IP Library Granted Patent US 12,581,994
Granted Patent B2
US 12,581,994 · App. 17/318,344 · Granted Mar 17, 2026

Direct-bonded optoelectronic interconnect for high-density integrated photonics

Inventors: Liang Wang (Newark, CA); Rajesh Katkar (Milpitas, CA)
Assignee: Adeia Semiconductor Bonding Technologies Inc.
H01L25/167H01L23/48H01L23/481H01L23/5385H01L24/04H01L24/08H01L24/80H01L24/83H01L24/94H01L24/95H10H20/8506H10H20/857H01L2224/08145H01L2224/80895H01L2224/83896H01L2924/12041H01L2924/12044H10H20/036H10H20/0364
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,581,994
App. No.
17/318,344
Granted
Mar 17, 2026
Kind
B2
Abstract

Direct-bonded optoelectronic interconnects for high-density integrated photonics are provided. A combined electrical and optical interconnect enables direct-bonding of fully-processed optoelectronic dies or wafers to wafers with optoelectronic driver circuitry. The photonic devices may be III-V semiconductor devices. Direct-bonding to silicon or silicon-on-insulator (SOI) wafers enables the integration of photonics with high-density CMOS and other microelectronics packages. Each bonding surface has an optical window to be coupled by direct-bonding. Coplanar electrical contacts lie to the outside, or may circumscribe the respective optical windows and are also direct-bonded across the interface using metal-to-metal direct-bonding, without interfering with the optical windows. Direct hybrid bonding can accomplish both optical and electrical bonding in one overall operation, to mass-produce mLED video displays. The adhesive-free dielectric-to-dielectric direct bonding and solder-free metal-to-metal direct bonding creates high-density electrical interconnects on the same bonding interface as the bonded optical interconnect. Known-good-dies may be used, which is not possible conventionally, and photolithography over their top surfaces can scale to high density.

Claims (83)

1 . An apparatus comprising:

a first coupling plane formed on a side of a first die having a first optoelectronic device, wherein the first coupling plane comprises:

a first transparent optical window formed in the first coupling plane of the first die;

a first electrical contact outside a perimeter of the first transparent optical window and disposed in the first coupling plane of the first die;

a second electrical contact outside a perimeter of the first electrical contact and disposed in the first coupling plane of the first die; and

a second coupling plane formed on a second die having a waveguide, wherein the second coupling plane comprises an optical window, and wherein the first transparent optical window is directly bonded to the optical window to optically connect the first optoelectronic device and the waveguide.

2 . The apparatus of claim 1 , further comprising:

a first opposing electrical contact outside a perimeter of the optical window and disposed in the second coupling plane of the second die;

a second opposing electrical contact outside a perimeter of the first opposing electrical contact and disposed in the second coupling plane of the second die; and

electrical leads to the first opposing electrical contact and the second opposing electrical contact disposed in the second coupling plane of the second die.

3 . The apparatus of claim 2 , further comprising:

a dielectric-to-dielectric optical interconnect between the first transparent optical window of the first die and the optical window of the second die; and

a solderless metal-to-metal bonded electrical interconnect between (i) the first and second electrical contacts of the first die and (ii) the first and second opposing electrical contacts of the second die forming high-density electrical interconnects on joined coupling planes of the first die and the second die.

4 . The apparatus of claim 2 , further comprising:

a dielectric-to-dielectric optical interconnect between the first transparent optical window of the first die and the optical window of the second die; and

a direct hybrid bonded interconnect between (i) the first and second electrical contacts of the first die and (ii) the first and second opposing electrical contacts of the second die forming high-density electrical interconnects on joined coupling planes of the first die and the second die.

5 . The apparatus of claim 2 , wherein:

the first electrical contact and the second electrical contact of the first die comprises one of a square, rectangular, circular, or ovaline conductive line surrounding the first transparent optical window; and

the first opposing electrical contact and the second opposing electrical contact of the second die comprises a corresponding one of a square, rectangular, circular, or ovaline conductive line surrounding the optical window, the corresponding one of the square, rectangular, circular, or ovaline conductive line surrounding the optical window corresponding to the one of the square, rectangular, circular, or ovaline conductive line surrounding the first transparent optical window.

6 . The apparatus of claim 2 , wherein (i) the first electrical contact of the first transparent optical window of the first die or (ii) the first opposing electrical contact of the second die at least partially circumscribe the second optical window of the second die.

7 . The apparatus of claim 2 ,

wherein the first coupling plane further comprises a first bonding plane associated with the first die and comprising the first transparent optical window, the first electrical contact at least partially circumscribing the first transparent optical window and coplanar with the first transparent optical window, and the second electrical contact at least partially circumscribing the first electrical contact and coplanar with both the first electrical contact and the first transparent optical window; and

wherein the second coupling plane further comprises a second bonding plane associated with the second die comprising the optical window, the first opposing electrical contact of the second die at least partially circumscribing the optical window and coplanar with the optical window, and the second opposing electrical contact of the second die at least partially circumscribing the first opposing electrical contact of the second die and coplanar with both the first opposing electrical contact of the second die and the optical window.

