Split-gate power module and method for suppressing oscillation therein

1. A method of packaging and interconnecting plural power transistor dies to operate at a first frequency, without oscillation at a second frequency higher than said first frequency but lower than a cutoff frequency of the transistors, the method comprising:

mounting the dies on a substrate with a lower side (drain) of each die electrically and thermally bonded to a first area of a conductive layer on the substrate;

electrically connecting a source of each die to a second area of the conductive layer on the substrate; and

electrically connecting a gate of each die to a third, common, interior central landing area of the conductive layer on the substrate via separate electrical leads,

the leads being sized to substantially the same electrical length and providing a first impedance corresponding to said electrical length from the common area to each gate that will pass the first frequency substantially unattenuated and providing a second impedance from the gate of one die to the gate of a second die that will substantially attenuate the second frequency.

2. A method according to claim 1 , wherein the plural dies are arranged in an array, and the substrate is arranged so that the second area coupled to the sources is positioned outside the array and the third area is interior and central to the array and between the dies.

3. A method according to claim 1 , wherein the plural dies are arranged in an array, which further comprises a set of conductive first jumper wires connecting the third area to a fourth area, and wherein the substrate is arranged so that the second area coupled to the sources is positioned outside of the array on opposite first and second sides, the third area is positioned approximately centrally within the array and the fourth area is substantially outside the array.

4. A method of packaging and interconnecting plural power transistor dies to operate at a first frequency, without oscillation at a second frequency higher than said first frequency but lower than a cutoff frequency of the transistors, the method comprising:

mounting the dies on a substrate with a lower side (drain) of each die electrically and thermally bonded to a first area of a conductive layer on the substrate;

electrically connecting a source of each die to a second area of the conductive layer on the substrate; and

electrically connecting a gate of each die to a third, common, interior central landing area of the conductive layer on the substrate via separate electrical leads,

the leads being sized to substantially the same electrical length and providing a first impedance corresponding to said electrical length from the common area to each gate that will pass the first frequency substantially unattenuated and providing a second impedance from the gate of one die to the gate of a second die that will substantially attenuate the second frequency;

wherein the leads each include a first portion extending from the third area to a gate pad corresponding to the gate of a respective die, the first portion including one or more controlled-impedance films, a second portion connected in series with the first portion, the second portion including the gate pad and a third portion connected in series with the second portion, the third portion including one or more conductive jumpers extending to the gate of the respective die.

5. A method according to claim 4 , wherein at least the first and second portions of the leads are integrally formed in the conductive layer so as to delineate lines of substantially equal, defined impedance on the substrate having substantially equal resistance, inductance and capacitance, and wherein the conductive jumpers are configured to be of substantially equal, defined impedance coupling each gate pad to a respective gate.

6. A method of packaging and interconnecting plural power transistor dies to operate at a first frequency, without oscillation at a second frequency higher than said first frequency but lower than a cutoff frequency of the transistors, the method comprising:

mounting the dies on a substrate with a lower side (drain) of each die electrically and thermally bonded to a first area of a conductive layer on the substrate;

electrically connecting a source of each die to a second area of the conductive layer on the substrate; and

electrically connecting a gate of each die to a third, common, interior central landing area of the conductive layer on the substrate via separate electrical leads,

the leads being sized to substantially the same electrical length and providing a first impedance corresponding to said electrical length from the common area to each gate that will pass the first frequency substantially unattenuated and providing a second impedance from the gate of one die to the gate of a second die that will substantially attenuate the second frequency;

wherein the leads each include a first portion that is integrally formed in the conductive layer and that extends between the third area and an electrically-separate gate pad corresponding with one of the dies, the first portion taking the form of a meandering stripline, and wherein the leads each include a second portion that includes a first set of plural conductive jumpers configured to be of substantially equal, defined impedance coupling each gate pad to the respective gate.

7. The method of claim 6 , wherein the plural dies are arranged in an array; which further comprises a set of conductive first jumper wires connecting the third area to a fourth area, and wherein the substrate is arranged so that the second area coupled to the sources is positioned outside of the array on opposite first and second sides, the third area is positioned approximately centrally within the array and the fourth area is substantially outside the array.

8. The method of claim 2 , 3 , or 7 , wherein the array is rectangular.