Customized polish pads for chemical mechanical planarization
View Patent ↗A polishing pad for chemical mechanical planarization of a film on a substrate is customized by obtaining one or more characteristics of a structure on a substrate. For example, when the structure is a chip formed on a semiconductor wafer, the one or more characteristics of the structure can include chip size, pattern density, chip architecture, film material, film topography, and the like. Based on the one or more characteristics of the structure, a value for the one or more chemical or physical properties of the pad is selected. For example, the one or more chemical or physical properties of the pad can include pad material hardness, thickness, surface grooving, pore size, porosity, Youngs modulus, compressibility, asperity, and the like.
1. A method of chemical mechanical planarization of a substrate, the method comprising:
obtaining a characteristic of a structure on a substrate, wherein the characteristic of the structure on the substrate comprises a pattern density and a deposition bias;
selecting a value for a chemical or physical property of a polishing pad to be used in chemical mechanical planarization of the substrate based on the obtained characteristic of the structure on the substrate, wherein the chemical or physical property of the polishing pad is selected from the group consisting of hardness, porosity, Young's modulus, and compressibility of the polishing pad; and
polishing the substrate with the polishing pad having the chemical or physical property with the value.
2. The method of claim 1 , wherein obtaining the characteristic of the structure on the substrate comprises:
obtaining a planarization length of a CMP process; and
performing a sensitivity analysis to determine a correlation between planarization length and the chemical or physical property of the polishing pad.
3. The method of claim 2 , wherein the value for the chemical or physical property is selected based on the determined correlation between planarization length and the chemical or physical property of the polishing pad to optimize planarization length.
4. The method of claim 1 , wherein obtaining the characteristic of the structure on the substrate comprises:
identifying dishing and/or erosion of a CMP process; and
performing a sensitivity analysis to determine a correlation between the chemical or physical property of the polishing pad and dishing and/or erosion.
5. The method of claim 4 , wherein the value for the chemical or physical property is selected based on the determined correlation between the chemical or physical property of the polishing pad and dishing and/or erosion to reduce dishing and/or erosion.
6. The method of claim 1 , wherein obtaining the characteristic of the structure on the substrate comprises:
identifying over-polishing and/or under-polishing of a CMP process; and
performing a sensitivity analysis to determine a correlation between the chemical or physical property of the polishing pad and over-polishing and/or under-polishing.
7. The method of claim 6 , wherein the value for the chemical or physical property is selected based on the determined correlation between the chemical or physical property of the polishing pad and over-polishing and/or under-polishing to reduce over-polishing and/or under-polishing.
8. A method of chemical mechanical planarization of a substrate, the method comprising:
obtaining a characteristic of a structure on a substrate, wherein the characteristic of the structure on the substrate comprises a pattern density and a deposition bias;
selecting a value for a chemical or physical property of a polishing pad to be used in chemical mechanical planarization of the substrate based on the obtained characteristic of the structure on the substrate, wherein the chemical or physical property of the polishing pad is selected from the group consisting of hardness, porosity, Young's modulus, and compressibility of the polishing pad; and
polishing a second substrate with the polishing pad having the chemical or physical property with the value.
9. The method of claim 8 , wherein obtaining the characteristic of the structure on the substrate comprises obtaining a planarization length of a CMP process; and
performing a sensitivity analysis to determine a correlation between planarization length and the chemical or physical property of the polishing pad.
10. The method of claim 9 , wherein the value for the chemical or physical property is selected based on the determined correlation between planarization length and the chemical or physical property of the polishing pad to optimize planarization length.
11. The method of claim 8 , wherein obtaining the characteristic of the structure on the substrate comprises:
identifying dishing and/or erosion of a CMP process; and
performing a sensitivity analysis to determine a correlation between the chemical or physical property of the polishing pad and dishing and/or erosion.
12. The method of claim 11 , wherein the value for the chemical or physical property is selected based on the determined correlation between the chemical or physical property of the polishing pad and dishing and/or erosion to reduce dishing and/or erosion.
13. The method of claim 8 , wherein obtaining the characteristic of the structure on the substrate comprises:
identifying over-polishing and/or under-polishing of a CMP process; and
performing a sensitivity analysis to determine a correlation between the chemical or physical property of the polishing pad and over-polishing and/or under-polishing.
14. The method of claim 13 , wherein the value for the chemical or physical property is selected based on the determined correlation between the chemical or physical property of the polishing pad and over-polishing and/or under-polishing to reduce over-polishing and/or under-polishing.
15. The method of claim 8 , wherein the substrate is a test substrate and the second substrate is a product substrate.