8 . An apparatus comprising a first die comprising an optoelectronic device and a second die, the apparatus further comprising:

a coupling plane formed on a side of the first die, the coupling plane configured to optically and electrically couple with an opposing coupling plane of the second die, wherein at least a portion of the coupling plane directly bonds to at least a portion of the opposing coupling plane;

a first transparent optical window formed in the coupling plane of the first die, the first transparent optical window in communication with the optoelectronic device;

a first electrical contact outside a perimeter of the first transparent optical window and disposed in the coupling plane of the first die;

a second electrical contact outside a perimeter of the first electrical contact and disposed in the coupling plane of the first die;

a first opposing electrical contact disposed in the opposing coupling plane of the second die;

a second opposing electrical contact outside a perimeter of the first opposing electrical contact and disposed in the opposing coupling plane of the second die; and

electrical leads to the first opposing electrical contact and the second opposing electrical contact disposed in the opposing coupling plane of the second die.

9 . The apparatus of claim 8 , further comprising:

the second die comprising a waveguide, the second die further comprising:

the opposing coupling plane formed on the second die, the opposing coupling plane configured to optically and electrically couple with the coupling plane of the first die;

an optical window in the opposing coupling plane of the second die, the optical window in communication with the waveguide;

an optical interconnect between the first transparent optical window of the first die and the optical window of the second die; and

an electrical interconnect between (i) the first and second electrical contacts of the first die and (ii) the first and second opposing electrical contacts of the second die forming high-density electrical interconnects on joined coupling planes of the first die and the second die.

10 . The apparatus of claim 9 , wherein:

the optical interconnect comprises a dielectric-to-dielectric optical interconnect between the first transparent optical window of the first die and the optical window of the second die; and

the electrical interconnect comprises a solderless metal-to-metal bonded electrical interconnect between (i) the first and second electrical contacts of the first die and (ii) the first and second opposing electrical contacts of the second die forming high-density electrical interconnects on joined coupling planes of the first die and the second die.

11 . The apparatus of claim 9 , wherein:

the optical interconnect comprises a dielectric-to-dielectric optical interconnect between the first transparent optical window of the first die and the optical window of the second die; and

the electrical interconnect comprises a direct hybrid bonded interconnect between (i) the first and second electrical contacts of the first die and (ii) the first and second opposing electrical contacts of the second die forming high-density electrical interconnects on joined coupling planes of the first die and the second die.

12 . The apparatus of claim 9 , wherein:

the first electrical contact and the second electrical contact of the first die comprises one of a square, rectangular, circular, or ovaline conductive line surrounding the first transparent optical window; and

the first opposing electrical contact and the second opposing electrical contact of the second die comprises a corresponding one of a square, rectangular, circular, or ovaline conductive line surrounding the optical window, the corresponding one of the square, rectangular, circular, or ovaline conductive line surrounding the optical window corresponding to the one of the square, rectangular, circular, or ovaline conductive line surrounding the first transparent optical window.

13 . The apparatus of claim 9 , wherein (i) electrical contacts of the first die at least partially circumscribe the first transparent optical window of the first die or (ii) opposing electrical contacts of the second die at least partially circumscribe the optical window of the second die.

14 . The apparatus of claim 9 , wherein:

the first electrical contact completely surrounds the first transparent optical window in the coupling plane of the first die; and

the first electrical contact of the optoelectronic device of the first die is disposed outside a perimeter of the optical window of the waveguide of the second die.

15 . The apparatus of claim 9 , wherein the waveguide comprises a silicon waveguide.

16 . The apparatus of claim 9 , wherein:

the first opposing electrical contact is part of an optoelectronic circuit of the second die;

the second opposing electrical contact is part of the optoelectronic circuit; and

an electrical routing from the optoelectronic circuit to the first and second electrical contacts is within the opposing coupling plane of the second die.

17 . The apparatus of claim 16 , wherein:

the second opposing electrical contact comprises an open-loop within the opposing coupling plane of the second die; and

the open-loop comprises a gap in the open-loop for accommodating the electrical routing to the first opposing electrical contact within the opposing coupling plane of the second die.

18 . The apparatus of claim 9 , wherein the optical window of the second die includes at least a grating surface for an optical mode-match coupling between the first die and the second die.

19 . The apparatus of claim 9 , further comprising:

a transparent conductive oxide (TCO) between a III-V compound semiconductor and the waveguide to enhance electrical conductivity into the III-V compound semiconductor and to enhance a uniformity of the electrical conductivity.

20 . The apparatus of claim 19 , wherein the transparent conductive oxide (TCO) is selected from a group consisting of aluminum doped zinc oxide (AZO), gallium doped zinc oxide (GZO), and indium tin oxide (ITO).

21 . An electrical and optical interconnect, comprising:

a first coupling plane formed on a side of a first die;

a first optical window formed in the first coupling plane of the first die;

a first electrical contact outside a perimeter of the first optical window and disposed in the first coupling plane of the first die;

a second electrical contact outside a perimeter of the first electrical contact and disposed in the first coupling plane of the first die;

a second coupling plane formed on a second die;

a second optical window in the second coupling plane of the second die;

a first opposing electrical contact outside a perimeter of the second optical window and disposed in the second coupling plane of the second die;

a second opposing electrical contact outside a perimeter of the first opposing electrical contact and disposed in the second coupling plane of the second die;

electrical leads to the first opposing electrical contact and the second opposing electrical contact disposed in the second coupling plane of the second die;

a dielectric-to-dielectric optical interconnect between the first optical window of the first die and the optical window of the second die; and

a solderless metal-to-metal bonded electrical interconnect between (i) the first and second electrical contacts of the first die and (ii) the first and second opposing electrical contacts of the second die forming high-density electrical interconnects on joined coupling planes of the first die and the second die.

