Cobalt-containing conductive layers for control gate electrodes in a memory structure
A memory film and a semiconductor channel can be formed within each memory opening that extends through a stack including an alternating plurality of insulator layers and sacrificial material layers. After formation of backside recesses through removal of the sacrificial material layers selective to the insulator layers, a metallic barrier material portion can be formed in each backside recess. A cobalt portion can be formed in each backside recess. Each backside recess can be filled with a cobalt portion alone, or can be filled with a combination of a cobalt portion and a metallic material portion including a material other than cobalt.
1. A three-dimensional memory device comprising:
a stack of alternating layers comprising insulator layers and electrically conductive layers and located over a substrate;
an opening extending through the stack;
a blocking dielectric, at least one charge storage element and a tunneling dielectric located within the opening; and
a semiconductor channel located within the opening, wherein each of the electrically conductive layers comprises:
a metallic barrier material portion comprising a conductive metallic nitride material and directly contacting a respective overlying insulator layer, a respective underlying insulator layer, and a sidewall of the blocking dielectric;
a metallic material portion containing a material other than cobalt and directly contacting the metallic barrier material portion and not directly contacting the insulator layers and not directly contacting the blocking dielectric; and
a cobalt portion consisting essentially of cobalt, contacting the metallic material portion, and not directly contacting any of the insulator layers.
2. The three-dimensional memory device of claim 1 , wherein the electrically conductive layers comprise:
a first control gate electrode located in a first device level; and
a second control gate electrode located in a second device level that is located below the first device level.
3. The three-dimensional memory device of claim 1 , further comprising a backside contact structure extending through a backside contact trench in the stack and in direct contact with the substrate, electrically isolated from the electrically conductive layers by an insulating spacer that laterally surrounds the backside contact structure, and electrically shorted to the semiconductor channel, wherein each of the metallic barrier material portion, the metallic material portion, and the cobalt portion is in direct contact with a sidewall of the insulating spacer.
4. The three-dimensional memory device of claim 1 , wherein each metallic material portion contacts a pair of horizontal surfaces of a respective metallic barrier material portion located at a same level.
5. The three-dimensional memory device of claim 1 , wherein each of the electrically conductive layers contacts surfaces of a backside blocking dielectric layer.
6. The three-dimensional memory device of claim 1 , wherein:
the three-dimensional memory device comprises a vertical NAND device located in a device region;
the electrically conductive layers comprise, or are electrically connected to a respective word line of the vertical NAND device;
the device region comprises:
a plurality of semiconductor channels, wherein at least one end portion of each of the plurality of semiconductor channels extends substantially perpendicular to a top surface of the substrate;
a plurality of charge storage regions, each charge storage region located adjacent to a respective one of the plurality of semiconductor channels; and
a plurality of control gate electrodes having a strip shape extending substantially parallel to the top surface of the substrate;
the plurality of control gate electrodes comprise at least a first control gate electrode located in a first device level and a second control gate electrode located in a second device level;
the electrically conductive layers in the stack are in electrical contact with the plurality of control gate electrodes and extend from the device region to a contact region which includes a plurality of electrically conductive via connections; and
the substrate comprises a silicon substrate containing a driver circuit for the NAND device.
7. The three-dimensional memory device of claim 1 , wherein the metallic material portion consists essentially of a single elemental metal or consists essentially of an intermetallic alloy of at least two elemental metals.
8. The three-dimensional memory device of claim 7 , wherein the metallic barrier material portion has a first horizontal portion overlying the cobalt portion and a second horizontal portion underlying the cobalt portion.
9. The three-dimensional memory device of claim 7 , wherein the metallic material portion consists essentially of an elemental metal selected from molybdenum, tungsten, copper, titanium, and ruthenium, or consists essentially of an intermetallic alloy of at least two elemental metals selected from molybdenum, tungsten, copper, titanium, and ruthenium.
10. The three-dimensional memory device of claim 1 , wherein the cobalt portion is not in direct contact with the metallic barrier material portion.
