IP Library Granted Patent US 8,702,479
Granted Patent B2
US 8,702,479 · App. 12/979,123 · Granted Apr 22, 2014

Polishing pad with multi-modal distribution of pore diameters

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Quick Facts
Patent No.
US 8,702,479
App. No.
12/979,123
Granted
Apr 22, 2014
Kind
B2
Abstract

Polishing pads with multi-modal distributions of pore diameters are described. Methods of fabricating polishing pads with multi-modal distributions of pore diameters are also described.

Claims (54)

1. A polishing pad for polishing a semiconductor substrate, the polishing pad comprising:

a homogeneous polishing body having a first, grooved surface and a second, flat surface opposite the first surface, the homogeneous polishing body comprising:

a thermoset polyurethane material; and

a plurality of closed cell pores disposed in the thermoset polyurethane material, the plurality of closed cell pores having a multi-modal distribution of diameters, wherein the multi-modal distribution of diameters is graded throughout the thermoset polyurethane material with a gradient from the first, grooved surface to the second, flat surface.

2. The polishing pad of claim 1 , wherein each of the closed cell pores comprises a physical shell.

3. The polishing pad of claim 1 , wherein the multi-modal distribution of diameters is a bimodal distribution of diameters comprising a small diameter mode and a large diameter mode.

4. The polishing pad of claim 3 , wherein the diameter value for the maximum population of the large diameter mode is approximately twice the diameter value of the maximum population of the small diameter mode.

5. The polishing pad of claim 4 , wherein the diameter value for the maximum population of the large diameter mode is approximately 40 microns, and the diameter value of the maximum population of the small diameter mode is approximately 20 microns.

6. The polishing pad of claim 4 , wherein the diameter value for the maximum population of the large diameter mode is approximately 80 microns, and the diameter value of the maximum population of the small diameter mode is approximately 40 microns.

7. The polishing pad of claim 3 , wherein the diameter value for the maximum population of the large diameter mode is approximately four times greater than the diameter value of the maximum population of the small diameter mode.

8. The polishing pad of claim 7 , wherein the diameter value for the maximum population of the large diameter mode is approximately 80 microns, and the diameter value of the maximum population of the small diameter mode is approximately 20 microns.

9. The polishing pad of claim 3 , wherein the diameter of the maximum population of the closed cell pores of the small diameter mode is suitable to provide a polishing surface of the polishing pad with highly uniform polishing slurry distribution, and the diameter of the maximum population of the closed cell pores of the large diameter mode is suitable to provide reservoirs for storing polishing slurry for use with the closed cell pores of the small diameter mode.

10. The polishing pad of claim 3 , wherein the diameter of the maximum population of the closed cell pores of the small diameter mode is suitable to provide a polishing surface of the polishing pad with highly uniform polishing slurry distribution, and the diameter of the maximum population of the closed cell pores of the large diameter mode is suitable to provide locations for receiving a diamond tip during conditioning of the polishing pad.

11. The polishing pad of claim 3 , wherein the diameter of the maximum population of the closed cell pores of the small diameter mode provides an insufficient heat sink during a polishing process, the diameter of the maximum population of the closed cell pores of the large diameter mode is suitable to provide an excessive heat sink during a polishing process, and the combination of the closed cell pores of the small diameter mode and the closed cell pores of the large diameter mode is suitable to provide thermal stability during the polishing process.

12. The polishing pad of claim 3 , wherein the population of the large diameter mode overlaps with the population of the small diameter mode.

13. The polishing pad of claim 3 , wherein the population of the large diameter mode has essentially no overlap with the population of the small diameter mode.

14. The polishing pad of claim 3 , wherein the total population of the large diameter mode is not equal to the total population of the small diameter mode.

15. The polishing pad of claim 3 , wherein the total population of the large diameter mode is approximately equal to the total population of the small diameter mode.

16. The polishing pad of claim 1 , wherein the multi-modal distribution of diameters is a trimodal distribution of diameters comprising a small diameter mode, a medium diameter mode, and a large diameter mode.

17. The polishing pad of claim 16 , wherein the diameter value for the maximum population of the large diameter mode is approximately 80 microns, the diameter value of the maximum population of the medium diameter mode is approximately 40 microns, and the diameter value of the maximum population of the small diameter mode is approximately 20 microns.

18. The polishing pad of claim 1 , wherein the multi-modal distribution of diameters is a bimodal distribution of diameters comprising a small diameter mode proximate to the first, grooved surface, and comprising a large diameter mode proximate to the second, flat surface.

19. The polishing pad of claim 1 , wherein the homogeneous polishing body is a molded homogeneous polishing body.

20. The polishing pad of claim 1 , wherein the homogeneous polishing body further comprises:

an opacifying lubricant distributed approximately evenly throughout the homogeneous polishing body.

21. The polishing pad of claim 1 , further comprising:

a local area transparency (LAT) region disposed in, and covalently bonded with, the homogeneous polishing body.

22. A polishing pad for polishing a semiconductor substrate, the polishing pad comprising:

a homogeneous polishing body comprising:

a thermoset polyurethane material; and

a plurality of closed cell pores disposed in the thermoset polyurethane material, the plurality of closed cell pores having a multi-modal distribution of diameters, wherein each of the plurality of closed cell pores comprises a physical shell.

23. The polishing pad of claim 22 , wherein the multi-modal distribution of diameters is a bimodal distribution of diameters comprising a small diameter mode and a large diameter mode.

