IP Library Granted Patent US 12,394,471
Granted Patent B2
US 12,394,471 · App. 18/340,726 · Granted Aug 19, 2025

Memory system topologies including a memory die stack

Inventors: Ian Shaeffer (Los Gatos, CA); Ely Tsern (Los Altos, CA); Craig Hampel (Los Altos, CA)
Assignee: Rambus Inc.
G11C11/4093G06F13/16G06F13/4027G06F13/4068G11C5/025G11C5/04G11C5/06G11C7/1006G11C7/222G11C11/4076G11C11/4091G11C11/4094G11C11/4096H01L25/0652H01L25/105G11C7/22H01L24/73H01L25/0657H01L25/18H01L2224/32145H01L2224/48227H01L2224/73265H01L2225/1005H01L2225/1023H01L2225/1058H01L2924/14H01L2924/15192H01L2924/15311H01L2924/15331H01L2924/3011H01L2924/3025
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Quick Facts
Patent No.
US 12,394,471
App. No.
18/340,726
Granted
Aug 19, 2025
Kind
B2
Abstract

Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.

Claims (33)

1. A memory controller for controlling a device having memory dies in a stack configuration, the memory controller comprising:

an interface to transmit to the device a command and a signal selecting the device, the command having multiple bit values; and

circuitry to format the multiple bit values of the command so as to select a memory die of the memory dies in the stack configuration, for a memory access;

wherein the memory dies in the stack configuration comprise a first die stack, wherein the memory controller is to control a second die stack comprising memory dies, each of first die stack and the second die stack corresponding to a respective slice of data, wherein a memory transaction that specifies the memory access is to select a memory die within each of the first die stack and the second die stack in connection with exchange of the respective slice of data, wherein the signal is a first chip select signal, and wherein the interface is to transmit to a second chip select signal to select the second die stack for the memory access.

2. The memory controller of claim 1 , wherein the command comprises a row address, the row address to activate a row in the selected memory die.

3. The memory controller of claim 1 , wherein the selected memory die in each of the first die stack and the second die stack provides a respective slice of data as part of the memory access operation.

4. The memory controller of claim 1 , wherein the device further comprises a serial presence detect (SPD) register, and wherein the memory controller comprises circuitry to receive information from the SPD register, wherein the memory controller is to configure at least one circuit dependent on the received information.

5. The memory controller of claim 4 , wherein the each selected memory die is to exchange read and write data according to a first interface standard, and wherein:

the memory controller comprises a data interface is to exchange data with the device according to a second interface standard, wherein the information received from the SPD register includes information representing the first interface standard; and

the memory controller comprises circuitry to program information into the device to cause the device to convert the read and write data between the first interface standard and the second interface standard.

6. The memory controller of claim 4 , wherein the memory controller comprises circuitry to determine a timing difference between accesses to different ones of the memory dies in the stack configuration, and circuitry to program information representing the timing difference into circuitry on the device for use in exchanging data with the different ones of the memory dies.

7. The memory controller of claim 4 , wherein the received information comprises values representing timing parameters, wherein the timing parameters include row access time, column access time, time between accesses to successive rows, and time between accesses to successive columns, and wherein the interface is to, in a manner timed according to the timing parameters, perform at least one of transmission of at least one the command to the device or transfer with the device of associated data.

8. The memory controller of claim 4 , wherein the received information specifies a number of the memory dies in the stack configuration.

9. The memory controller of claim 1 , wherein the memory controller further comprises circuitry to program information into a register on the device, an access to eachthe selected memory die to be performed by the device according to the information programmed into the register by the memory controller.

10. The memory controller of claim 1 , wherein:

the device comprises an interface and circuitry to communicate with each of the memory dies of the stack configuration via a shared data path having links; and

the memory controller further comprises circuitry to program the device, so as to configure data transfer between the interface of the device and the memory dies in the stack configuration according to a selective data path width, the selective data path width capable of being defined such that data is transferred over less than all of the links of the shared data path.

11. A method of operating a memory controller to control a device having memory dies in a stack configuration, the method comprising:

causing an interface of the memory controller to transmit to the device a command and a signal selecting the device, the command having multiple bit values; and

causing circuitry of the memory controller to format the multiple bit values of the command so as to select a memory die of the memory dies in the stack configuration, for a memory access;

wherein the memory dies in the stack configuration comprise a first die stack, wherein the method further comprises causing the memory controller to control a second die stack comprising memory dies, each of first die stack and the second die stack corresponding to a respective slice of data, wherein a memory transaction that specifies the memory access is to select a memory die within each of the first die stack and the second die stack in connection with exchange of the respective slice of data, wherein the signal is a first chip select signal, and wherein the method further comprises causing the interface to transmit to a second chip select signal, to select the second die stack, for the memory access.

12. The method of claim 11 , wherein the device further comprises a serial presence detect (SPD) register, and wherein the method further comprises causing circuitry of the memory controller to receive information from the SPD register and to configure at least one circuit dependent on the received information.

13. The method of claim 12 , wherein eachthe selected memory die is to exchange read and write data according to a first interface standard, and wherein:

the method further comprises causing a data interface of the memory controller to exchange data with the device according to a second interface standard, wherein the information received from the SPD register includes information representing the first interface standard; and

the method further comprises causing circuitry of the memory controller to program information into the device to cause the device to convert the read and write data between the first interface standard and the second interface standard.

14. The method of claim 12 , further comprising causing circuitry of the memory controller to determine a timing difference between accesses to different ones of the memory dies in the stack configuration, and to program information representing the timing difference into circuitry on the device for use in exchanging data with the different ones of the memory dies.

15. The method of claim 12 , wherein the received information comprises values representing timing parameters, wherein the timing parameters include row access time, column access time, time between accesses to successive rows, and time between accesses to successive columns, and wherein the method further comprises causing the interface, in a manner timed according to the timing parameters, to transmit at least of one the command to the device or to transfer, with the device, associated data.

