Granted Patent B2

US 12,707,790 · App. 17/734,036 · Granted Aug 11, 2026

Inventors: Martin Behringer (Regensburg, DE); Andreas Biebersdorf (Regensburg, DE); Ruth Boss (Neutraubling, DE); Erwin Lang (Regensburg, DE); Tobias Meyer (Kelheim, DE); Alexander Pfeuffer (Regensburg, DE); Marc Philippens (Regensburg, DE); Julia Stolz (Regensburg, DE); Tansen Varghese (Regensburg, DE); Sebastian Wittmann (Regenstauf, DE); Siegfried Herrmann (Neukirchen, DE); Berthold Hahn (Hemau—Hohenschambach, DE); Bruno Jentzsch (Regensburg, DE); Korbinian Perzlmaier (Regensburg, DE); Peter Stauss (Regensburg, DE); Petrus Sundgren (Lappersdorf, DE); Jens Mueller (Regensburg, DE); Kerstin Neveling (Pentling, DE); Frank Singer (Regenstauf, DE); Christian Mueller (Deuerling, DE)

Assignee: OSRAM Opto Semiconductors GmbH

H10H29/142H10H20/814H10H20/819H10H20/855

Abstract

Claims (61)

1 . Method for processing a number of arrays of optoelectronic components, in particular μ-LEDs or μ-LED arrangements, comprising the following steps:

generating optoelectronic components on a carrier substrate with a first density;

executing of first transfer steps by a first transfer stamp, which transfers the optoelectronic components onto an intermediate carrier, said optoelectronic components on the intermediate carrier having the first density;

carrying out second transfer steps by a second transfer stamp, which transfers the optoelectronic components from the intermediate carrier to a target substrate with a second density, said second density being smaller by a factor n than the first density, said target substrate providing a common array area for a respective one of the number of arrays, wherein a size of the intermediate carrier is equal to or larger than that of the second transfer stamp and a size of the second transfer stamp is equal to or smaller by a factor k than that of the common array area;

characterised in that

when carrying out the first transfer steps, a first lifting force of a lifting of the first transfer stamp is set to be greater than a first adhesive force and less than a second adhesive force in such a way that the optoelectronic components are lifted off the carrier substrate and transferred to the intermediate carrier.

2 . Method according to claim 1 , characterized in that the optoelectronic components are generated connected to respective module areas, which are generated connected to the carrier substrate.

3 . Method according to claim 2 , characterized in that when the optoelectronic components are generated, first anchor elements for connecting with a first adhesive force are formed between module areas and the carrier substrate and/or second anchor elements for connecting with a second adhesive force are formed between the optoelectronic components and the module areas.

4 . Method according to claim 2 ,

characterised in that

when carrying out the second transfer steps, a second lifting force of a lifting of the second transfer stamp is set to be greater than a second holding force in such a way that the optoelectronic components are lifted off the respective module areas and transferred to the target substrate.

5 . Method according to claim 2 ,

characterised in that

when generating the optoelectronic components, first release elements for connecting with an additional first adhesive force are additionally formed between the respective module areas and the carrier substrate and/or second release elements for connecting with an additional second adhesive force are additionally formed between the optoelectronic components and the respective module areas.

6 . Method according to claim 5 , characterized in that

when carrying out the first transfer steps, a first lifting force of a lifting of the first transfer stamp is set to be greater than a total first adhesive force and less than a total second adhesive force in such a way that the respective module areas are lifted off the carrier substrate and transferred to the intermediate carrier.

7 . Method according to claim 6 , characterized in that

the additional first adhesive force has been reduced, especially to zero, by removing the first release elements beforehand.

8 . Method according to claim 5 ,

characterised in that

when carrying out the second transfer steps, a second lifting force of a lifting of the second transfer stamp is set to be greater than a total second holding force in such a way that the optoelectronic components are lifted off the respective module areas and transferred to the target substrate.

9 . Method according to claim 8 , characterized in that

the additional second adhesive force has been reduced, in particular to zero, by removing the second release elements beforehand.