22 . The electrical and optical interconnect of claim 21 , further comprising:

a direct hybrid bonded interconnect between (i) the first and second electrical contacts of the first die and (ii) the first and second opposing electrical contacts of the second die forming high-density electrical interconnects on joined coupling planes of the first die and the second die.

23 . The electrical and optical interconnect of claim 21 , wherein:

the first electrical contact and the second electrical contact of the first die comprises one of a square, rectangular, circular, or ovaline conductive line surrounding the first optical window; and

the first opposing electrical contact and the second opposing electrical contact of the second die comprises a corresponding one of a square, rectangular, circular, or ovaline conductive line surrounding the second optical window, the corresponding one of the square, rectangular, circular, or ovaline conductive line surrounding the second optical window corresponding to the one of the square, rectangular, circular, or ovaline conductive line surrounding the first optical window.

24 . The electrical and optical interconnect of claim 21 , wherein (i) the first electrical contact of the first optical window of the first die or (ii) the first opposing electrical contact of the second die at least partially circumscribe the second optical window of the second die.

25 . The electrical and optical interconnect of claim 21 ,

wherein the first coupling plane further comprises a first bonding plane associated with the first die and comprising the first optical window, the first electrical contact at least partially circumscribing the first optical window and coplanar with the first optical window, and the second electrical contact at least partially circumscribing the first electrical contact and coplanar with both the first electrical contact and the first optical window; and

wherein the second coupling plane further comprises a second bonding plane associated with the second die comprising the second optical window, the first opposing electrical contact of the second die at least partially circumscribing the second optical window and coplanar with the second optical window, and the second opposing electrical contact of the second die at least partially circumscribing the first opposing electrical contact of the second die and coplanar with both the first opposing electrical contact of the second die and the second optical window.

