Semiconductor device and method of forming a shielding layer over a semiconductor die after forming a build-up interconnect structure
A semiconductor device is made by forming an interconnect structure over a substrate. A semiconductor die is mounted to the interconnect structure. The semiconductor die is electrically connected to the interconnect structure. A ground pad is formed over the interconnect structure. An encapsulant is formed over the semiconductor die and interconnect structure. A shielding cage can be formed over the semiconductor die prior to forming the encapsulant. A shielding layer is formed over the encapsulant after forming the interconnect structure to isolate the semiconductor die with respect to inter-device interference. The shielding layer conforms to a geometry of the encapsulant and electrically connects to the ground pad. The shielding layer can be electrically connected to ground through a conductive pillar. A backside interconnect structure is formed over the interconnect structure, opposite the semiconductor die.
1. A method of making a semiconductor device, comprising:
providing a first interconnect structure including a ground pad;
disposing a semiconductor die over the first interconnect structure; and
forming a shielding layer over the semiconductor die and first interconnect structure to isolate the semiconductor die with respect to inter-device interference, the shielding layer being electrically coupled to the ground pad.
2. The method of claim 1 , further including depositing an encapsulant over the semiconductor die and first interconnect structure.
3. The method of claim 1 , further including disposing a shielding cage over the semiconductor die to isolate the semiconductor die with respect to inter-device interference.
4. The method of claim 1 , further including forming a second interconnect structure between the semiconductor die and shielding layer.
5. The method of claim 1 , further including forming a second interconnect structure between the first interconnect structure and shielding layer.
6. The method of claim 1 , wherein the ground pad includes an island or ring formed around a peripheral region of the first interconnect structure.
7. A method of making a semiconductor device, comprising:
providing a first interconnect structure;
disposing a semiconductor die over the first interconnect structure; and
disposing a shielding layer over the semiconductor die and first interconnect structure to isolate the semiconductor die with respect to inter-device interference.
8. The method of claim 7 , further including forming a ground pad over the first interconnect structure, wherein the shielding layer is electrically coupled to the ground pad.
9. The method of claim 7 , further including depositing an encapsulant over the semiconductor die and first interconnect structure.
10. The method of claim 7 , further including disposing a shielding cage over the semiconductor die to isolate the semiconductor die with respect to inter-device interference.
11. The method of claim 7 , further including forming a second interconnect structure between the semiconductor die and shielding layer.
12. The method of claim 7 , further including forming a second interconnect structure between the first interconnect structure and shielding layer.
13. The method of claim 7 , wherein the ground pad includes an island or ring formed around a peripheral region of the first interconnect structure.
14. A semiconductor device, comprising:
a first interconnect structure including a ground pad;
a semiconductor die disposed over the first interconnect structure; and
a shielding layer disposed over the semiconductor die and first interconnect structure to isolate the semiconductor die with respect to inter-device interference, the shielding layer being electrically coupled to the ground pad.
15. The semiconductor device of claim 14 , further including an encapsulant deposited over the semiconductor die and first interconnect structure.
16. The semiconductor device of claim 14 , further including a shielding cage disposed over the semiconductor die to isolate the semiconductor die with respect to inter-device interference.
17. The semiconductor device of claim 14 , further including a second interconnect structure formed between the semiconductor die and shielding layer.
18. The semiconductor device of claim 14 , further including a second interconnect structure formed between the first interconnect structure and shielding layer.
19. The semiconductor device of claim 14 , wherein the ground pad includes an island or ring formed around a peripheral region of the first interconnect structure.
20. A semiconductor device, comprising:
a first interconnect structure including a ground pad;
a semiconductor die disposed over the first interconnect structure; and
a shielding layer disposed over the semiconductor die and electrically coupled to the ground pad.
21. The semiconductor device of claim 20 , further including an encapsulant deposited over the semiconductor die and first interconnect structure.
22. The semiconductor device of claim 20 , further including a shielding cage disposed over the semiconductor die to isolate the semiconductor die with respect to inter-device interference.
23. The semiconductor device of claim 20 , further including a second interconnect structure formed between the first interconnect structure and shielding layer.
24. The semiconductor device of claim 20 , wherein the ground pad includes an island or ring formed around a peripheral region of the first interconnect structure.