Solid-state imaging device, method of manufacturing the same, and electronic apparatus
A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit.
1 . A light detecting device comprising:
a substrate having a first surface and a second surface;
a first photoelectric conversion layer disposed in the substrate;
a second photoelectric conversion layer disposed above the substrate; and
a first conductive plug disposed through the substrate, wherein at least a portion of the first conductive plug is a same height as the first photoelectric conversion layer in a cross-sectional view, and wherein the first conductive plug is connected to a first lower electrode of the second photoelectric conversion layer.
2 . The light detecting device according to claim 1 , wherein the second photoelectric conversion layer comprises an upper electrode, a photoelectric conversion material layer and the first lower electrode.
3 . The light detecting device according to claim 1 , wherein a signal charge in the second photoelectric conversion layer is transferred via the first conductive plug.
4 . The light detecting device according to claim 2 , wherein the first lower electrode is insulated from a second lower electrode, and wherein the upper electrode overlaps the first lower electrode and the second lower electrode.
5 . The light detecting device according to claim 4 , wherein the second lower electrode is electrically connected to a second conductive plug disposed through the substrate.
6 . The light detecting device according to claim 1 , wherein the first conductive plug comprises a metal material or a semiconductor material.
7 . The light detecting device according to claim 1 , wherein the first photoelectric conversion layer comprises an inorganic photoelectric conversion layer having a PN junction.
8 . The light detecting device according to claim 1 , further comprising:
an insulating layer between a first lower electrode and the first surface of the substrate.
9 . The light detecting device according to claim 8 , wherein the insulating layer comprises a metal oxide material.
10 . The light detecting device according to claim 1 , further comprising:
a first transfer transistor corresponding to the second photoelectric conversion layer, wherein the first transfer transistor is disposed above the first surface of the substrate.
11 . The light detecting device according to claim 1 , further comprising:
a circuit disposed on a side of the second surface of the substrate opposite to a light incident surface.
12 . The light detecting device according to claim 2 , wherein the photoelectric conversion material layer comprises an organic material.
13 . The light detecting device according to claim 4 , wherein the first lower electrode corresponds to a first pixel, and the second lower electrode corresponds to a second pixel.
14 . The light detecting device according to claim 1 further comprising:
a third photoelectric conversion layer disposed in the substrate; and
a fourth photoelectric conversion layer disposed above the substrate, wherein the fourth photoelectric conversion layer is electrically connected to a second conductive plug disposed through the substrate.
15 . The light detecting device according to claim 1 , further comprising:
a first amplification transistor corresponding to the second photoelectric conversion layer, wherein the first amplification transistor is disposed on a side of the second surface of the substrate opposite to a light incident surface.
16 . The light detecting device according to claim 1 , wherein the first photoelectric conversion layer absorbs a first wavelength range, the second photoelectric conversion layer absorbs a second wavelength range, and the first wavelength range and the second wavelength range are different.
17 . The light detecting device according to claim 16 , further comprising:
a second amplification transistor corresponding to the first photoelectric conversion layer, wherein the second amplification transistor is disposed on a side of the second surface of the substrate opposite to a light incident surface.
18 . The light detecting device according to claim 16 , further comprising:
a planarization layer disposed above the second photoelectric conversion layer.
19 . An electronic apparatus comprising:
an optical system;
a light detecting device; and
a signal processing circuit processing an output signal of the light detecting device, wherein the light detecting device comprises:
a substrate having a first surface and a second surface;
a first photoelectric conversion layer disposed in the substrate;
a second photoelectric conversion layer disposed above the substrate; and,
a first conductive plug disposed through the substrate, wherein at least a portion of the first conductive plug is a same height as the first photoelectric conversion layer in a cross-sectional view, and wherein the first conductive plug is connected to a first lower electrode of the second photoelectric conversion layer.