16. The method of claim 12 , wherein the received information specifies a number of the memory dies in the stack configuration.

17. The method of claim 12 , wherein the method further comprises causing circuitry of the memory controller to program information into a register on the device, an access to each selected memory die then being performed by the device according to the information programmed into the register by the memory controller.

18. A memory controller for controlling a first device having memory dies in a first stack configuration and a second device having memory dies in a second stack configuration, the memory controller comprising:

at least one interface to transmit, to the first device, a first command and a first signal selecting the first device, the first command having multiple bit values, and to the second device, a second command and a second signal selecting the second device, the second command also having multiple bit values;

circuitry to format the multiple bit values of the first command so as to select a memory die of the memory dies in the first stack configuration, for a first memory access, and to format the multiple bit values of the second command so as to select a memory die of the memory dies in the second stack configuration, for a second memory access; and

circuitry to receive information from a register associated with at least one of the first device and the second device, and to responsively configure at least one circuit dependent on the received information, at least one of the first memory access and the second memory access being performed in a manner dependent on the configuration of the at least circuit.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 15, 2025
From: RAMBUS INC.
To: SIGNAL LLP
Reel/Frame 073085/0650 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 23, 2023
From: SHAEFFER, IAN; HAMPEL, CRAIG; TSERN, ELY
To: RAMBUS INC.
Reel/Frame 064050/0325 →
Continuity (16)
Continuation 17717632 · Apr 11, 2022
Continuation 17323889 · May 18, 2021
Continuation 16842368 · Apr 7, 2020
Continuation 16692043 · Nov 22, 2019
Continuation 16214986 · Dec 10, 2018
Continuation 15832468 · Dec 5, 2017
Continuation 15389409 · Dec 22, 2016
Continuation 14801723 · Jul 16, 2015
Continuation 14015648 · Aug 30, 2013
Continuation 13149682 · May 31, 2011
Continuation 12703521 · Feb 10, 2010
Continuation 12424442 · Apr 15, 2009
Division 11697572 · Apr 6, 2007
Continuation In Part 11460899 · Jul 28, 2006
Continuation In Part 11236401 · Sep 26, 2005
Related Publication 20230410890A1 · Dec 21, 2023
References Cited (400)
US 4621339A · Wagner et al. · 1986 [cited by applicant]
US 4631666A · Harris et al. · 1986 [cited by applicant]
US 4644532A · George et al. · 1987 [cited by applicant]
US 4667305A · Dill et al. · 1987 [cited by applicant]
US 4691301A · Anderson · 1987 [cited by applicant]
US 4747070A · Trottier et al. · 1988 [cited by applicant]
US 4747100A · Roach et al. · 1988 [cited by applicant]
US 4858107A · Fedele · 1989 [cited by applicant]
US 4864563A · Pavey et al. · 1989 [cited by applicant]
US 4947257A · Fernandez et al. · 1990 [cited by applicant]
US 4965799A · Green et al. · 1990 [cited by applicant]
US 4977498A · Rastegar et al. · 1990 [cited by applicant]
US 5034917A · Bland et al. · 1991 [cited by applicant]
US 5068650A · Fernandez et al. · 1991 [cited by applicant]
US 5164916A · Wu et al. · 1992 [cited by applicant]
US 5228132A · Neal et al. · 1993 [cited by applicant]
US 5228134A · MacWilliams et al. · 1993 [cited by applicant]
US 5243703A · Farmwald et al. · 1993 [cited by applicant]
US 5283877A · Gastinel et al. · 1994 [cited by applicant]
US 5301278A · Bowater et al. · 1994 [cited by applicant]
US 5307320A · Farrer et al. · 1994 [cited by applicant]
US 5325493A · Herrell et al. · 1994 [cited by applicant]
US 5355467A · MacWilliams et al. · 1994 [cited by applicant]
US 5371880A · Bhattacharya · 1994 [cited by applicant]
US 5392407A · Heil et al. · 1995 [cited by applicant]
US 5400360A · Richards et al. · 1995 [cited by applicant]
US 5408646A · Olnowich et al. · 1995 [cited by applicant]
US 5432823A · Gasbarro et al. · 1995 [cited by applicant]
US 5475818A · Molyneaux et al. · 1995 [cited by applicant]
US 5509138A · Cash et al. · 1996 [cited by applicant]
US 5511224A · Tran et al. · 1996 [cited by applicant]
US 5513135A · Dell et al. · 1996 [cited by applicant]
US 5513377A · Capowski et al. · 1996 [cited by applicant]
US 5537394A · Abe et al. · 1996 [cited by applicant]
US 5544342A · Dean · 1996 [cited by applicant]
US 5553266A · Metzger et al. · 1996 [cited by applicant]
US 5557266A · Calvignac et al. · 1996 [cited by applicant]
US 5566122A · Schaefer · 1996 [cited by applicant]
US 5574945A · Elko et al. · 1996 [cited by applicant]
US 5602780A · Diem et al. · 1997 [cited by applicant]