Assignments (3)
CHANGE OF NAME Recorded Dec 18, 2023
From: INVENSAS BONDING TECHNOLOGIES, INC.
To: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.
Reel/Frame 066062/0466 →
SECURITY INTEREST Recorded May 19, 2023
From: ADEIA GUIDES INC.; ADEIA MEDIA HOLDINGS LLC; ADEIA MEDIA SOLUTIONS INC.; ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.; ADEIA SEMICONDUCTOR SOLUTIONS LLC; ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 063707/0884 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 12, 2021
From: WANG, LIANG; KATKAR, RAJESH
To: INVENSAS BONDING TECHNOLOGIES, INC.
Reel/Frame 056216/0302 →
Continuity (3)
Division 16219693 · Dec 13, 2018
Provisional Application 62599146 · Dec 15, 2017
Related Publication 20210265331A1 · Aug 26, 2021
References Cited (400)
US 4998665A · Hayashi · 1991 [cited by applicant]
US 5015052A · Ridgway et al. · 1991 [cited by applicant]
US 5087585A · Hayashi · 1992 [cited by applicant]
US 5225797A · Schary et al. · 1993 [cited by applicant]
US 5322593A · Hasegawa et al. · 1994 [cited by applicant]
US 5363464A · Way et al. · 1994 [cited by applicant]
US 5408053A · Young · 1995 [cited by applicant]
US 5471090A · Deutsch et al. · 1995 [cited by applicant]
US 5557120A · Martin et al. · 1996 [cited by applicant]
US 5753536A · Sugiyama et al. · 1998 [cited by applicant]
US 5771555A · Eda et al. · 1998 [cited by applicant]
US 5785874A · Eda · 1998 [cited by applicant]
US 5818631A · Askinazi et al. · 1998 [cited by applicant]
US 5985739A · Plettner et al. · 1999 [cited by applicant]
US 5998808A · Matsushita · 1999 [cited by applicant]
US 6008126A · Leedy · 1999 [cited by applicant]
US 6080640A · Gardner et al. · 2000 [cited by applicant]
US 6084714A · Ushiyama et al. · 2000 [cited by applicant]
US 6108472A · Rickman et al. · 2000 [cited by applicant]
US 6115264A · Nosaka · 2000 [cited by applicant]
US 6242324B1 · Kub et al. · 2001 [cited by applicant]
US 6265775B1 · Seyyedy · 2001 [cited by applicant]
US 6300161B1 · Goetz et al. · 2001 [cited by applicant]
US 6374770B1 · Lee · 2002 [cited by applicant]
US 6404550B1 · Yajima · 2002 [cited by applicant]
US 6418029B1 · McKee et al. · 2002 [cited by applicant]
US 6423640B1 · Lee et al. · 2002 [cited by applicant]
US 6429532B1 · Han et al. · 2002 [cited by applicant]
US 6442321B1 · Berini · 2002 [cited by applicant]
US 6465892B1 · Suga · 2002 [cited by applicant]
US 6614960B2 · Berini · 2003 [cited by applicant]
US 6638808B1 · Ochi · 2003 [cited by applicant]
US 6713871B2 · Searls et al. · 2004 [cited by applicant]
US 6759692B1 · Ochi · 2004 [cited by applicant]
US 6762796B1 · Nakajoh et al. · 2004 [cited by applicant]
US 6782179B2 · Bozhevolnyi et al. · 2004 [cited by applicant]
US 6801691B2 · Berini · 2004 [cited by applicant]
US 6868258B2 · Hayata et al. · 2005 [cited by applicant]
US 6887769B2 · Kellar et al. · 2005 [cited by applicant]
US 6908027B2 · Tolchinsky et al. · 2005 [cited by applicant]
US 6908832B2 · Farrens et al. · 2005 [cited by applicant]
US 6936854B2 · Iwasaki et al. · 2005 [cited by applicant]
US 6962835B2 · Tong et al. · 2005 [cited by applicant]
US 7010183B2 · Estes et al. · 2006 [cited by applicant]
US 7045453B2 · Canaperi et al. · 2006 [cited by applicant]
US 7060634B2 · Rantala et al. · 2006 [cited by applicant]
US 7078811B2 · Suga · 2006 [cited by applicant]
US 7105980B2 · Abbott et al. · 2006 [cited by applicant]
US 7126212B2 · Enquist et al. · 2006 [cited by applicant]
US 7144827B2 · Rantala et al. · 2006 [cited by applicant]
US 7193423B1 · Dalton et al. · 2007 [cited by applicant]
US 7339798B2 · Chakravorty · 2008 [cited by applicant]
US 7354798B2 · Pogge et al. · 2008 [cited by applicant]
US 7355836B2 · Radhakrishnan et al. · 2008 [cited by applicant]
US 7547954B2 · Geusic et al. · 2009 [cited by applicant]
US 7614771B2 · McKechnie et al. · 2009 [cited by applicant]
US 7626216B2 · McKinzie, III · 2009 [cited by applicant]
US 7705691B2 · Lu et al. · 2010 [cited by applicant]
US 7736945B2 · Schiaffino et al. · 2010 [cited by applicant]
US 7741724B2 · Morikawa et al. · 2010 [cited by applicant]
US 7746663B2 · Hashimoto · 2010 [cited by applicant]
US 7750488B2 · Patti et al. · 2010 [cited by applicant]
US 7791429B2 · Chen et al. · 2010 [cited by applicant]
US 7803693B2 · Trezza · 2010 [cited by applicant]
US 8009763B2 · Risk et al. · 2011 [cited by applicant]
US 8130821B2 · Hopkins et al. · 2012 [cited by applicant]
US 8153505B2 · Tong et al. · 2012 [cited by applicant]
US 8183127B2 · Patti et al. · 2012 [cited by applicant]
US 8211722B2 · Lu · 2012 [cited by applicant]
US 8241961B2 · Kim et al. · 2012 [cited by applicant]
US 8300312B2 · Kobayashi et al. · 2012 [cited by applicant]
US 8314007B2 · Vaufredaz · 2012 [cited by applicant]
