3D semiconductor device and structure with metal layers
A 3D semiconductor device including: a first level including a single crystal silicon layer and a plurality of first transistors each including a single crystal channel; a first metal layer overlaying the plurality of first transistors; a second metal layer overlaying the first metal layer; a third metal layer overlaying the second metal layer; a second level, where the second level overlays the first level and includes a plurality of second transistors; a fourth metal layer overlaying the second level; and a connective path between the fourth metal layer and either the third metal layer or the second metal layer, where the connective path includes a via disposed through the second level and has a diameter of less than 500 nm and greater than 5 nm, where the third metal layer is connected to provide a power or ground signal to at least one of the second transistors.
1. A 3D semiconductor device, the device comprising:
a first level comprising a single crystal silicon layer and a plurality of first transistors, said plurality of first transistors each comprising a single crystal channel;
a first metal layer overlaying said plurality of first transistors;
a second metal layer overlaying said first metal layer;
a third metal layer overlaying said second metal layer;
a second level,
wherein said second level overlays said first level,
wherein said second level comprises a plurality of second transistors;
a fourth metal layer overlaying said second level; and
a connective path between said fourth metal layer and either said third metal layer or said second metal layer,
wherein said connective path comprises a via disposed through said second level,
wherein said via has a diameter of less than 500 nm and greater than 5 nm,
wherein said third metal layer is connected to provide a power or ground signal to at least one of said plurality of second transistors, and
wherein said second metal layer is 50% thicker than said third metal layer.
2. A 3D semiconductor device, the device comprising:
a first level comprising a single crystal silicon layer and a plurality of first transistors, said plurality of first transistors each comprising a single crystal channel;
a first metal layer overlaying said plurality of first transistors;
a second metal layer overlaying said first metal layer;
a third metal layer overlaying said second metal layer;
a second level,
wherein said second level overlays said first level,
wherein said second level comprises a plurality of second transistors;
a fourth metal layer overlaying said second level; and
a connective path between said fourth metal layer and either said third metal layer or said second metal layer,
wherein said connective path comprises a via disposed through said second level,
wherein said via has a diameter of less than 500 nm and greater than 5 nm,
wherein said third metal layer is connected to provide a power or ground signal to at least one of said plurality of second transistors, and
wherein said third metal layer comprises a connection to a plurality of said second transistors.
3. A 3D semiconductor device, the device comprising:
a first level comprising a single crystal silicon layer and a plurality of first transistors, said plurality of first transistors each comprising a single crystal channel;
a first metal layer overlaying said plurality of first transistors;
a second metal layer overlaying said first metal layer;
a third metal layer overlaying said second metal layer;
a second level,
wherein said second level overlays said first level,
wherein said second level comprises a plurality of second transistors;
a fourth metal layer overlaying said second level; and
a connective path between said fourth metal layer and either said third metal layer or said second metal layer,
wherein said connective path comprises a via disposed through said second level,
wherein said via has a diameter of less than 500 nm and greater than 5 nm,
wherein said third metal layer is connected to provide a power or ground signal to at least one of said plurality of second transistors, and
wherein at least six of said plurality of first transistors are connected in series to form at least a portion of a NAND logic gate.
4. A 3D semiconductor device, the device comprising:
a first level comprising a single crystal silicon layer and a plurality of first transistors, said plurality of first transistors each comprising a single crystal channel;
a first metal layer overlaying said plurality of first transistors;
a second metal layer overlaying said first metal layer;
a third metal layer overlaying said second metal layer;
a second level,
wherein said second level overlays said first level,
wherein said second level comprises a plurality of second transistors;
a fourth metal layer overlaying said second level; and
a connective path between said fourth metal layer and said third metal layer or said second metal layer,
wherein said connective path comprises a via disposed through said second level,
wherein said via has a diameter of less than 500 nm and greater than 5 nm,
wherein at least one of said plurality of second transistors is vertically oriented, and
wherein said third metal layer is connected to provide a power or a ground signal to at least one of said plurality of second transistors.
5. The device according to claim 4 ,
wherein said second metal layer is 50% thicker than said third metal layer.
6. The device according to claim 4 ,
wherein at least one of said plurality of second transistors comprises a metal gate.
7. The device according to claim 4 ,
wherein at least one of said plurality of second transistors comprises a gate all around structure.
8. The device according to claim 4 ,
wherein said third metal layer comprises a connection to said plurality of second transistors.
9. The device according to claim 4 ,
wherein said via comprises tungsten.
10. The device according to claim 4 ,
wherein at least six of said plurality of first transistors are connected in series to form at least a portion of a NAND logic gate.
11. A 3D semiconductor device, the device comprising:
a first level comprising a single crystal silicon layer and plurality of first transistors, said plurality of first transistors each comprising a single crystal channel;
a first metal layer overlaying said plurality of first transistors;
a second metal layer overlaying said first metal layer;
a third metal layer overlaying said second metal layer;
a second level,
wherein said second level overlays said first level,
wherein said second level comprises a plurality of second transistors;
a fourth metal layer overlaying said second level; and
a connective path between said fourth metal layer and said third metal layer or said second metal layer,
wherein said connective path comprises a via disposed through said second level,
wherein said via has a diameter of less than 500 nm and greater than 5 nm,
wherein at least one of said plurality of second transistors comprises a metal gate, and
wherein said third metal layer is connected to provide a power or a ground signal to at least one of said plurality of second transistors.
12. The device according to claim 11 ,
wherein said second metal layer is 50% thicker than said third metal layer.
13. The device according to claim 11 ,
wherein at least one of said plurality of second transistors comprises a gate all around structure.
14. The device according to claim 11 ,
wherein said third metal layer comprises a connection to a plurality of said second transistors.
15. The device according to claim 11 ,
wherein said via comprises tungsten.
16. The device according to claim 11 ,
wherein at least six of said plurality of first transistors are connected in series to form at least a portion of a NAND logic gate.