US 5604735A · Levinson et al. · 1997 [cited by applicant]
US 5606717A · Farmwald et al. · 1997 [cited by applicant]
US 5630095A · Snyder · 1997 [cited by applicant]
US 5630170A · Koizumi · 1997 [cited by applicant]
US 5638334A · Farmwald et al. · 1997 [cited by applicant]
US 5642444A · Mostafavi · 1997 [cited by applicant]
US 5644541A · Siu et al. · 1997 [cited by applicant]
US 5655113A · Leung et al. · 1997 [cited by applicant]
US 5657481A · Farmwald et al. · 1997 [cited by applicant]
US 5659710A · Sherman et al. · 1997 [cited by applicant]
US 5701313A · Purdham · 1997 [cited by applicant]
US 5701438A · Bains · 1997 [cited by applicant]
US 5742840A · Hansen et al. · 1998 [cited by applicant]
US 5748872A · Norman · 1998 [cited by applicant]
US 5758056A · Barr · 1998 [cited by applicant]
US 5781717A · Wu et al. · 1998 [cited by applicant]
US 5787083A · Iwamoto et al. · 1998 [cited by applicant]
US 5802054A · Bellenger · 1998 [cited by applicant]
US 5802565A · McBride et al. · 1998 [cited by applicant]
US 5805089A · Fiedler · 1998 [cited by applicant]
US 5805798A · Kearns et al. · 1998 [cited by applicant]
US 5838603A · Mori et al. · 1998 [cited by applicant]
US 5838985A · Ohki · 1998 [cited by applicant]
US 5845108A · Yoo et al. · 1998 [cited by applicant]
US 5848145A · Gallagher et al. · 1998 [cited by applicant]
US 5860080A · James et al. · 1999 [cited by applicant]
US 5867180A · Katayama et al. · 1999 [cited by applicant]
US 5867422A · John · 1999 [cited by applicant]
US 5883839A · Tosaka et al. · 1999 [cited by applicant]
US 5884036A · Haley · 1999 [cited by applicant]
US 5889726A · Jeddeloh · 1999 [cited by applicant]
US 5893921A · Bucher et al. · 1999 [cited by applicant]
US 5896383A · Wakeland · 1999 [cited by applicant]
US 5898863A · Ofer et al. · 1999 [cited by applicant]
US 5900017A · Genduso et al. · 1999 [cited by applicant]
US 5901294A · Tran et al. · 1999 [cited by applicant]
US 5910921A · Beffa et al. · 1999 [cited by applicant]
US 5911052A · Singhal et al. · 1999 [cited by applicant]
US 5913044A · Tran et al. · 1999 [cited by applicant]
US 5917760A · Millar · 1999 [cited by applicant]
US 5923893A · Moyer et al. · 1999 [cited by applicant]
US 5926839A · Katayama · 1999 [cited by applicant]
US 5953215A · Karabatsos · 1999 [cited by applicant]
US 5977806A · Kikuchi · 1999 [cited by applicant]
US 5982238A · Soderquist · 1999 [cited by applicant]
US 5987576A · Johnson et al. · 1999 [cited by applicant]
US 6006318A · Hansen et al. · 1999 [cited by applicant]
US 6016282A · Keeth · 2000 [cited by applicant]
US 6034878A · Osaka et al. · 2000 [cited by applicant]
US 6038682A · Norman · 2000 [cited by applicant]
US 6065092A · Roy · 2000 [cited by applicant]
US 6092229A · Boyle et al. · 2000 [cited by applicant]
US 6097883A · Dell et al. · 2000 [cited by applicant]
US 6104417A · Nielsen et al. · 2000 [cited by applicant]
US 6108731A · Suzuki et al. · 2000 [cited by applicant]
US 6125419A · Umemura et al. · 2000 [cited by applicant]
US 6128756A · Beffa · 2000 [cited by applicant]
US 6142830A · Loeffler · 2000 [cited by applicant]
US 6151648A · Haq · 2000 [cited by applicant]
US 6154821A · Barth et al. · 2000 [cited by applicant]
US 6154826A · Wulf et al. · 2000 [cited by applicant]
US 6154855A · Norman · 2000 [cited by applicant]
US 6160423A · Haq · 2000 [cited by applicant]
US 6182257B1 · Gillingham · 2001 [cited by applicant]
US 6185644B1 · Farmwald et al. · 2001 [cited by applicant]
US 6185654B1 · Van Doren · 2001 [cited by applicant]
US 6208273B1 · Dye et al. · 2001 [cited by applicant]
US 6226723B1 · Gustavson et al. · 2001 [cited by applicant]
US 6247100B1 · Drehmel et al. · 2001 [cited by applicant]
US 6255859B1 · Haq · 2001 [cited by applicant]
US 6263413B1 · Motomura et al. · 2001 [cited by applicant]
US 6263448B1 · Tsern et al. · 2001 [cited by applicant]
US 6266252B1 · Karabatsos · 2001 [cited by applicant]
US 6272034B1 · Kinoshita et al. · 2001 [cited by applicant]
US 6272609B1 · Jeddeloh · 2001 [cited by applicant]
US 6276844B1 · Coteus et al. · 2001 [cited by applicant]
US 6292877B1 · Ryan · 2001 [cited by applicant]
US 6317252B1 · Vahala et al. · 2001 [cited by applicant]
US 6317352B1 · Halbert et al. · 2001 [cited by applicant]
US 6321282B1 · Horowitz et al. · 2001 [cited by applicant]
US 6327205B1 · Haq · 2001 [cited by applicant]
US 6330667B1 · Klein · 2001 [cited by applicant]
US 6330687B1 · Griffith · 2001 [cited by applicant]
US 6345321B1 · Litaize et al. · 2002 [cited by applicant]
US 6349051B1 · Klein · 2002 [cited by applicant]
US 6369605B1 · Bonella et al. · 2002 [cited by applicant]
US 6370668B1 · Garrett, Jr. · 2002 [cited by examiner]
US 6401167B1 · Barth et al. · 2002 [cited by applicant]
US 6408402B1 · Norman · 2002 [cited by applicant]
US 6414868B1 · Wong et al. · 2002 [cited by applicant]
US 6414899B2 · Afghahi et al. · 2002 [cited by applicant]
