Semiconductor device with bump formed on substrate to prevent ELK ILD delamination during reflow process
View Patent ↗A semiconductor device that has a flipchip semiconductor die and substrate. A first insulating layer is formed over the substrate. A via is formed through the first insulating layer. Conductive material is deposited in the via to form a conductive pillar or stacked stud bumps. The conductive pillar is electrically connected to a conductive layer within the substrate. A second insulating layer is formed over the first insulating layer. Bump material is formed over the conductive pillar. The bump material is reflowed to form a bump. The first and second insulating layers are removed. The semiconductor die is mounted to the substrate by reflowing the bump to a conductive layer of the die. The semiconductor die also has a third insulating layer formed over the conductive layer and an active surface of the die and UBM formed over the first conductive layer and third insulating layer.
1. A method of making a semiconductor device, comprising:
providing a substrate including an insulating material;
forming an opening partially into the insulating material;
forming an interconnect structure over the substrate including a non-fusible portion extending into the opening in the insulating material; and
disposing a semiconductor die over the substrate and electrically connected to the interconnect structure.
2. The method of claim 1 , wherein the interconnect structure includes a fusible portion disposed over the non-fusible portion opposite the substrate.
3. The method of claim 1 , further including disposing a bump material over the interconnect structure.
4. The method of claim 1 , wherein the interconnect structure includes a conductive pillar or stacked bumps.
5. The method of claim 1 , wherein the semiconductor die includes a flipchip type semiconductor die.
6. A method of making a semiconductor device, comprising:
providing a substrate including an insulating material;
forming an opening into the insulating material; and
forming an interconnect structure over the substrate including a non-fusible portion extending into the opening in the insulating material and a fusible portion disposed over the non-fusible portion opposite the substrate.
7. The method of claim 6 , further including disposing a semiconductor die over the substrate and electrically connected to the interconnect structure.
8. The method of claim 7 , further including:
forming a first conductive layer over a surface of the semiconductor die;
forming an insulating layer over the first conductive layer and the surface of the semiconductor die; and
forming a second conductive layer over the first conductive layer.
9. The method of claim 6 , further including disposing a bump material over the interconnect structure.
10. The method of claim 6 , wherein the interconnect structure includes a conductive pillar or stacked bumps.
11. A semiconductor device, comprising:
a substrate including an insulating material with an opening formed partially into the insulating material; and
an interconnect structure formed on the substrate including a non-fusible portion extending into the opening of the insulating material and a fusible portion disposed over the non-fusible portion opposite the substrate.
12. The semiconductor device of claim 11 , further including a semiconductor die disposed over the substrate and electrically connected to the interconnect structure.
13. The semiconductor device of claim 12 , further including:
a first conductive layer formed over a surface of the semiconductor die;
an insulating layer formed over the first conductive layer and the surface of the semiconductor die; and
a second conductive layer formed over the first conductive layer.
14. The semiconductor device of claim 12 , wherein the semiconductor die includes a flipchip type semiconductor die.
15. The semiconductor device of claim 11 , wherein the interconnect structure includes a conductive pillar or stacked bumps.
16. The semiconductor device of claim 11 , wherein the substrate includes a conductive layer electrically connected to the interconnect structure.
17. A semiconductor device, comprising:
a substrate including an insulating material with an opening formed partially into the insulating material; and
a conductive pillar disposed over the substrate and extending into the opening in the insulating material.
18. The semiconductor device of claim 17 , further including a semiconductor die disposed over the substrate and electrically connected to the conductive pillar.
19. The semiconductor device of claim 18 , further including:
a first conductive layer formed over a surface of the semiconductor die;
an insulating layer formed over the first conductive layer and the surface of the semiconductor die; and
a second conductive layer formed over the first conductive layer.
20. The semiconductor device of claim 18 , wherein the semiconductor die includes a flipchip type semiconductor die.
21. The semiconductor device of claim 17 , further including a fusible material formed over the conductive pillar.
22. The semiconductor device of claim 17 , further including a bump material disposed over the conductive pillar.
23. The semiconductor device of claim 17 , wherein the substrate includes a conductive layer electrically connected to the conductive pillar.
24. A semiconductor device comprising:
a substrate including an insulating material with an opening formed into the insulating material;
an interconnect structure formed over the substrate including a non-fusible portion extending into the opening in the insulating material; and
a semiconductor die disposed over the substrate and electrically connected to the interconnect structure.
25. The semiconductor device of claim 24 , wherein the interconnect structure includes a fusible portion disposed over the non-fusible portion opposite the substrate.
26. The semiconductor device of claim 24 , further including a bump material disposed over the interconnect structure.
27. The semiconductor device of claim 24 , wherein the interconnect structure includes a conductive pillar or stacked bumps.
28. The semiconductor device of claim 24 , wherein the semiconductor die includes a flipchip type semiconductor die.
29. The semiconductor device of claim 24 , wherein the substrate includes a conductive layer electrically connected to the interconnect structure.