Patent Assignment
Reel/Frame 044512/0218
Change of Address
Recorded: 2017-11-28
Pages: 7
Assignor
RENESAS ELECTRONICS CORPORATION
Executed: 2015-07-27
Assignee
RENESAS ELECTRONICS CORPORATION
2-24, TOYOSU 3-CHOME, KOUTOU-KU, TOKYO, JAPAN
Covered Properties
(39)
Plasma Generating Apparatus with Multiple Microwave Introducing Means
Patent:
6,109,208 →
Application:
09/122,061 →
Device for Evaluating Characteristic of Insulated Gate Transistor
Self-Biasing circuit
Patent:
6,249,175 →
Application:
09/496,461 →
Semiconductor memory device having structure for high-speed data processing
Patent:
6,310,808 →
Application:
09/613,503 →
Semiconductor Device Having Mos Transistor for Coupling Two Signal Lines
Semiconductor Integrated Circuit Device Having Circuit Generating Reference Voltage
Multi-Power Semiconductor Integrated Circuit Device
Potential Detecting Circuit Having Wide Operating Margin and Semiconductor Device Including the Same
Semiconductor Integrated Circuit Device Having Efficiently Arranged Link Program Circuitry
Magnetic Record Writing Circuit
Substrate Bias Voltage Generating Circuit
Pll Synthesizer That Uses a Fractional Division Value
Semiconductor Memory Device Having a Column Select Line Transmitting a Column Select Signal
Patent:
6,466,509 →
Application:
10/050,131 →
Semiconductor Memory Device
Semiconductor Integrated Circuit Device with Internal Power Supply Potential Generation Circuit
Semiconductor Integrated Circuit Device and Semiconductor Memory Device Reprogrammable After Assembly
Power Supply Control Circuit for Use in Semiconductor Storage Device
Gas Analyzing Method and Gas Analyzer for Semiconductor Treater
Thin Film Magnetic Memory Device with High-Accuracy Data Read Structure Having a Reduced Number of Circuit Elements
Nonvolatile Semiconductor Memory Device That Can Suppress Effect of Threshold Voltage Variation of Memory Cell Transistor
Semiconductor Integrated Circuit with Voltage Down Converter Adaptable for Burn-in Testing
Semiconductor Memory Device Having a Plurality of Signal Lines for Writing and Reading Data
Defect Inspecting Device for Substrate to Be Processed and Method of Manufacturing Semiconductor Device
Semiconductor Memory Device and Its Testing Method
Semiconductor Storage Unit
Thin Film Magnetic Memory Device Reducing a Charging Time of a Data Line in a Data Read Operation
Thin Film Magnetic Memory Device Provided with a Dummy Cell for Data Read Reference
Semiconductor Device Having Standby Mode and Active Mode
Thin Film Magnetic Memory Device Having Dummy Cell
Memory System
Clock Generating Circuit
Pipeline Nonvolatile Memory Device with Multi-Bit Parallel Read and Write Suitable for Cache Memory
Non-Volatile Memory Device Capable of Generating Accurate Reference Current for Determination
Thin Film Magnetic Memory Device Executing Self-Reference Type Data Read
Thin-Film Magnetic Memory Device Suppressing Parasitic Capacitance Applied to Data Line or the Like
Scan Path Timing Optimizing Apparatus Determining Connection Order of Scan Path Circuits to Realize Optimum Signal Timings
Motor Driving Circuit
Nonvolatile Memory Device with Sense Amplifier Securing Reading Margin
Semiconductor Memory Device
Related Assignments
(3)
Other recorded transfers of the patents in this record — the chain of ownership.
Change of Name
Sep 15, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 024990/0059 →
Merger
Sep 15, 2010
From: RENESAS TECHNOLOGY CORP.
To: NEC ELECTRONICS CORPORATION
Reel/Frame 024990/0098 →
Merger
Nov 28, 2017
From: RENESAS SYSTEM DESIGN CO., LTD.
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 044921/0873 →