US 6414904B2 · So · 2002 [cited by applicant]
US 6425064B2 · Soderquist · 2002 [cited by applicant]
US 6434035B2 · Miersch et al. · 2002 [cited by applicant]
US 6442057B1 · Song et al. · 2002 [cited by applicant]
US 6442644B1 · Gustavson et al. · 2002 [cited by applicant]
US 6442742B1 · Sugibayashi · 2002 [cited by applicant]
US 6446158B1 · Karabatsos · 2002 [cited by applicant]
US 6449213B1 · Dodd et al. · 2002 [cited by applicant]
US 6449679B2 · Ryan · 2002 [cited by applicant]
US 6449703B2 · Jeddeloh · 2002 [cited by applicant]
US 6449727B1 · Toda · 2002 [cited by applicant]
US 6466496B2 · Kuge · 2002 [cited by applicant]
US 6477592B1 · Chen et al. · 2002 [cited by applicant]
US 6477614B1 · Leddige et al. · 2002 [cited by applicant]
US 6480409B2 · Park et al. · 2002 [cited by applicant]
US 6480927B1 · Bauman · 2002 [cited by applicant]
US 6487102B1 · Halbert et al. · 2002 [cited by applicant]
US 6493250B2 · Halbert et al. · 2002 [cited by applicant]
US 6502161B1 · Perego et al. · 2002 [cited by applicant]
US 6510503B2 · Gillingham et al. · 2003 [cited by applicant]
US 6510506B2 · Nagapudi et al. · 2003 [cited by applicant]
US 6513080B1 · Haq · 2003 [cited by applicant]
US 6513091B1 · Blackmon et al. · 2003 [cited by applicant]
US 6516365B2 · Horowitz et al. · 2003 [cited by applicant]
US 6526469B1 · Drehmel et al. · 2003 [cited by applicant]
US 6530006B1 · Dodd et al. · 2003 [cited by applicant]
US 6530033B1 · Raynham et al. · 2003 [cited by applicant]
US 6553450B1 · Dodd et al. · 2003 [cited by applicant]
US 6557069B1 · Drehmel et al. · 2003 [cited by applicant]
US 6587912B2 · Leddige et al. · 2003 [cited by applicant]
US 6604180B2 · Jeddeloh · 2003 [cited by applicant]
US 6622224B1 · Cloud · 2003 [cited by applicant]
US 6625687B1 · Halbert et al. · 2003 [cited by applicant]
US 6633947B1 · Holman et al. · 2003 [cited by applicant]
US 6639820B1 · Khandekar et al. · 2003 [cited by applicant]
US 6643752B1 · Donnelly et al. · 2003 [cited by applicant]
US 6684263B2 · Horowitz et al. · 2004 [cited by applicant]
US 6690191B2 · Wu et al. · 2004 [cited by applicant]
US 6690726B1 · Yavits et al. · 2004 [cited by applicant]
US 6701446B2 · Tsern et al. · 2004 [cited by applicant]
US 6708248B1 · Garrett, Jr. et al. · 2004 [cited by applicant]
US 6714433B2 · Doblar et al. · 2004 [cited by applicant]
US 6720643B1 · Fox et al. · 2004 [cited by applicant]
US 6742098B1 · Halbert et al. · 2004 [cited by applicant]
US 6754117B2 · Jeddeloh · 2004 [cited by applicant]
US 6759884B2 · Tomita · 2004 [cited by applicant]
US 6820163B1 · McCall et al. · 2004 [cited by applicant]
US 6842864B1 · Barth et al. · 2005 [cited by applicant]
US 6853938B2 · Jeddeloh · 2005 [cited by applicant]
US 6854042B1 · Karabatsos · 2005 [cited by applicant]
US 6864524B2 · Masleid et al. · 2005 [cited by applicant]
US 6877079B2 · Yoo et al. · 2005 [cited by applicant]
US 6889284B1 · Nizar et al. · 2005 [cited by applicant]
US 6968419B1 · Holman · 2005 [cited by applicant]
US 6970968B1 · Holman · 2005 [cited by applicant]
US 7007130B1 · Holman · 2006 [cited by applicant]
US 7010629B1 · Frame et al. · 2006 [cited by applicant]
US 7010642B2 · Perego et al. · 2006 [cited by applicant]
US 7038956B2 · Beer · 2006 [cited by applicant]
US 7110400B2 · Hronik · 2006 [cited by applicant]
US 7123497B2 · Matsui et al. · 2006 [cited by applicant]
US 7127022B1 · Dieguez · 2006 [cited by applicant]
US 7254075B2 · Woo et al. · 2007 [cited by applicant]
US 7275189B2 · Ruckerbauer et al. · 2007 [cited by applicant]
US 7320047B2 · Perego et al. · 2008 [cited by applicant]
US 7321997B2 · Zimmerman et al. · 2008 [cited by applicant]
US 7339840B2 · Wallner et al. · 2008 [cited by applicant]
US 7404050B2 · Gregorius · 2008 [cited by applicant]
US 7519894B2 · WeiB et al. · 2009 [cited by applicant]
US 7523244B2 · Liaw et al. · 2009 [cited by applicant]
US 7615857B1 · Jouppi · 2009 [cited by applicant]
US 7949931B2 · Lastras-Montano · 2011 [cited by applicant]
US 8060774B2 · Smith et al. · 2011 [cited by applicant]
US 9865329B2 · Shaeffer et al. · 2018 [cited by applicant]
US 10381067B2 · Shaeffer et al. · 2019 [cited by applicant]
US 10672458B1 · Shaeffer et al. · 2020 [cited by applicant]
US 11043258B2 · Shaeffer · 2021 [cited by examiner]
US 11328764B2 · Shaeffer · 2022 [cited by examiner]
US 11727982B2 · Shaeffer · 2023 [cited by examiner]
US 20010000693A1 · Hamamoto et al. · 2001 [cited by applicant]
US 20010009531A1 · Farmwald · 2001 [cited by examiner]
US 20010039606A1 · Jeddeloh · 2001 [cited by applicant]
US 20010048616A1 · Ayukawa et al. · 2001 [cited by applicant]
US 20020024833A1 · Song et al. · 2002 [cited by applicant]
US 20020024834A1 · Jeon et al. · 2002 [cited by applicant]
US 20020083287A1 · Zumkehr et al. · 2002 [cited by applicant]
US 20020112119A1 · Halbert et al. · 2002 [cited by applicant]