10 . Method according to claim 3 , characterized in that

for adhesion of the module areas on the intermediate carrier, materials with a respective adhesive force greater than a total second adhesive force are used.

11 . Method according to claim 2 , characterized in that

when generating the optoelectronic components for carrying out the first transfer steps, lifting elements are formed directly on the module areas for lifting and transferring the module areas to the intermediate carrier.

12 . Method according to claim 2 , characterised in that

when generating the optoelectronic components for carrying out the first transfer steps, positioning elements are formed directly on the module areas for the precise transfer of the module areas to the intermediate carrier.

13 . Method according to claim 1 , characterised in that

to carry out the second transfer steps, tapping elements are formed on the second transfer stamp for thinning the optoelectronic components to the second density.

14 . Method according to claim 1 , characterised in that

a size of the, in particular rectangular, first transfer stamp is chosen to be smaller by a factor s than a size of the, in particular round, carrier substrate in such a way that the size of an area of lost optoelectronic components at an edge of the carrier substrate for the first transfer for complete loading of the intermediate carrier is, per color, less than or equal to 20% or less than or equal to 30% of a carrier substrate area.

15 . Method according to claim 1 , characterised in that

a size of the, in particular rectangular, first transfer stamp is chosen to be smaller than a size of the intermediate carrier by a factor r in such a way that a number of first transfer steps r for the first transfer for complete loading of the intermediate carrier is, per color, less than or equal to 10 or less than or equal to 50.

16 . Method according to claim 1 , characterised in that

a shape of the intermediate carrier corresponds to a shape of the second transfer stamp and corresponds to a shape of the array surface.

17 . Method according to claim 1 , characterised in that

the intermediate carrier is equipped with tested module areas of the carrier substrate or several, in particular different, carrier substrates.

18 . Method according to claim 1 ,

characterised in that

distances between the optoelectronic components on the respective carrier substrate correspond to distances between the optoelectronic components on the intermediate carrier substrate.

19 . Method according to claim 1 , characterised in that

distances between optoelectronic components on a respective intermediate carrier and on a respective target substrate in an x-direction are different from those in a y-direction.

20 . Method according to claim 1 , characterised in that

the target substrate is loaded with several intermediate carriers.

21 . Method according to claim 1 , characterised in that

a color of the optoelectronic components of a respective intermediate carrier is monochrome red, green, or blue and a number of arrays is formed from three intermediate carriers, which have optoelectronic components of different colors to each other.

22 . Method according to claim 2 , further comprising:

selectively removing first release elements between the carrier substrate and the module areas, and then selectively removing second release elements between the optoelectronic components and the module areas.

23 . A start structure for use in the method of claim 1 , characterized in that module areas are attached to the carrier substrate by first anchor elements, and the optoelectronic components are attached to the module areas by second anchor elements.

24 . A start structure for use in the method according to claim 1 , characterised in that

module areas are fixed to the carrier substrate by first anchor elements and removable first release elements, and

the optoelectronic components are attached to the module areas by second anchor elements and removable second release elements.

25 . A method for processing a number of arrays of optoelectronic components, in particular μ-LEDs or μ-LED arrangements, comprising the following steps:

generating optoelectronic components on a carrier substrate with a first density;

executing of first transfer steps by a first transfer stamp, which transfers the optoelectronic components onto an intermediate carrier, said optoelectronic components on the intermediate carrier having the first density;

carrying out second transfer steps by a second transfer stamp, which transfers the optoelectronic components from the intermediate carrier to a target substrate with a second density, said second density being smaller by a factor n than the first density, said target substrate providing a common array area for a respective one of the number of arrays, wherein a size of the intermediate carrier is equal to or larger than that of the second transfer stamp and a size of the second transfer stamp is equal to or smaller by a factor k than that of the common array area,

wherein a start structure for use is further characterized in that:

module areas are attached to the carrier substrate by first anchor elements, and

the optoelectronic components are attached to the module areas by second anchor elements.

Assignments (2)

Priority Claims (10)

Continuity (3)

References Cited (400)