US 8349635B1 · Gan et al. · 2013 [cited by applicant]
US 8357931B2 · Schieck et al. · 2013 [cited by applicant]
US 8377798B2 · Peng et al. · 2013 [cited by applicant]
US 8436457B2 · Crisp et al. · 2013 [cited by applicant]
US 8441111B2 · Crisp et al. · 2013 [cited by applicant]
US 8441131B2 · Ryan · 2013 [cited by applicant]
US 8476146B2 · Chen et al. · 2013 [cited by applicant]
US 8476165B2 · Trickett et al. · 2013 [cited by applicant]
US 8482132B2 · Yang et al. · 2013 [cited by applicant]
US 8483253B2 · Budd et al. · 2013 [cited by applicant]
US 8501537B2 · Sadaka et al. · 2013 [cited by applicant]
US 8524533B2 · Tong et al. · 2013 [cited by applicant]
US 8558636B2 · Shin et al. · 2013 [cited by applicant]
US 8620164B2 · Heck et al. · 2013 [cited by applicant]
US 8647987B2 · Yang et al. · 2014 [cited by applicant]
US 8657448B2 · Kobayashi et al. · 2014 [cited by applicant]
US 8697493B2 · Sadaka · 2014 [cited by applicant]
US 8698323B2 · Mohammed et al. · 2014 [cited by applicant]
US 8716105B2 · Sadaka et al. · 2014 [cited by applicant]
US 8764197B2 · Kobayashi · 2014 [cited by applicant]
US 8802538B1 · Liu · 2014 [cited by applicant]
US 8809123B2 · Liu et al. · 2014 [cited by applicant]
US 8841002B2 · Tong · 2014 [cited by applicant]
US 8865489B2 · Rogers et al. · 2014 [cited by applicant]
US 8916448B2 · Cheng et al. · 2014 [cited by applicant]
US 8929077B2 · Gouramanis · 2015 [cited by applicant]
US 8988299B2 · Kam et al. · 2015 [cited by applicant]
US 9022571B2 · Kawase et al. · 2015 [cited by applicant]
US 9093350B2 · Endo et al. · 2015 [cited by applicant]
US 9142517B2 · Liu · 2015 [cited by applicant]
US 9171756B2 · Enquist et al. · 2015 [cited by applicant]
US 9179584B2 · La Porta et al. · 2015 [cited by applicant]
US 9184125B2 · Enquist et al. · 2015 [cited by applicant]
US 9224704B2 · Landru · 2015 [cited by applicant]
US 9230941B2 · Chen et al. · 2016 [cited by applicant]
US 9257399B2 · Kuang et al. · 2016 [cited by applicant]
US 9263186B2 · Li et al. · 2016 [cited by applicant]
US 9299736B2 · Chen et al. · 2016 [cited by applicant]
US 9312229B2 · Chen et al. · 2016 [cited by applicant]
US 9331149B2 · Tong et al. · 2016 [cited by applicant]
US 9337235B2 · Chen et al. · 2016 [cited by applicant]
US 9368866B2 · Yu · 2016 [cited by applicant]
US 9385024B2 · Tong et al. · 2016 [cited by applicant]
US 9391143B2 · Tong et al. · 2016 [cited by applicant]
US 9394161B2 · Cheng et al. · 2016 [cited by applicant]
US 9431368B2 · Enquist et al. · 2016 [cited by applicant]
US 9434145B2 · Erdogan et al. · 2016 [cited by applicant]
US 9437572B2 · Chen et al. · 2016 [cited by applicant]
US 9443796B2 · Chou et al. · 2016 [cited by applicant]
US 9461007B2 · Chun et al. · 2016 [cited by applicant]
US 9496202B2 · Hashimoto · 2016 [cited by applicant]
US 9496239B1 · Edelstein et al. · 2016 [cited by applicant]
US 9536848B2 · England et al. · 2017 [cited by applicant]
US 9537199B2 · Dang et al. · 2017 [cited by applicant]
US 9551880B2 · Amitai · 2017 [cited by applicant]
US 9559081B1 · Lai et al. · 2017 [cited by applicant]
US 9618834B2 · Miyabara et al. · 2017 [cited by applicant]
US 9620481B2 · Edelstein et al. · 2017 [cited by applicant]
US 9625713B2 · Helie et al. · 2017 [cited by applicant]
US 9656852B2 · Cheng et al. · 2017 [cited by applicant]
US 9671572B2 · Decker et al. · 2017 [cited by applicant]
US 9711694B2 · Robin et al. · 2017 [cited by applicant]
US 9723716B2 · Meinhold · 2017 [cited by applicant]
US 9728521B2 · Tsai et al. · 2017 [cited by applicant]
US 9741620B2 · Uzoh et al. · 2017 [cited by applicant]
US 9744754B2 · Wakamatsu et al. · 2017 [cited by applicant]
US 9799587B2 · Fujii et al. · 2017 [cited by applicant]
US 9847458B2 · Lee et al. · 2017 [cited by applicant]
US 9852988B2 · Enquist et al. · 2017 [cited by applicant]
US 9881882B2 · Hsu et al. · 2018 [cited by applicant]
US 9893004B2 · Yazdani · 2018 [cited by applicant]
US 9899442B2 · Katkar · 2018 [cited by applicant]
US 9929050B2 · Lin · 2018 [cited by applicant]
US 9935088B2 · Budd et al. · 2018 [cited by applicant]
US 9941241B2 · Edelstein et al. · 2018 [cited by applicant]
US 9941243B2 · Kim et al. · 2018 [cited by applicant]
US 9953941B2 · Enquist · 2018 [cited by applicant]
US 9960142B2 · Chen et al. · 2018 [cited by applicant]
US 9960152B2 · Bono et al. · 2018 [cited by applicant]
US 10002844B1 · Wang et al. · 2018 [cited by applicant]
US 10026605B2 · Doub et al. · 2018 [cited by applicant]
US 10075657B2 · Fahim et al. · 2018 [cited by applicant]
US 10204893B2 · Uzoh et al. · 2019 [cited by applicant]
US 10269756B2 · Uzoh · 2019 [cited by applicant]
US 10276619B2 · Kao et al. · 2019 [cited by applicant]
US 10276909B2 · Huang et al. · 2019 [cited by applicant]