US 20020124153A1 · Litaize et al. · 2002 [cited by applicant]
US 20020124203A1 · Fang · 2002 [cited by applicant]
US 20020129215A1 · Yoo et al. · 2002 [cited by applicant]
US 20020135394A1 · Ahn et al. · 2002 [cited by applicant]
US 20020144071A1 · Williams et al. · 2002 [cited by applicant]
US 20020184462A1 · Jeddeloh · 2002 [cited by applicant]
US 20030012229A1 · Braun · 2003 [cited by applicant]
US 20030018880A1 · Litaize et al. · 2003 [cited by applicant]
US 20030043613A1 · Doblar et al. · 2003 [cited by applicant]
US 20030074490A1 · Pochmuller · 2003 [cited by applicant]
US 20030090879A1 · Doblar et al. · 2003 [cited by applicant]
US 20030120895A1 · Litaize et al. · 2003 [cited by applicant]
US 20030177313A1 · Iyer et al. · 2003 [cited by applicant]
US 20030204783A1 · Kuroda · 2003 [cited by applicant]
US 20040015650A1 · Zumkehr et al. · 2004 [cited by applicant]
US 20040034825A1 · Jeddeloh · 2004 [cited by applicant]
US 20040049720A1 · Boehler · 2004 [cited by applicant]
US 20040085795A1 · Braun et al. · 2004 [cited by applicant]
US 20040095838A1 · Li · 2004 [cited by applicant]
US 20040105292A1 · Matsui · 2004 [cited by applicant]
US 20040125666A1 · Lee et al. · 2004 [cited by applicant]
US 20040133736A1 · Kyung · 2004 [cited by applicant]
US 20040143773A1 · Chen · 2004 [cited by applicant]
US 20040145935A1 · Jakobs · 2004 [cited by applicant]
US 20040148482A1 · Grundy · 2004 [cited by examiner]
US 20040150024A1 · Mazoyer et al. · 2004 [cited by applicant]
US 20040151038A1 · Ruckerbauer et al. · 2004 [cited by applicant]
US 20040164334A1 · Masleid et al. · 2004 [cited by applicant]
US 20040221106A1 · Perego et al. · 2004 [cited by applicant]
US 20040246767A1 · Vogt · 2004 [cited by applicant]
US 20040246785A1 · Vogt · 2004 [cited by applicant]
US 20040246786A1 · Vogt · 2004 [cited by applicant]
US 20040250024A1 · Vogt · 2004 [cited by applicant]
US 20040250153A1 · Vogt · 2004 [cited by applicant]
US 20040250181A1 · Vogt et al. · 2004 [cited by applicant]
US 20040256638A1 · Perego · 2004 [cited by examiner]
US 20040257847A1 · Matsui et al. · 2004 [cited by applicant]
US 20040260991A1 · Vogt et al. · 2004 [cited by applicant]
US 20040267481A1 · Resnick et al. · 2004 [cited by applicant]
US 20050108469A1 · Freeman et al. · 2005 [cited by applicant]
US 20050236703A1 · Kazi et al. · 2005 [cited by applicant]
US 20060095592A1 · Borkenhagen · 2006 [cited by applicant]
US 20070070669A1 · Tsern · 2007 [cited by applicant]
US 20080082763A1 · Rajan et al. · 2008 [cited by applicant]
US 20080093726A1 · Preda · 2008 [cited by examiner]
US 20080294838A1 · Houston et al. · 2008 [cited by applicant]
US 20090168525A1 · Olbrich et al. · 2009 [cited by applicant]
US 20090198924A1 · Tsern et al. · 2009 [cited by applicant]
US 20090321893A1 · Somasekhar et al. · 2009 [cited by applicant]
US 20100074038A1 · Ruckerbauer et al. · 2010 [cited by applicant]
US 20100217915A1 · O'Connor et al. · 2010 [cited by applicant]
US 20110090004A1 · Schuetz · 2011 [cited by examiner]
US 20110194326A1 · Nakanishi et al. · 2011 [cited by applicant]
CN 1540665 · 2004 [cited by applicant]
CN 1577633 · 2005 [cited by applicant]
DE 10208726 · 2010 [cited by applicant]
EP 0198429 · 1986 [cited by applicant]
EP 0282070A2 · 1988 [cited by applicant]
EP 0811916A2 · 1997 [cited by applicant]
EP 0813204A2 · 1997 [cited by applicant]
EP 0947070 · 1999 [cited by applicant]
EP 1069509A2 · 2001 [cited by applicant]
GB 2383656 · 2003 [cited by applicant]
JP 04186599 · 1992 [cited by applicant]
JP 10207785 · 1998 [cited by applicant]
JP 10207786 · 1998 [cited by applicant]
JP 11297092 · 1999 [cited by applicant]
JP 11317503 · 1999 [cited by applicant]
JP 2000030487 · 2000 [cited by applicant]
JP 2000040035 · 2000 [cited by applicant]
JP 2002064145 · 2002 [cited by applicant]
JP 2003324155 · 2003 [cited by applicant]
JP 2004055100 · 2004 [cited by applicant]
JP 2004139552A2 · 2004 [cited by applicant]
JP 2004327474 · 2004 [cited by applicant]
JP 2006302129 · 2006 [cited by applicant]
WO WO1998012637 · 1998 [cited by applicant]
WO WO1999030240A1 · 1999 [cited by applicant]
WO WO9941666A1 · 1999 [cited by applicant]
WO WO1999041667A1 · 1999 [cited by applicant]
WO WO2002025454A2 · 2002 [cited by applicant]
WO WO2004025663 · 2004 [cited by applicant]
WO WO2004111856 · 2004 [cited by applicant]
WO WO2005066965 · 2005 [cited by applicant]
WO WO2007028109A2 · 2007 [cited by applicant]
WO WO2007038225 · 2007 [cited by applicant]
“Draft Standard for a High-Speed Memory Interface (SyncLink),” Draft 0.99 IEEE P1596.7-199X, pp. 1-56 (1996), Microprocessor and Microcomputer Standards Subcommittee of the IEEE Computer Society. 66 pages. [cited by applicant]
“Intel 82804AA Memory Repeater Hub for SDRAM (MRH-S)”, Datasheet, Intel Corp., pp. 1-48 (Nov. 1999). [cited by applicant]