11. A three-dimensional memory device comprising:
a stack of alternating layers comprising insulator layers and electrically conductive layers and located over a substrate;
a memory opening extending through the stack; and
a memory film and a semiconductor channel located within the memory opening, wherein the memory film comprises a blocking dielectric, at least one charge storage element and a tunneling dielectric;
wherein each of the electrically conductive layers comprises:
a metallic barrier material portion comprising a conductive metallic nitride material and directly contacting a respective overlying insulator layer among the insulator layers of the stack of alternating layers, a respective underlying insulator layer among the insulator layers of the stack of alternating layers, and a sidewall of the blocking dielectric;
a metallic material portion containing a material other than cobalt and directly contacting the metallic barrier material portion and not directly contacting the insulator layers and not directly contacting the blocking dielectric; and
a cobalt portion consisting essentially of cobalt, contacting the metallic material portion, and not directly contacting any of the insulator layers.
12. The three-dimensional memory device of claim 11 , wherein the metallic material portion consists essentially of a single elemental metal or consists essentially of an intermetallic alloy of at least two elemental metals.
13. The three-dimensional memory device of claim 12 , wherein the cobalt portion does not physically contact the metallic barrier material portion.
14. The three-dimensional memory device of claim 13 , wherein the metallic material portion physically contacts the metallic barrier material portion.
15. The three-dimensional memory device of claim 14 , wherein the metallic barrier material portion has a first horizontal portion overlying the cobalt portion and a second horizontal portion underlying the cobalt portion.
16. The three-dimensional memory device of claim 12 , wherein the metallic material portion consists essentially of an elemental metal selected from molybdenum, tungsten, copper, titanium, and ruthenium, or consists essentially of an intermetallic alloy of at least two elemental metals selected from molybdenum, tungsten, copper, titanium, and ruthenium.
17. The three-dimensional memory device of claim 12 , wherein the metallic barrier material portion physically contacts an outer sidewall of the blocking dielectric.
18. The three-dimensional memory device of claim 17 , wherein the semiconductor channel located within the memory opening contacts the tunneling dielectric.
19. The three-dimensional memory device of claim 12 , wherein the electrically conductive layers comprise:
a first control gate electrode located in a first device level; and
a second control gate electrode located in a second device level that is located below the first device level.
20. The three-dimensional memory device of claim 12 , wherein each metallic barrier material portion contacts a respective overlying insulator layer, a respective underlying insulator layer, and a sidewall of a blocking dielectric layer.
21. The three-dimensional memory device of claim 20 , further comprising a backside contact structure extending through a backside contact trench in the stack and in direct contact with the substrate, electrically isolated from the electrically conductive layers by an insulating spacer that laterally surrounds the backside contact structure, and electrically shorted to the semiconductor channel, wherein each of the metallic barrier material portion, the metallic material portion, and the cobalt portion is in direct contact with a sidewall of the insulating spacer.
22. The three-dimensional memory device of claim 21 , wherein the cobalt portion is laterally spaced from a vertical portion of the metallic barrier material portion by the metallic material portion.
23. The three-dimensional memory device of claim 12 , wherein the cobalt portion contacts horizontal surfaces of the metallic material portion and does not contact the metallic barrier material portion.
24. The three-dimensional memory device of claim 11 , wherein:
the three-dimensional memory device comprises a vertical NAND device located in a device region;
the electrically conductive layers comprise, or are electrically connected to a respective word line of the vertical NAND device;
the device region comprises:
a plurality of semiconductor channels, wherein at least one end portion of each of the plurality of semiconductor channels extends substantially perpendicular to a top surface of the substrate;
a plurality of charge storage regions, each charge storage region located adjacent to a respective one of the plurality of semiconductor channels; and
a plurality of control gate electrodes having a strip shape extending substantially parallel to the top surface of the substrate;
the plurality of control gate electrodes comprise at least a first control gate electrode located in a first device level and a second control gate electrode located in a second device level;
the electrically conductive layers in the stack are in electrical contact with the plurality of control gate electrodes and extend from the device region to a contact region which includes a plurality of electrically conductive via connections; and
the substrate comprises a silicon substrate containing a driver circuit for the NAND device.
25. The three-dimensional memory device of claim 11 , wherein the cobalt portion is not in direct contact with the metallic barrier material portion.