US 10418277B2 · Cheng et al. · 2019 [cited by applicant]
US 10446487B2 · Huang et al. · 2019 [cited by applicant]
US 10446532B2 · Uzoh et al. · 2019 [cited by applicant]
US 10475778B2 · Pfeuffer et al. · 2019 [cited by applicant]
US 10508030B2 · Katkar et al. · 2019 [cited by applicant]
US 10522499B2 · Enquist et al. · 2019 [cited by applicant]
US 10571699B1 · Parsons et al. · 2020 [cited by applicant]
US 10629577B2 · Tao et al. · 2020 [cited by applicant]
US 10707087B2 · Uzoh et al. · 2020 [cited by applicant]
US 10707374B2 · Danesh et al. · 2020 [cited by applicant]
US 10784191B2 · Huang et al. · 2020 [cited by applicant]
US 10790262B2 · Uzoh et al. · 2020 [cited by applicant]
US 10840135B2 · Uzoh · 2020 [cited by applicant]
US 10840205B2 · Fountain, Jr. et al. · 2020 [cited by applicant]
US 10854578B2 · Morein · 2020 [cited by applicant]
US 10879212B2 · Uzoh et al. · 2020 [cited by applicant]
US 10886177B2 · DeLaCruz et al. · 2021 [cited by applicant]
US 10892246B2 · Uzoh · 2021 [cited by applicant]
US 10923408B2 · Huang et al. · 2021 [cited by applicant]
US 10923413B2 · DeLaCruz · 2021 [cited by applicant]
US 10950547B2 · Mohammed et al. · 2021 [cited by applicant]
US 10964664B2 · Mandalapu et al. · 2021 [cited by applicant]
US 10985133B2 · Uzoh · 2021 [cited by applicant]
US 10991804B2 · DeLaCruz et al. · 2021 [cited by applicant]
US 10998292B2 · Lee et al. · 2021 [cited by applicant]
US 11004757B2 · Katkar et al. · 2021 [cited by applicant]
US 11011494B2 · Gao et al. · 2021 [cited by applicant]
US 11011503B2 · Wang et al. · 2021 [cited by applicant]
US 11031285B2 · Katkar et al. · 2021 [cited by applicant]
US 11056348B2 · Theil · 2021 [cited by applicant]
US 11088099B2 · Katkar et al. · 2021 [cited by applicant]
US 11121289B2 · Martin et al. · 2021 [cited by applicant]
US 11127738B2 · DeLaCruz et al. · 2021 [cited by applicant]
US 11158606B2 · Gao et al. · 2021 [cited by applicant]
US 11171117B2 · Gao et al. · 2021 [cited by applicant]
US 11176450B2 · Teig et al. · 2021 [cited by applicant]
US 11256004B2 · Haba et al. · 2022 [cited by applicant]
US 11264357B1 · DeLaCruz et al. · 2022 [cited by applicant]
US 11276676B2 · Enquist et al. · 2022 [cited by applicant]
US 11296044B2 · Gao et al. · 2022 [cited by applicant]
US 11329034B2 · Tao et al. · 2022 [cited by applicant]
US 11348898B2 · DeLaCruz et al. · 2022 [cited by applicant]
US 11355443B2 · Huang et al. · 2022 [cited by applicant]
US 11624882B2 · Pezeshki et al. · 2023 [cited by applicant]
US 11715730B2 · Tao et al. · 2023 [cited by applicant]
US 11762200B2 · Katkar et al. · 2023 [cited by applicant]
US 11860415B2 · Huang et al. · 2024 [cited by applicant]
US 20020000328A1 · Motomura et al. · 2002 [cited by applicant]
US 20020003307A1 · Suga · 2002 [cited by applicant]
US 20020025101A1 · Kaatz · 2002 [cited by applicant]
US 20020131715A1 · Brady · 2002 [cited by applicant]
US 20030081906A1 · Filhaber et al. · 2003 [cited by applicant]
US 20030168716A1 · Lee et al. · 2003 [cited by applicant]
US 20040071424A1 · Hiraka et al. · 2004 [cited by applicant]
US 20040084414A1 · Sakal et al. · 2004 [cited by applicant]
US 20040149991A1 · Won · 2004 [cited by applicant]
US 20040155692A1 · Ochi · 2004 [cited by applicant]
US 20040157407A1 · Tong et al. · 2004 [cited by applicant]
US 20040207043A1 · Matsunaga et al. · 2004 [cited by applicant]
US 20040226910A1 · Chatterjee et al. · 2004 [cited by applicant]
US 20050063134A1 · Kim et al. · 2005 [cited by applicant]
US 20050063437A1 · Horng et al. · 2005 [cited by applicant]
US 20050135041A1 · Kang et al. · 2005 [cited by applicant]
US 20050190808A1 · Yonekura et al. · 2005 [cited by applicant]
US 20050226299A1 · Horng et al. · 2005 [cited by applicant]
US 20050231303A1 · Chang et al. · 2005 [cited by applicant]
US 20060012966A1 · Chakravorty · 2006 [cited by applicant]
US 20060017144A1 · Uematsu et al. · 2006 [cited by applicant]
US 20060057945A1 · Hsu et al. · 2006 [cited by applicant]
US 20060145778A1 · Pleva et al. · 2006 [cited by applicant]
US 20070045814A1 · Yamamoto et al. · 2007 [cited by applicant]
US 20070085165A1 · Oh et al. · 2007 [cited by applicant]
US 20070096130A1 · Schiaffino et al. · 2007 [cited by applicant]
US 20070096294A1 · Ikeda et al. · 2007 [cited by applicant]
US 20070111386A1 · Kim et al. · 2007 [cited by applicant]
US 20070147014A1 · Chang et al. · 2007 [cited by applicant]
US 20070222048A1 · Huang · 2007 [cited by applicant]
US 20070295456A1 · Gudeman et al. · 2007 [cited by applicant]
US 20080124835A1 · Chen et al. · 2008 [cited by applicant]
US 20080150821A1 · Koch et al. · 2008 [cited by applicant]
US 20090009103A1 · McKechnie et al. · 2009 [cited by applicant]
US 20090052827A1 · Durfee et al. · 2009 [cited by applicant]
