Grooved CMP pad
View Patent ↗CMP pads having novel groove configurations are described. For example, described herein are CMP pads comprising primary grooves, secondary grooves, a groove pattern center, and an optional terminal groove. The CMP pads may be made from polyurethane or poly (urethane-urea), and the grooves produced therein may be made by a method from the group consisting of molding, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.
1. A polishing pad for polishing a semiconductor substrate, the polishing pad comprising:
a polishing body having a polishing surface and a back surface, the polishing surface having a pattern of intersecting circumferential and linear radial grooves, the circumferential grooves comprising a plurality of concentric complete dodecahedrons.
2. The polishing pad of claim 1 , wherein a center of the plurality of concentric complete dodecahedrons is located at a center of the polishing pad.
3. The polishing pad of claim 1 , wherein a center of the plurality of concentric complete dodecahedrons is offset from a center of the polishing pad.
4. The polishing pad of claim 1 , wherein the linear radial grooves do not intersect with one another.
5. The polishing pad of claim 1 , wherein, distal from a center of the polishing pad, the linear grooves terminate before an outermost edge of the polishing pad.
6. The polishing pad of claim 5 , wherein the linear grooves terminate at a circular, outermost, terminal groove.
7. The polishing pad of claim 1 , wherein each of the circumferential and linear radial grooves has a width from about 2 to about 100 mils.
8. The polishing pad of claim 1 , wherein the plurality of concentric complete dodecahedrons has a pitch from about 30 to about 1000 mils.
9. The polishing pad of claim 1 , wherein the polishing pad is a molded polishing pad and the circumferential and linear radial grooves are in-situ circumferential and linear radial grooves.
10. The polishing pad of claim 1 , wherein the circumferential and linear radial grooves intersect at vertices of each of the plurality of concentric complete dodecahedrons.
11. A polishing pad for polishing a semiconductor substrate, the polishing pad comprising:
a polishing body having a polishing surface and a back surface, the polishing surface having a pattern of intersecting circumferential and linear radial grooves, the circumferential grooves comprising a plurality of concentric complete polygons, wherein the circumferential and linear radial grooves intersect at vertices of each of the plurality of concentric complete polygons.
12. The polishing pad of claim 11 , wherein a center of the plurality of concentric complete polygons is located at a center of the polishing pad.
13. The polishing pad of claim 11 , wherein a center of the plurality of concentric complete polygons is offset from a center of the polishing pad.
14. The polishing pad of claim 11 , wherein the linear radial grooves do not intersect with one another.
15. The polishing pad of claim 11 , wherein, distal from a center of the polishing pad, the linear grooves terminate before an outermost edge of the polishing pad.
16. The polishing pad of claim 15 , wherein the linear grooves terminate at a circular, outermost, terminal groove.
17. The polishing pad of claim 11 , wherein each of the circumferential and linear radial grooves has a width from about 2 to about 100 mils.
18. The polishing pad of claim 11 , wherein the plurality of concentric complete polygons has a pitch from about 30 to about 1000 mils.
19. The polishing pad of claim 1 , wherein the polishing pad is a molded polishing pad and the circumferential and linear radial grooves are in-situ circumferential and linear radial grooves.