“Intel 82805AA Memory Translator Hub (MTH) Datasheet”, Intel Corp., pp. 1-48 (Nov. 1999). 48 pages. [cited by applicant]
“Inter Partes Reexamination Communication,” issued in U.S. Appl. No. 95/000,166, mail date (from USPTO) Oct. 19, 2007, 23 pages. [cited by applicant]
“Order Granting/Denying Request for Inter Partes Reexamination,” issued in U.S. Appl. No. 95/000,183, mail date (from USPTO) Oct. 19, 2007, 21 pages. [cited by applicant]
“SLDRAM 400 Mb/s/pin Command/Address Repeater”, SLD10400 Rev. 5, SLDRAM Consortium, pp. 1-12, (Jan. 7, 1998). [cited by applicant]
*Intel Developer Forum, “DDR2 Memory In 2004 Servers—Recipes For Successful Designs”, Sep. 2003. 33 pages. [cited by applicant]
Allan, Graham, “DDR SDRAM/SGRAM: An Interpretation of the JEDEC Standard,” MOSAID Technologies Inc., Sep. 25, 1998. 73 pages. [cited by applicant]
AMD letter entitled “Re: Patent and Patent Applications Declaration Concerning Fully Buffered DIMMs,” dated Apr. 12, 2004, referenced in Excel Spreadsheet, entitled “Patents.xls.” 1 page. [cited by applicant]
Cataldo, A., “TI Fields DSP-Based Media Processor on a DIMM”, EE Times (Jan. 2000). 2 pages. [cited by applicant]
Chakraborty, Kanad, “BISRAMGEN: A Silicon Compiler For Built-In Self-Repairable Random-Access Memories,” University of Michigan, The Sciences and Engineering, vol. 58-02B, 1997. 145 pages. [cited by applicant]
Chinese Office Action dated Nov. 6, 2009, The Patent Office of the People's Republic of China, Chinese Patent Application No. 200680041998.3 filed Sep. 21, 2006. 10 pages. [cited by applicant]
CN First Office Action dated Mar. 19, 2012 re CN Application No. 200880016745.X. 25 pages. [cited by applicant]
CN First Office Action with mail date of Nov. 6, 2009 re CN Application No. 200680041998.3. 10 pages. [cited by applicant]
CN Office Action dated Apr. 2, 2011 re CN Application No. 201010184674.3. 34 Pages. [cited by applicant]
CN Office Action dated Jan. 29, 2012 in CN Application No. 200680041998.3, Includes English Translation. 30 pages. [cited by applicant]
CN Office Action dated Oct. 26, 2011 in CN Application No. 200680041998.3. 3 pages. [cited by applicant]
CN Rejection Decision dated Jan. 29, 2012 re CN Application No. 200680041998.3. 30 pages. [cited by applicant]
CN Response dated Aug. 16, 2011 to the Third Office Action dated Jun. 9, 2011 re CN Application No. 200680041998.3. 4 Pages. [cited by applicant]
CN Response dated Aug. 17, 2011 to the Office Action dated Apr. 2, 2011 re CN Application No. 201010184674.3. 19 Pages. [cited by applicant]
CN Response dated Jun. 25, 2012 to the Third Office Action dated Apr. 12, 2012 in CN Application No. 201010184674.3. 19 pages. [cited by applicant]
CN Response dated May 20, 2010 re CN Application No. 200680041993.3 no translation. 20 Pages. [cited by applicant]
CN Response submitted on Mar. 21, 2011 to the Second Office Action of Jan. 7, 2011 re CN Application No. 200680041998.3. 26 pages. [cited by applicant]
CN Response to Office Action dated May 20, 2010, Chinese Patent Application No. 200680041998.3 Filed Sep. 21, 2006. 20 Pages. [cited by applicant]
CN Second Office Action dated Jan. 7, 2011 re CN Application No. 200680041998.3. 22 Pages. [cited by applicant]
CN Second Office Action dated Oct. 26, 2011 re CN Application No. 201010184674.3. 8 Pages. [cited by applicant]
CN Third Office Action dated Apr. 12, 2012 re CN Application No. 201010184674.3. 6 pages. [cited by applicant]
CN Third Office Action dated Jun. 9, 2011 re CN Application No. 200680041998.3. 27 Pages. [cited by applicant]
Communication from European Patent Office dated Mar. 9, 2007 in EP Application No. 05001739.8-2210. 4 pages. [cited by applicant]
David, Howard Intel Developer Forum, “Fully Buffered Dimm (FB-DIMM) Design Considerations”, Feb. 18, 2004. 37 pages. [cited by applicant]
Doettling et al., “S/390 Parallel Enterprise Server Generation 3: A Balanced System and Cache Structure,” IBM J. Res. Develop., vol. 41 (No. 4/5), Jul./Sep. 1997, pp. 405-428. 24 pages. [cited by applicant]
EP Office Action dated Jul. 6, 2012 in EP Application No. 06815141.4-2210. 5 pages. [cited by applicant]
EP Office Action dated Sep. 17, 2010, EP Patent Application No. 06815141.4, filed Sep. 2006. 5 Pages. [cited by applicant]
EP Office Communication pursuant to Article 94(3) EPC, dated Sep. 17, 2010, in EP Application No. 06815141.4 - 2210. 5 pages. [cited by applicant]
EP Response dated Feb. 2, 2011 to the Official Communication of Sep. 17, 2010 re EP Application No. 06815141.4 20 Pages. [cited by applicant]
EP Search Report dated May 18, 2006 re EP Application No. 05001769.8. 3 Pages. [cited by applicant]
Excel Spreadsheet, entitled “Patents and Patent Applications that May be Related to FB-DIMM,” available at “http://www.jedec.org/download/search/FBDIMM/patents.xls,” Jan. 23, 2006. 2 pages. [cited by applicant]
