CMP pad with local area transparency
View Patent ↗A CMP polishing pad comprising (a) a polishing layer having a polishing surface and a back surface opposite said polishing surface; said polishing layer having at least one cured opaque thermoset polyurethane region and at least one aperture region; said at least one cured opaque thermoset region has a porosity from about 10% to about 55% by volume; said at least one aperture region having (1) a top opening positioned below the polishing surface, (2) a bottom opening that is co-planar with said back surface and (3) straight line vertical sidewalls extending from said aperture top opening to said aperture bottom opening; said at least one aperture region filled with a cured plug of thermoset polyurethane local area transparency material that has a light transmission of less than 80% at a wavelength from 700 to 710 nanometers and is chemically bonded directly to a thermoset polyurethane opaque area; (b) an aperture-free removable release sheet covering at least a portion of said back surface of the polishing layer; and (c) an adhesive layer interposed between said polishing layer and said release sheet; said adhesive layer capable of adhering the polishing layer to a platen of a CMP apparatus after said release sheet has been removed.
1. A method of fabricating a CMP polishing pad, the method comprising:
providing a first assembly of a non-liquid, only partially cured thermoset polyurethane or polyurea local area transparency intermediate material having one surface affixed to a support member;
positioning said first assembly in a polishing pad making apparatus wherein the affixed surface of the non-liquid, only partially cured thermoset polyurethane or polyurea local area transparency intermediate material is located between a polishing surface region and a bottom surface region of a polishing pad formation region in the polishing pad making apparatus, and wherein the support member of the first assembly is accommodated in the polishing pad making apparatus and located proximate to the polishing surface region and distal from the bottom surface region of the polishing pad formation region in the polishing pad making apparatus;
introducing opaque thermoset polyurethane or polyurea intermediate material into said polishing pad making apparatus;
co-curing the non-liquid, only partially cured thermoset polyurethane or polyurea thermoset local area transparency intermediate material and the opaque thermoset intermediate material to form a polishing layer having a polishing surface and a back surface opposite said polishing surface, the polishing layer comprising a local area transparency (LAT) region disposed in and covalently bonded directly to an opaque polishing region, the LAT region transparent in its entirety; and
subsequent to the co-curing, removing the support member.
2. The method of claim 1 further comprising removing a back portion of the polishing layer to form a polishing pad of predetermined desired thickness, said removing step creating a new bottom surface of the LAT region so that the LAT region is co-planar with the back surface of the polishing layer.
3. The method of claim 2 further comprising attaching an aperture-free removable release sheet covering at least a portion of said back surface of the polishing layer with an adhesive layer interposed between said polishing layer and said release sheet; said adhesive layer capable of adhering the polishing layer to a platen of a CMP apparatus after said release sheet has been removed.
4. The method of claim 1 , wherein the opaque polishing region is a cured closed cell, thermoset polyurethane or polyurea opaque polishing region having a porosity from about 10% to about 55% by volume.
5. The method of claim 1 , wherein the polishing layer has a thickness from about 50 mils to about 200 mils and the thickness of the LAT region is from about 35 to about 150 mils.
6. The method of claim 1 , wherein a groove pattern is positioned in the opaque polishing region, and the LAT region is flat and with no groove pattern.
7. The method of claim 6 , wherein the groove pattern has a depth of about 15 mils to about 100 mils, groove widths of about 15 mils to about 50 mils, and a groove pitch from about 30 mils to about 1000 mils.
8. The method of claim 1 , wherein the hardness of the opaque polishing region is from about 25 to about 75 Shore D, the hardness of the LAT region is from about 25 to about 75 Shore D, the density of the opaque polishing region is from about 0.6 to 1.2 grams per centimeter, and the density of the LAT region is from about 1 to about 1.2 grams per cubic centimeter.
9. The method of claim 1 , wherein the non-liquid, only partially cured thermoset polyurethane or polyurea local area transparency intermediate material has a temperature less than its quench temperature during the positioning of said first assembly in the polishing pad making apparatus.
10. The method of claim 1 , wherein the support member comprises a polymeric film having one surface attached to the non-liquid, only partially cured local area transparency intermediate material surface and having an opposite surface attached to a holding member by an adhesive layer.
11. The method of claim 10 , wherein the polymeric film is a polyimide film.
12. The method of claim 10 , wherein the holding member is an epoxy resin block.
13. The method of claim 1 , wherein the polishing pad making apparatus is a compression molding apparatus.