Die sidewall coatings and related methods
Various implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; applying a permanent coating material into the plurality of notches; forming a first organic material over the first side of the semiconductor substrate and the plurality of notches; thinning a second side of the semiconductor substrate opposite the first side one of to or into the plurality of notches; and singulating the semiconductor substrate through the permanent coating material into a plurality of semiconductor packages.
1. A semiconductor device comprising:
a first side comprising one or more electrical contacts;
three or more die side walls comprising a thickness;
one of a permanent die support structure, a temporary die support structure, or any combination thereof coupled to the first side; and
an organic permanent coating material coupled only across the thickness of the three or more die side walls.
2. The device of claim 1 wherein the thickness is between 0.1 microns and 125 microns.
3. The device of claim 1 , wherein a warpage of the first side or an opposing second side is less than 200 microns.
4. The device of claim 1 , wherein a perimeter of the semiconductor device is rectangular and a size of the first side is at least 6 mm by 6 mm to 211 mm by 211 mm.
5. The device of claim 1 , wherein a perimeter of the first side is a closed shape and wherein the one of the permanent die support structure, the temporary die support structure, or any combination thereof comprises a perimeter comprising a closed shape.
6. The device of claim 1 , further comprising one of a second permanent die support structure or a temporary die support structure coupled to an opposing second side.
7. The device of claim 1 , wherein the one of the permanent die support structure, the temporary die support structure, or any combination thereof comprises two or more layers.