IP Library › Granted Patent US 12,317,600
Granted Patent B2
US 12,317,600 · App. 16/964,115 · Granted May 27, 2025

Semiconductor material and semiconductor device

Inventors: Hitoshi Kunitake (Kanagawa, JP); Shuhei Nagatsuka (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10D87/00H10D86/80
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Quick Facts
Patent No.
US 12,317,600
App. No.
16/964,115
Granted
May 27, 2025
Kind
B2
Abstract

A semiconductor device in which an electrification phenomenon that leads to characteristic fluctuations, element deterioration, or dielectric breakdown is inhibited is provided. A first transistor, a second transistor, a third transistor, and a fourth transistor are included over a substrate; the fourth transistor includes a first conductor, a second conductor, a third conductor, and an oxide semiconductor; the first conductor is electrically connected to the semiconductor substrate through the first transistor; the second conductor is electrically connected to the semiconductor substrate through the first transistor; the third conductor is electrically connected to the semiconductor substrate through the first transistor; and the fourth conductor is electrically connected to the semiconductor substrate through the first transistor.

Claims (10)

1. A semiconductor device comprising:

a transistor comprising a first conductor, a second conductor, a third conductor, and an oxide semiconductor over a semiconductor substrate;

a first diode element;

a second diode element; and

a third diode element,

wherein the first to third diode elements are in the semiconductor substrate, and

wherein charged charges in the transistor move to the semiconductor substrate through the first diode element, the second diode element, and the third diode element.

2. The semiconductor device according to claim 1 , further comprising a fourth diode element,

wherein the fourth diode element is electrically connected to the semiconductor substrate.

3. The semiconductor device according to claim 1 , wherein the semiconductor device comprises two or more transistors.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 22, 2020
From: KUNITAKE, HITOSHI; NAGATSUKA, SHUHEI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 053284/0001 →
Priority Claims (1)
JP 2018-010564 · Jan 25, 2018 · national
Continuity (1)
Related Publication 20210036025A1 · Feb 4, 2021
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