US 20090165854A1 · Yamazaki et al. · 2009 [cited by applicant]
US 20090206962A1 · Chou et al. · 2009 [cited by applicant]
US 20090242252A1 · Tanaka · 2009 [cited by applicant]
US 20100317132A1 · Rogers et al. · 2010 [cited by applicant]
US 20110018657A1 · Cheng et al. · 2011 [cited by applicant]
US 20110024918A1 · Brunnbauer et al. · 2011 [cited by applicant]
US 20110059275A1 · Stark · 2011 [cited by applicant]
US 20110113828A1 · Matsumoto · 2011 [cited by applicant]
US 20110115579A1 · Rofougaran · 2011 [cited by applicant]
US 20110165707A1 · Lott et al. · 2011 [cited by applicant]
US 20110290552A1 · Palmateer et al. · 2011 [cited by applicant]
US 20110294242A1 · Lu · 2011 [cited by applicant]
US 20120013013A1 · Sadaka et al. · 2012 [cited by applicant]
US 20120013499A1 · Hayata · 2012 [cited by applicant]
US 20120100318A1 · Danzl et al. · 2012 [cited by applicant]
US 20120147516A1 · Kim et al. · 2012 [cited by applicant]
US 20120168217A1 · Hsu et al. · 2012 [cited by applicant]
US 20120189317A1 · Heck et al. · 2012 [cited by applicant]
US 20120212384A1 · Kam et al. · 2012 [cited by applicant]
US 20130009183A1 · Han · 2013 [cited by applicant]
US 20130009325A1 · Mori et al. · 2013 [cited by applicant]
US 20130020666A1 · Smith · 2013 [cited by applicant]
US 20130063863A1 · Timler et al. · 2013 [cited by applicant]
US 20130072011A1 · Zhang et al. · 2013 [cited by applicant]
US 20130083583A1 · Crisp · 2013 [cited by examiner]
US 20130105943A1 · Lai et al. · 2013 [cited by applicant]
US 20130122617A1 · Lott et al. · 2013 [cited by applicant]
US 20130170145A1 · Gouramanis · 2013 [cited by applicant]
US 20130207234A1 · Ikeda et al. · 2013 [cited by applicant]
US 20130250430A1 · Robbins et al. · 2013 [cited by applicant]
US 20130265733A1 · Herbsommer et al. · 2013 [cited by applicant]
US 20130286544A1 · Azais · 2013 [cited by applicant]
US 20140001568A1 · Wang et al. · 2014 [cited by applicant]
US 20140048908A1 · Chen et al. · 2014 [cited by applicant]
US 20140071519A1 · Chen et al. · 2014 [cited by applicant]
US 20140116761A1 · Lee et al. · 2014 [cited by applicant]
US 20140145338A1 · Fujii et al. · 2014 [cited by applicant]
US 20140175629A1 · Sun et al. · 2014 [cited by applicant]
US 20140175655A1 · Chen et al. · 2014 [cited by applicant]
US 20140177189A1 · Liu et al. · 2014 [cited by applicant]
US 20140184351A1 · Bae et al. · 2014 [cited by applicant]
US 20140225795A1 · Yu · 2014 [cited by applicant]
US 20140252635A1 · Tran et al. · 2014 [cited by applicant]
US 20140264751A1 · Chen et al. · 2014 [cited by applicant]
US 20140264948A1 · Chou et al. · 2014 [cited by applicant]
US 20140294342A1 · Offriein et al. · 2014 [cited by applicant]
US 20140370658A1 · Tong et al. · 2014 [cited by applicant]
US 20140377946A1 · Cha et al. · 2014 [cited by applicant]
US 20150021626A1 · Nakamura et al. · 2015 [cited by applicant]
US 20150064498A1 · Tong · 2015 [cited by applicant]
US 20150097298A1 · Chen et al. · 2015 [cited by applicant]
US 20150179539A1 · Tamai · 2015 [cited by applicant]
US 20150194379A1 · Chen et al. · 2015 [cited by applicant]
US 20150206902A1 · Cheng et al. · 2015 [cited by applicant]
US 20150221571A1 · Chaparala et al. · 2015 [cited by applicant]
US 20150235952A1 · Pan et al. · 2015 [cited by applicant]
US 20150270209A1 · Woychik et al. · 2015 [cited by applicant]
US 20150318618A1 · Chen et al. · 2015 [cited by applicant]
US 20150328875A1 · Hattori et al. · 2015 [cited by applicant]
US 20160027765A1 · von Malm et al. · 2016 [cited by applicant]
US 20160070078A1 · Budd et al. · 2016 [cited by applicant]
US 20160077294A1 · Jou et al. · 2016 [cited by applicant]
US 20160111404A1 · Sanders et al. · 2016 [cited by applicant]
US 20160116673A1 · Budd et al. · 2016 [cited by applicant]
US 20160141469A1 · Robin et al. · 2016 [cited by applicant]
US 20160155677A1 · Bonart et al. · 2016 [cited by applicant]
US 20160181477A1 · Lee et al. · 2016 [cited by applicant]
US 20160197630A1 · Kawasaki · 2016 [cited by applicant]
US 20160233195A1 · Nagai · 2016 [cited by applicant]
US 20160254345A1 · Singh et al. · 2016 [cited by applicant]
US 20160291265A1 · Kinghorn et al. · 2016 [cited by applicant]
US 20160309578A1 · Park · 2016 [cited by applicant]
US 20160343682A1 · Kawasaki · 2016 [cited by applicant]
US 20160372449A1 · Rusu et al. · 2016 [cited by applicant]
US 20170019086A1 · Dueweke · 2017 [cited by applicant]
US 20170047312A1 · Budd et al. · 2017 [cited by applicant]
US 20170062409A1 · Basker et al. · 2017 [cited by applicant]
US 20170069609A1 · Zhang et al. · 2017 [cited by applicant]
US 20170148777A1 · Bono et al. · 2017 [cited by applicant]
US 20170179029A1 · Enquist et al. · 2017 [cited by applicant]
US 20170186670A1 · Budd et al. · 2017 [cited by applicant]
