Bonded structures
A bonded structure is disclosed. The bonded structure can include a first element that has a first bonding surface. The bonded structure can further include a second element that has a second bonding surface. The first and second bonding surfaces are bonded to one another along a bonding interface. The bonded structure can also include an integrated device that is coupled to or formed with the first element or the second element. The bonded structure can further include a channel that is disposed along the bonding interface around the integrated device to define an effectively closed profile The bonded structure can also include a getter material that is disposed in the channel. The getter material is configured to reduce the diffusion of gas into an interior region of the bonded structure.
1. A bonded structure comprising:
a first element having a first bonding surface;
a second element having a second bonding surface, the first and second bonding surfaces directly bonded to, and in direct contact with, one another along a bonding interface without an intervening adhesive;
an integrated device coupled to or formed with the first element or the second element;
a channel disposed along the bonding interface around the integrated device; and
a getter material disposed in the channel, the getter material configured to reduce the diffusion of gas into an interior region of the bonded structure, the getter material completely enclosed by the directly bonded first and second elements with the bonding interface extending to the channel.
2. The bonded structure of claim 1 , wherein the channel comprises a first trench disposed through the first bonding surface and a second trench disposed through the second bonding surface.
3. The bonded structure of claim 1 , wherein the bonded structure comprises a cavity, the integrated device disposed in the cavity.
4. The bonded structure of claim 3 , wherein the channel and the getter material are disposed around the cavity, and the bonded structure further comprising a getter layer disposed along at least a portion of a sidewall of the cavity.
5. The bonded structure of claim 1 , wherein the channel comprises a continuous channel surrounding the integrated device.
6. The bonded structure of claim 1 further comprising a second channel around the channel, the second channel filled with a second getter material different from the getter material in the channel.
7. The bonded structure of claim 1 , wherein the channel comprises a plurality of discontinuous channel portions surrounding the integrated device, wherein a first group of the channel portions are filled with the getter material and a second group of the channel portions are filled with a second getter material.
8. The bonded structure of claim 1 , wherein the channel comprises a first trench disposed through the first bonding surface and a second trench disposed through the second bonding surface wherein the first trench and the second trench are offset laterally along the bonding interface.
9. The bonded structure of claim 1 , wherein the channel is partially filled with the getter material.
10. The bonded structure of claim 1 , wherein the bonding interface comprises an inner bonding interface and an outer bonding interface, and the channel is disposed laterally between the inner bonding interface and the outer bonding interface.
11. The bonded structure of claim 1 , wherein the bonding surface has a dimension from an outer edge to the integrated device in a range of 10 μm to 600 μm.
12. A bonded structure comprising:
a first element;
a second element directly bonded to, and in direct contact with, the first element along a bonding interface without an intervening adhesive; and
a getter material disposed in a space along the bonding surface, the getter material configured to reduce the diffusion of gas into an interior region of the bonded structure, the getter material completely enclosed by the directly bonded first and second elements with the bonding interface extending to the space.
13. The bonded structure of claim 12 , wherein the space comprises a channel.
14. The bonded structure of claim 13 , further comprising an integrated device coupled to or formed with the first element or the second element, wherein the channel is disposed around the integrated device to define an effectively closed profile.
15. A bonded structure comprising:
a first element having a first bonding surface;
a second element having a second bonding surface, the first and second bonding surfaces directly bonded at room temperature to, and in direct contact with, one another along a bonding interface without an intervening adhesive;
an integrated device coupled to or formed with the first element or the second element;
a channel disposed along the bonding interface around the integrated device, the channel comprises a first trench disposed through the first bonding surface; and
a getter material disposed in the channel, the getter material configured to reduce the diffusion of gas into an interior region of the bonded structure, the getter material completely enclosed by the directly bonded first and second elements with the bonding interface extending to the channel.
16. The bonded structure of claim 15 , wherein the bonding interface comprises an inner bonding interface and an outer bonding interface, and the channel is disposed laterally between the inner bonding interface and the outer bonding interface.
17. The bonded structure of claim 15 , wherein the channel is partially filled with the getter material.
18. The bonded structure of claim 15 , wherein the channel is completely filled with the getter material.
19. The bonded structure of claim 15 , wherein the getter material in the channel comprises two or more distinct types of getter material.