Exhibit AH, Tab 1—In the matter of Rambus, Inc., FTC Docket No. 9302, Opinion of the Commission, re Request for Inter Partes Reexamination of U.S. Pat. No. 6,426,916, Aug. 2, 2006 (date shown on page from FTC website fo… [cited by applicant]
Expert Report of Robert J. Murphy Regarding Patent Validity, dated Apr. 13, 2005, from Hynix Semiconductor Inc. et al. v. Rambus Inc., No. 00-20905 RMW (N.D. Cal.) 112 pages. [cited by applicant]
Extended European Search Report, dated Apr. 13, 2006, from European Application No. 05 02 6720. 7 pages. [cited by applicant]
Extended European Search Report, dated Aug. 24, 2007, from European Application No. 06 12 5946. 4 pages. [cited by applicant]
Extended European Search Report, dated Aug. 6, 2007, from European Application No. 06 12 5958.6. 4 pages. [cited by applicant]
Extended European Search Report, dated Jul. 18, 2007, from European Application No. 06 12 5954.5. 4 pages. [cited by applicant]
Farmwald, M. et al., (Rambus Inc.) “A fast path to one memory,” IEEE Spectrum, Oct. 1992, pp. 50-51. 2 pages. [cited by applicant]
Gibson, Jerry D., Editor-in-Chief, “The Mobile Communications Handbook,” copyright 1996 CRC Press, Inc., p. 24. 3 pages. [cited by applicant]
Gillingham et al., “SLDRAM: High Performance Open-Standard Memory,” IEEE Micro, Nov./Dec. 1997, pp. 29-39, vol. 17, No. 6, Institute of Electrical and Electronics Engineers, Inc., Los Alamitos, California. 11 pages. [cited by applicant]
Gillingham, Peter, “SLDRAM Architectural and Functional Overview,” SLDRAM Consortium, Aug. 29, 1997, pp. 1-14. 14 pages. [cited by applicant]
Gjessing, S. et al., “A RAM link for high speed”, IEEE Spectrum, Oct. 1992, pp. 52-53. [cited by applicant]
Graham Allan, MOSAID Technologies Inc., “DDR SDRAM/SGRAM An Interpretation of the JEDEC Standard”, Sep. 25, 1998 72 pages. [cited by applicant]
Gustavson et al., “The Scalable Coherent Interface Project (Superbus),” SCI Aug. 22, 1988, Draft, Rev. 14. 16 pages. [cited by applicant]
Gustavson, David B., “Scalable Coherent Interface”, Nov. 28, 1988, Invited paper presented at COMPCON Spring 89, San Francisco, CA, IEEE pp. 536-538, Feb. 24-Mar. 3, 1989. 3 pages. [cited by applicant]
Gustavson, David B., P1596: SCI, A Scalable Coherent Interface Bus Specification Components (Nov. 28, 1988). 3 pages. [cited by applicant]
Gustavson, David et al., “Macintosh HD: Desktop Folder: SLDRAMrepeaterConcerns”, Sunday, Nov. 23, 1997, 4 pages. [cited by applicant]
Herriot, J., “Software is the Key to Wafer-Scale RAM,” High Performance Systems, vol. 11, No. 1, Jan. 1990, pp. 36-37. [cited by applicant]
Hynix's Motion for Leave to File Motion for Partial Reconsideration of Claim Construction and Summary Judgment Orders, dated Aug. 5, 2005, from Hynix Semiconductor Inc. et al. v. Rambus Inc., No. 00-20905 RMW (N.D. Cal.… [cited by applicant]
Hynix's Motion for Reconsideration of Construction of “Device” and Related Summary Judgment Orders, dated Oct. 18, 2005, from Hynix Semiconductor Inc. et al. v. Rambus Inc., No. 00-20905 RMW (N.D. Cal.) 31 pages. [cited by applicant]
Hynix's Opposition to Rambus's Motion for Summary Judgment of Infringement by Hynix's Counterclaim Products, dated Nov. 2, 2007, from Rambus Inc. v. Hynix Semiconductor Inc. et al., No. 05-00334 RMW (N.D. Cal.) 16 pages. [cited by applicant]
Hynix's Reply in Support of its Motion for Reconsideration of Construction of “Device” and Related Summary Judgment Orders, dated Nov. 7, 2005, from Hynix Semiconductor Inc. et al. v. Rambus Inc., No. 00-20905 RMW (N.D.… [cited by applicant]
Hynix's Reply Re: Motion For A New Trial On Invalidity Based On Prior Art, dated Jun. 27, 2006, Case No. CV 00-20905 RMW. 8 pages. [cited by applicant]
Hynix's Supplemental Brief in Support of its Motion for New Trial in Invalidity (KSR), dated Jul. 6, 2007, from Hynix Semiconductor Inc. et al. v. Rambus Inc., No. 00-20905 RMW (N.D. Cal.). 13 pages. [cited by applicant]
IBM, “184 Pin DIMM Design Updates/Ramifications for Unbuffered and Registered DDR DIMMs,” JC-42.5, Dec. 1999, pp. 1-12. 13 pages. [cited by applicant]
IBM, “Application Note DDR SDRAM Module Serial Presence Detect Definitions”, Oct. 1999, pp. 1-34. 35 pages. [cited by applicant]
IBM, Micron Technology and Reliance Computer Corporation, “DDR SDRAM Registered DIMM,” Design Specification, Revision 0.6, Nov. 1999. 62 pages. [cited by applicant]
IEEE Standard for Scalable Coherent Interface (SCI), “Microprocessor and Microcomputer Standards Subcommittee of the IEEE Computer Society,” IEEE Std. 1596-1992, Aug. 2, 1993. 270 pages. [cited by applicant]
Inphi letter entitled “Re: License assurance for patents and applications essential to Fully Buffered DIMM proposal,” dated Mar. 3, 2005, referenced in Excel Spreadsheet, entitled “Patents.xls.” 1 page. [cited by applicant]