US 20170186730A1 · Shen et al. · 2017 [cited by applicant]
US 20170194271A1 · Hsu et al. · 2017 [cited by applicant]
US 20170207600A1 · Klamkin · 2017 [cited by examiner]
US 20170213502A1 · Henry et al. · 2017 [cited by applicant]
US 20170315299A1 · Mathai et al. · 2017 [cited by applicant]
US 20170330858A1 · Lee et al. · 2017 [cited by applicant]
US 20170331050A1 · Yagi et al. · 2017 [cited by applicant]
US 20170338214A1 · Uzoh et al. · 2017 [cited by applicant]
US 20170343498A1 · Kalnitsky et al. · 2017 [cited by applicant]
US 20180074322A1 · Rousseau et al. · 2018 [cited by applicant]
US 20180120568A1 · Miller et al. · 2018 [cited by applicant]
US 20180156965A1 · El-Ghoroury et al. · 2018 [cited by applicant]
US 20180175012A1 · Wu et al. · 2018 [cited by applicant]
US 20180182639A1 · Uzoh et al. · 2018 [cited by applicant]
US 20180182666A1 · Uzoh et al. · 2018 [cited by applicant]
US 20180190580A1 · Haba et al. · 2018 [cited by applicant]
US 20180190583A1 · DeLaCruz et al. · 2018 [cited by applicant]
US 20180191047A1 · Huang et al. · 2018 [cited by applicant]
US 20180219038A1 · Gambino et al. · 2018 [cited by applicant]
US 20180261645A1 · Na et al. · 2018 [cited by applicant]
US 20180277523A1 · Ahmed et al. · 2018 [cited by applicant]
US 20180286805A1 · Huang et al. · 2018 [cited by applicant]
US 20180323177A1 · Yu et al. · 2018 [cited by applicant]
US 20180323227A1 · Zhang et al. · 2018 [cited by applicant]
US 20180331000A1 · DeLaCruz et al. · 2018 [cited by applicant]
US 20180331066A1 · Uzoh et al. · 2018 [cited by applicant]
US 20180358332A1 · Kim · 2018 [cited by applicant]
US 20190018245A1 · Cheng et al. · 2019 [cited by applicant]
US 20190088633A1 · Tao et al. · 2019 [cited by applicant]
US 20190096741A1 · Uzoh et al. · 2019 [cited by applicant]
US 20190097088A1 · Huppmann · 2019 [cited by examiner]
US 20190115277A1 · Yu et al. · 2019 [cited by applicant]
US 20190131277A1 · Yang et al. · 2019 [cited by applicant]
US 20190198409A1 · Katkar et al. · 2019 [cited by applicant]
US 20190227320A1 · Bonar et al. · 2019 [cited by applicant]
US 20190265411A1 · Huang et al. · 2019 [cited by applicant]
US 20190287949A1 · Chong et al. · 2019 [cited by applicant]
US 20190309936A1 · Kondo et al. · 2019 [cited by applicant]
US 20190333550A1 · Fisch · 2019 [cited by applicant]
US 20190385935A1 · Gao et al. · 2019 [cited by applicant]
US 20190385966A1 · Gao et al. · 2019 [cited by applicant]
US 20200013637A1 · Haba · 2020 [cited by applicant]
US 20200013765A1 · Fountain, Jr. et al. · 2020 [cited by applicant]
US 20200035641A1 · Fountain, Jr. et al. · 2020 [cited by applicant]
US 20200043817A1 · Shen et al. · 2020 [cited by applicant]
US 20200075553A1 · DeLaCruz et al. · 2020 [cited by applicant]
US 20200118973A1 · Wang et al. · 2020 [cited by applicant]
US 20200126906A1 · Uzoh et al. · 2020 [cited by applicant]
US 20200194396A1 · Uzoh · 2020 [cited by applicant]
US 20200194614A1 · Pares · 2020 [cited by applicant]
US 20200194635A1 · Yuasa et al. · 2020 [cited by applicant]
US 20200218009A1 · Preston et al. · 2020 [cited by applicant]
US 20200227367A1 · Haba et al. · 2020 [cited by applicant]
US 20200235085A1 · Tao et al. · 2020 [cited by applicant]
US 20200243380A1 · Uzoh et al. · 2020 [cited by applicant]
US 20200279821A1 · Haba et al. · 2020 [cited by applicant]
US 20200294908A1 · Haba et al. · 2020 [cited by applicant]
US 20200321307A1 · Uzoh · 2020 [cited by applicant]
US 20200328162A1 · Haba et al. · 2020 [cited by applicant]
US 20200328164A1 · DeLaCruz et al. · 2020 [cited by applicant]
US 20200328165A1 · DeLaCruz et al. · 2020 [cited by applicant]
US 20200335408A1 · Gao et al. · 2020 [cited by applicant]
US 20200365575A1 · Uzoh et al. · 2020 [cited by applicant]
US 20200371154A1 · DeLaCruz et al. · 2020 [cited by applicant]
US 20200395321A1 · Katkar et al. · 2020 [cited by applicant]
US 20200411483A1 · Uzoh et al. · 2020 [cited by applicant]
US 20200411587A1 · Pezeshki et al. · 2020 [cited by applicant]
US 20210098412A1 · Haba et al. · 2021 [cited by applicant]
US 20210118853A1 · Harris et al. · 2021 [cited by applicant]
US 20210118864A1 · DeLaCruz et al. · 2021 [cited by applicant]
US 20210143125A1 · DeLaCruz et al. · 2021 [cited by applicant]
US 20210151408A1 · Yu et al. · 2021 [cited by applicant]
US 20210181510A1 · Katkar et al. · 2021 [cited by applicant]
US 20210193603A1 · Katkar et al. · 2021 [cited by applicant]
US 20210193624A1 · DeLaCruz et al. · 2021 [cited by applicant]
US 20210193625A1 · DeLaCruz et al. · 2021 [cited by applicant]
US 20210242152A1 · Fountain, Jr. et al. · 2021 [cited by applicant]
US 20210288037A1 · Tao et al. · 2021 [cited by applicant]
US 20210296282A1 · Gao et al. · 2021 [cited by applicant]