Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings
An alternating stack of first material layers and second material layers is formed over a substrate. A hard mask layer is formed over the alternating stack and cavities are formed in the hard mask layer. A cladding liner is formed on sidewalls of the cavities in the hard mask layer. Via openings are formed through each layer within the alternating stack by performing an anisotropic etch process that transfers a pattern of the cavities through the alternating stack.
1. A method of forming a semiconductor structure, comprising:
forming an alternating stack of first material layers and second material layers over a substrate;
forming a hard mask layer over the alternating stack;
applying and patterning a photoresist layer over the hard mask layer, wherein openings are formed in the photoresist layer;
forming cavities in the hard mask layer;
forming a cladding liner on sidewalls of the cavities in the hard mask layer;
forming via openings in the alternating stack by performing an anisotropic etch process that transfers a pattern of the cavities in the hard mask layer through each layer within the alternating stack employing a combination of the cladding liner and the hard mask layer as an etch mask;
forming a memory film and a vertical semiconductor channel in each respective via opening; and
replacing the second material layers with electrically conductive word lines to form a three-dimensional memory device.
2. The method of claim 1 , wherein the cladding liner comprises an inorganic material.
3. The method of claim 2 , wherein the inorganic material is selected from amorphous carbon, diamond-like carbon, amorphous silicon, polycrystalline silicon, silicon carbide or boron nitride.
4. The method of claim 1 , wherein the cladding liner comprises silicon oxide.
5. The method of claim 1 , wherein the step of forming cavities in the hard mask layer comprises performing a hard mask anisotropic etch process that transfers a pattern of the openings in the photoresist layer through the hard mask layer.
6. The method of claim 1 , further comprising removing the cladding liner after the anisotropic etch process.
7. The method of claim 1 , further comprising removing the hard mask layer after the anisotropic etch process.
8. A method of forming a semiconductor structure, comprising:
forming an alternating stack of first material layers and second material layers over a substrate;
forming a hard mask layer over the alternating stack;
applying and patterning a photoresist layer over the hard mask layer, wherein openings are formed in the photoresist layer;
forming cavities in the hard mask layer;
forming a cladding liner on sidewalls of the cavities in the hard mask layer; and
forming via openings in the alternating stack by performing an anisotropic etch process that transfers a pattern of the cavities in the hard mask layer through each layer within the alternating stack employing a combination of the cladding liner and the hard mask layer as an etch mask;
wherein the cladding liner is deposited by a selective deposition process that grows a material of the cladding liner from physically exposed surfaces of the hard mask layer without growth of the material of the cladding liner from physically exposed surfaces of a dielectric material layer underlying the cavities in the hard mask layer.
9. A method of forming a semiconductor structure, comprising:
forming an alternating stack of first material layers and second material layers over a substrate;
forming a hard mask layer over the alternating stack;
applying and patterning a photoresist layer over the hard mask layer, wherein openings are formed in the photoresist layer;
forming cavities in the hard mask layer;
forming a cladding liner on sidewalls of the cavities in the hard mask layer; and
forming via openings in the alternating stack by performing an anisotropic etch process that transfers a pattern of the cavities in the hard mask layer through each layer within the alternating stack employing a combination of the cladding liner and the hard mask layer as an etch mask;
wherein the cladding liner is deposited by a non-conformal deposition process that deposits a material of the cladding liner anisotropically with a variable thickness that decreases with a vertical distance from a horizontal plane including a top surface of the hard mask layer.
10. A method of forming a semiconductor structure, comprising:
forming an alternating stack of first material layers and second material layers over a substrate;
forming a hard mask layer over the alternating stack;
applying and patterning a photoresist layer over the hard mask layer, wherein openings are formed in the photoresist layer;
forming cavities in the hard mask layer;
forming a cladding liner on sidewalls of the cavities in the hard mask layer; and
forming via openings in the alternating stack by performing an anisotropic etch process that transfers a pattern of the cavities in the hard mask layer through each layer within the alternating stack employing a combination of the cladding liner and the hard mask layer as an etch mask;
wherein the cladding liner comprises a metallic material.
11. The method of claim 10 , wherein the metallic material is selected from TiN, Ru, Co, Mo or W.
12. A method of forming a semiconductor structure, comprising:
forming an alternating stack of first material layers and second material layers over a substrate;
forming a hard mask layer over the alternating stack;
applying and patterning a photoresist layer over the hard mask layer, wherein openings are formed in the photoresist layer;
forming cavities in the hard mask layer;
forming a cladding liner on sidewalls of the cavities in the hard mask layer; and
forming via openings in the alternating stack by performing an anisotropic etch process that transfers a pattern of the cavities in the hard mask layer through each layer within the alternating stack employing a combination of the cladding liner and the hard mask layer as an etch mask;
wherein the hard mask layer comprises a carbon-based hard mask layer comprising at least 60% of carbon in atomic concentration.
13. The method of claim 12 , wherein the hard mask layer comprises a carbon-based patterning film.
14. The method of claim 12 , wherein the carbon-based hard mask layer has a homogenous material composition throughout.
15. The method of claim 12 , wherein:
the carbon-based hard mask layer comprises a boron doped carbon hard mask layer which has an increasing boron concentration with a vertical distance from the substrate; and
the cladding liner grows with a greater lateral thickness at an upper portion of the carbon-based hard mask layer than at a lower portion of the carbon-based hard mask layer.
16. The method of claim 12 , wherein the cladding liner comprises an inorganic material selected from amorphous carbon, diamond-like carbon, amorphous silicon, polycrystalline silicon, silicon carbide or boron nitride.
17. The method of claim 12 , wherein the cladding liner comprises a metallic material selected from TiN, Ru, Co, Mo or W.
18. The method of claim 12 , wherein the cladding liner comprises silicon oxide.
19. A method of forming a semiconductor structure, comprising:
forming an alternating stack of first material layers and second material layers over a substrate;
forming a hard mask layer over the alternating stack;
applying and patterning a photoresist layer over the hard mask layer, wherein openings are formed in the photoresist layer;
forming cavities in the hard mask layer;
forming a cladding liner on sidewalls of the cavities in the hard mask layer; and
forming via openings in the alternating stack by performing an anisotropic etch process that transfers a pattern of the cavities in the hard mask layer through each layer within the alternating stack employing a combination of the cladding liner and the hard mask layer as an etch mask;
wherein the cladding liner is entirely consumed during the anisotropic etch process.