Granted Patent B2

US 12,374,556 · App. 17/825,224 · Granted Jul 29, 2025

Inventors: Cyprian Emeka Uzoh (San Jose, CA); Guilian Gao (San Jose, CA)

Assignee: ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC.

H01L21/31111H01L21/02057H01L21/31133H01L21/6835H01L21/6836H01L21/78H01L21/76813H01L21/76816H01L21/76832H01L21/76865H01L2221/68327H01L2221/6834H01L2221/68381

Abstract

Claims (41)

1. A method of forming a microelectronic assembly, comprising:

providing a first microelectronic element having a first substrate and a wiring layer at or below a top surface of the first substrate;

coating a top surface of the wiring layer with a first protective layer and a second protective layer;

bonding a second microelectronic element having a second substrate to the second protective layer via an adhesive material;

processing the first microelectronic element;

removing the second microelectronic element;

removing the adhesive material from the second protective layer;

exposing the first microelectronic element, the first and second protective layers, and a residue of the adhesive material to a wet chemical, the wet chemical removing the second protective layer without removing the first protective layer, wherein the wet chemical modifies a characteristic of the first protective layer; and

removing the first protective layer from the top surface of the first substrate.

2. The method of claim 1 , further comprising hybrid bonding the top surface of the first microelectronic element to another microelectronic element.

3. The method of claim 1 , wherein the wet chemical modifies a moisture absorption characteristic of the first protective layer.

4. The method of claim 1 , wherein the wet chemical comprises a buffered oxide etchant or hydrofluoric acid.

5. The method of claim 1 , wherein the wet chemical comprises a complexing agent adapted to suppress dissolution of the wiring layer.

6. A method of forming a microelectronic assembly, comprising:

providing a first microelectronic element having a wiring layer at or below a top surface of the first microelectronic element;

coating the top surface of the wiring layer with one or more protective layers;

bonding a second microelectronic element to the one or more protective layers via an adhesive material;

processing the first microelectronic element;

removing the second microelectronic element;

removing the adhesive material from the one or more protective layers;

exposing the first microelectronic element, the one or more protective layers, and a residue of the adhesive material to a wet chemical, the wet chemical decomposing at least one protective layer, wherein the wet chemical does not dissolve, roughen, or degrade the wiring layer; and

removing the one or more protective layers and the residue of the adhesive material from the top surface of the wiring layer.

7. The method of claim 6 , further comprising hybrid bonding the top surface of the first substrate to another microelectronic element.

8. The method of claim 6 , wherein the wet chemical comprises a buffered oxide etchant or hydrofluoric acid.

9. The method of claim 1 , wherein processing the first microelectronic element comprises removing a portion of a back side of the first substrate.

10. The method of claim 1 , wherein processing the first microelectronic element comprises reducing a thickness of the first substrate.

11. A method of forming a microelectronic assembly, comprising:

providing a substrate including a wiring layer at a bonding surface of the substrate;

coating the wiring layer with one or more protective layers;

exposing the substrate and the one or more protective layers to a wet chemical, wherein the wet chemical comprises a complexing agent adapted to suppress dissolution of the wiring layer while also decomposing the one or more protective layers; and

hybrid bonding the bonding surface of the substrate to another bonding surface of another microelectronic element.

12. The method of claim 11 , further comprising washing the one or more protective layers after exposing the substate and the one or more protective layers to the wet chemical.

13. The method of claim 11 , further comprising singulating the substrate into a plurality of dies.

14. The method of claim 13 , wherein singulating the substrate comprises singulating the substrate before exposing the substrate and the one or more protective layers to the wet chemical.

15. The method of claim 14 , further comprising coating the wiring layer before singulating.

16. The method of claim 13 , wherein singulating the substrate comprises singulating the substrate after exposing the substrate and the one or more protective layers to the wet chemical.

17. The method of claim 13 , wherein hybrid bonding the bonding surface of the substrate comprises hybrid bonding the bonding surface of at least one die of the plurality of dies to the other bonding surface of the other microelectronic element.

18. The method of claim 11 , further comprising, before exposing the substrate and the one or more protective layers to the wet chemical, bonding a second microelectronic element having a second substrate to the one or more protective layers via an adhesive material, processing the substrate, and removing the second microelectronic element.

19. The method of claim 18 , further comprising removing the adhesive material before exposing the substrate and the one or more protective layers to the wet chemical, the wet chemical removing a residue of the adhesive.

20. The method of claim 11 , wherein the wet chemical comprises a buffered oxide etchant or hydrofluoric acid.

21. The method of claim 11 , wherein the one or more protective layers comprises an organic material.

Assignments (3)

Continuity (4)

References Cited (327)

Cited By (1)

US 12,525,572