . The mobile terminal of claim 9 , wherein the first gate insulating layer comprises a first cell corresponding to the first gate and a second cell located outside the first cell, and the first cell is connected to the second cell; and
wherein a thickness of the second cell is smaller than a thickness of the first cell.
15 . The display panel of claim 1 , wherein the first gate is a top gate, and the second gate is a bottom gate, and both the first gate and the second gate control on and off of a thin film transistor.
16 . The display panel of claim 1 , wherein the first active layer comprises metal oxide, and the second active layer comprises low temperature polysilicon.
17 . The display panel of claim 1 , further comprising a planarization layer on the first source and the first drain as well as the second source and the second drain, and the planarization layer comprising a plurality of second openings.
18 . The display panel of claim 17 , further comprising an anode layer located on the planarization layer, a pixel definition layer comprising a plurality of third openings located on the anode layer, a luminescent material layer in the third openings, a cathode layer on the luminescent material layer; wherein the anode layer is electrically connected to the second source and the second drain through the second openings.
19 . The mobile terminal of claim 8 , wherein the first gate is a top gate, and the second gate is a bottom gate, and both the first gate and the second gate control on and off of a thin film transistor.
20 . The mobile terminal of claim 8 , wherein the first active layer comprises metal oxide, and the second active layer comprises low temperature polysilicon.