24. The polishing pad of claim 23 , wherein the diameter value for the maximum population of the large diameter mode is approximately twice the diameter value of the maximum population of the small diameter mode.

25. The polishing pad of claim 24 , wherein the diameter value for the maximum population of the large diameter mode is approximately 40 microns, and the diameter value of the maximum population of the small diameter mode is approximately 20 microns.

26. The polishing pad of claim 24 , wherein the diameter value for the maximum population of the large diameter mode is approximately 80 microns, and the diameter value of the maximum population of the small diameter mode is approximately 40 microns.

27. The polishing pad of claim 23 , wherein the diameter value for the maximum population of the large diameter mode is approximately four times greater than the diameter value of the maximum population of the small diameter mode.

28. The polishing pad of claim 27 , wherein the diameter value for the maximum population of the large diameter mode is approximately 80 microns, and the diameter value of the maximum population of the small diameter mode is approximately 20 microns.

29. The polishing pad of claim 23 , wherein the diameter of the maximum population of the closed cell pores of the small diameter mode is suitable to provide a polishing surface of the polishing pad with highly uniform polishing slurry distribution, and the diameter of the maximum population of the closed cell pores of the large diameter mode is suitable to provide reservoirs for storing polishing slurry for use with the closed cell pores of the small diameter mode.

30. The polishing pad of claim 23 , wherein the diameter of the maximum population of the closed cell pores of the small diameter mode is suitable to provide a polishing surface of the polishing pad with highly uniform polishing slurry distribution, and the diameter of the maximum population of the closed cell pores of the large diameter mode is suitable to provide locations for receiving a diamond tip during conditioning of the polishing pad.

31. The polishing pad of claim 23 , wherein the diameter of the maximum population of the closed cell pores of the small diameter mode provides an insufficient heat sink during a polishing process, the diameter of the maximum population of the closed cell pores of the large diameter mode is suitable to provide an excessive heat sink during a polishing process, and the combination of the closed cell pores of the small diameter mode and the closed cell pores of the large diameter mode is suitable to provide thermal stability during the polishing process.

32. The polishing pad of claim 23 , wherein the population of the large diameter mode overlaps with the population of the small diameter mode.

33. The polishing pad of claim 23 , wherein the population of the large diameter mode has essentially no overlap with the population of the small diameter mode.

34. The polishing pad of claim 23 , wherein the total population of the large diameter mode is not equal to the total population of the small diameter mode.

35. The polishing pad of claim 23 , wherein the total population of the large diameter mode is approximately equal to the total population of the small diameter mode.

36. The polishing pad of claim 22 , wherein the multi-modal distribution of diameters is a trimodal distribution of diameters comprising a small diameter mode, a medium diameter mode, and a large diameter mode.

37. The polishing pad of claim 36 , wherein the diameter value for the maximum population of the large diameter mode is approximately 80 microns, the diameter value of the maximum population of the medium diameter mode is approximately 40 microns, and the diameter value of the maximum population of the small diameter mode is approximately 20 microns.

38. The polishing pad of claim 22 , wherein the multi-modal distribution of diameters is distributed essentially evenly throughout the thermoset polyurethane material.

39. The polishing pad of claim 22 , wherein the homogeneous polishing body further comprises:

a first, grooved surface; and

a second, flat surface opposite the first surface, wherein the multi-modal distribution of diameters is graded throughout the thermoset polyurethane material with a gradient from the first, grooved surface to the second, flat surface, wherein the multi-modal distribution of diameters is a bimodal distribution of diameters comprising a small diameter mode proximate to the first, grooved surface, and comprising a large diameter mode proximate to the second, flat surface.

40. The polishing pad of claim 22 , wherein the homogeneous polishing body is a molded homogeneous polishing body.

41. The polishing pad of claim 22 , wherein the homogeneous polishing body further comprises:

an opacifying lubricant distributed approximately evenly throughout the homogeneous polishing body.

42. The polishing pad of claim 22 , further comprising:

a local area transparency (LAT) region disposed in, and covalently bonded with, the homogeneous polishing body.

Assignments (10)
CHANGE OF NAME Recorded Nov 22, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065663/0466 →
CHANGE OF NAME Recorded Nov 8, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065517/0783 →
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
SECURITY INTEREST Recorded Jul 8, 2022
From: CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 060615/0001 →
RELEASE OF SECURITY INTEREST Recorded Jul 6, 2022
From: JPMORGAN CHASE BANK, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; KMG-BERNUTH, INC.; MPOWER SPECIALTY CHEMICALS LLC; SEALWELD (USA), INC.; INTERNATIONAL TEST SOLUTIONS, LLC; CMC MATERIALS, INC.
Reel/Frame 060592/0260 →
CHANGE OF NAME Recorded Jan 13, 2021
From: CABOT MICROELECTRONICS CORPORATION
To: CMC MATERIALS, INC.
Reel/Frame 054980/0681 →
RELEASE OF SECURITY INTEREST Recorded Nov 16, 2018
From: BANK OF AMERICA, N.A.
To: CABOT MICROELECTRONICS CORPORATION; NEXPLANAR CORPORATION
Reel/Frame 047586/0400 →
SECURITY AGREEMENT Recorded Nov 16, 2018
From: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; MPOWER SPECIALTY CHEMICALS LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 047588/0263 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 19, 2017
From: NEXPLANAR CORPORATION
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 043046/0377 →
INTELLECTUAL PROPERTY SECURITY JOINDER AGREEMENT Recorded Dec 31, 2015
From: NEXPLANAR CORPORATION
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 037407/0071 →