Inphi letter entitled “Re: License assurance for patents relavent to FBDIMM,” dated Jun. 6, 2005, referenced in Excel Spreadsheet, entitled “Patents.xls.” 1 page. [cited by applicant]
Institue of Electrical and Electronics Engineers, “802.3ab—A Tutorial Presentation,” Slides, Mar. 1998. 63 pages DUPLICATE. [cited by applicant]
Intel Developer Forum, “Fully Buffered DIMM (FB-DIMM) Server Memory Architecture: Capacity, Perfomance, Reliability, and Longevity”, Feb. 18, 2004. 106 pages. [cited by applicant]
Interlocutory Decision in Opposition Proceedings, dated Nov. 27, 2002, from European Patent No. EP 0 525 068. 38 pages. [cited by applicant]
International Preliminary Report dated Oct. 15, 2009, Patent Cooperation Treaty; International Application No. PCT/US2008/059268 filed Apr. 3, 2008. 11 pages. [cited by applicant]
International Search Report & The Written Opinion of the International Searching Authority, Patent Cooperation Treaty, Application No. PCT/US2008/059268 filed on Apr. 3, 2008, mailing date of Sep. 23, 2008. 13 pages. [cited by applicant]
International Search Report and Written Opinion dated May 2, 2007 in International Application No. PCT/US2006/036894. 15 pages. [cited by applicant]
International Search Report in PCT/US05/17066, mailed Nov. 2, 2005. 2 pages. [cited by applicant]
James, David V., “Scalable I/O Architecture for Buses,” COMPCON Spring 1989, SCI, Nov. 28, 1988. 7 pages. [cited by applicant]
JC-42.3 Task Group Minutes, “Meeting On Synchronous DRAM Ballots,” Las Vegas, Nevada, Jan. 21, 1993. 19 pages. [cited by applicant]
Jeddeloh, Joe, “Fully Buffered DIMM (FB-DIMM),” Advanced Systems Technology, Micron Technology, Inc. Apr. 15-16, 2004. 32 pages. [cited by applicant]
JEDEC Standard No. 21-C, pp. 4.20-4-1 through 4.20.4-69, 4.20.4-184 Pin, PC1600/2100 DDR SDRAM Registered DIMM Design Specification, Revision 1.2, Feb. 2002. 68 pages. [cited by applicant]
JEDEC Standard—“FBDIMM Specification: High Speed Differential PTP Link at 1.5V, ”JESD8-18, Sep. 2006, available at “http://www.jedec.org/download/search/JESD8-18.pdf”. 60 pages. [cited by applicant]
John, Lizy Kurian, “VaWiRAM: A Variable Width Random Access Memory Module,” 1995 IEEE, 9th International Conference on VLSI Design—1996. pp. 219-224. 6 pages. [cited by applicant]
Johnson, B., “Direct RDRAM Basic Architecture and Program Overview”, Intel Developer Forum, pp. 1-14, (Sep. 1998). 28 pages. [cited by applicant]
Johnson, Dave et al., “Intel iAPX 432-VLSI Building Blocks for a Fault-Tolerant Computer,” AFIPS Conference Proceedings, 1983 National Computer Conference, pp. 531-537 (May 16-19, 1983). 9 pages. [cited by applicant]
Joint Claim Construction and Prehearing Statement Pursuant to Patent Local Rule 4-3, dated Jul. 11, 2007, from Rambus Inc. v. Micron Technology, Inc. et al., No. 06-00244 RMW (N.D. Cal.) 233 pages. [cited by applicant]
Jones, F. (United Memories, Inc.) “A new era of fast dynamic RAMs”, IEEE Spectrum, Oct. 1992, pp. 43-49. [cited by applicant]
JP Office Action dated Dec. 27, 2011 in JP Application No. 2008-532397. 6 pages. [cited by applicant]
JP Office Action dated Jul. 11, 2012 in JP Application No. 2008-532397. 6 pages. [cited by applicant]
JP Office Action dated Jul. 6, 2012 in JP Application No. 2010-502293. 4 pages. [cited by applicant]
JP Office Action dated Mar. 13, 2012 re JP Application No. 2010-502293. 6 pages. [cited by applicant]
JP Response dated Jun. 12, 2012 for JP Application No. 2010-502293 and English Translations of JP Argument and Amendment. 17 pages. [cited by applicant]
Karabatsos, C., “Quad Band Memory (QBM) Technology”, Kentron Technologies, Inc., Apr. 2001. 5 pages. [cited by applicant]
Kentron letter entitled “Re: License Assurance,” dated Jan. 23, 2006, referenced in Excel Spreadsheet, entitled “Patents.xls.” 1 page. [cited by applicant]
Kentron Technologies, Inc., “Quad Band Memory (QBM), ” “The ‘QBM Enabled’ Via PT880/PM880 Chipset Solutions with the Fastest Memory,” published Jul. 21, 2003. 12 pages. [cited by applicant]
Kentron Technologies, Inc., Quad Band Memory Providing High Performance DDRI & II Based Memory Solutions, Apr. 15, 2004, JEDEX San Jose. 22 Pages. [cited by applicant]
Kristiansen et al., “Scalable Coherent Interface,” Feb. 1989. 8 pages. [cited by applicant]
Kristiansen, E.H., Alnes, Knut, Bakka, Bjorn O, and Jenssen, Mant, “Scalable Coherent Interface,” to appear in Eurobus Conference Proceedings, May 1989. 9 pages. [cited by applicant]
Kyeong-Sik Min, et al., “A Post-Package Bit-Repair Scheme Using Static Latches With Bipolar-Voltage Programmable Antifuse Circuit for High-Density DRAMs,” IEEE Symposium on VLSI Circuits, Digest of Technical Papers, Jun… [cited by applicant]
Lines et al., “High Speed Circuit Techniques in a 150Mhz 64M SDRAM,” Proceedings of Memory Technology, Design & Testing International Workshop, San Jose, CA, Aug. 11, 1997, pp. 8-11. 4 pages. [cited by applicant]