Die sidewall coatings and related methods
Various implementations of a method of forming a semiconductor package may include forming a plurality of notches into the first side of a semiconductor substrate; applying a permanent coating material into the plurality of notches; forming a first organic material over the first side of the semiconductor substrate and the plurality of notches; thinning a second side of the semiconductor substrate opposite the first side one of to or into the plurality of notches; and singulating the semiconductor substrate through the permanent coating material into a plurality of semiconductor packages.
1. A method of forming a semiconductor package, the method comprising:
forming a plurality of notches into a first side of a semiconductor substrate;
applying a coating material into the plurality of notches;
after applying the coating material, forming a first organic material over the first side of the semiconductor substrate and the plurality of notches; and
singulating the semiconductor substrate through the coating material into a plurality of semiconductor packages;
wherein the coating material comprises a thickness equal to a depth of the plurality of notches extending from the first side of the semiconductor substrate to a bottom of the plurality of notches.
2. The method of claim 1 , further comprising applying one of a second organic material or a backmetal over a second side of the semiconductor substrate opposite the first side of the semiconductor substrate.
3. The method of claim 1 , wherein a perimeter of each of a plurality of semiconductor die comprised in the semiconductor substrate each comprises a closed shape.
4. The method of claim 1 , wherein only a plurality of sidewalls of the semiconductor substrate after singulation are directly coupled to the coating material.
5. The method of claim 1 , further comprising singulating the semiconductor substrate through the first organic material.
6. The method of claim 1 , wherein the first organic material comprises a die support structure that comprises two or more layers.
7. A method of forming a semiconductor package, the method comprising:
forming a plurality of notches into a first side of a semiconductor substrate;
applying a coating material into the plurality of notches;
after applying the coating material, forming a first organic material over the first side of the semiconductor substrate and the plurality of notches; and
singulating the semiconductor substrate through the coating material and the first organic material into a plurality of semiconductor packages;
wherein a thickness of the coating material of a semiconductor package of the plurality of semiconductor packages is equal to a thickness of a die of the semiconductor package.
8. The method of claim 7 further comprising applying one of a second organic material or a backmetal over a second side of the semiconductor substrate opposite the first side of the semiconductor substrate.
9. The method of claim 7 , a perimeter of each of a plurality of semiconductor die comprised in the semiconductor substrate each comprises a closed shape.
10. The method of claim 7 , wherein forming a first organic material over the first side of the semiconductor substrate further comprises forming a permanent die support structure comprising a perimeter comprising a closed shape.
11. The method of claim 10 , further comprising forming one of a second permanent die support structure or a temporary die support structure coupled to a second side of the semiconductor substrate.
12. The method of claim 10 , wherein the permanent die support structure comprises two or more layers.
13. The method of claim 7 , further comprising forming a second plurality of notches within the plurality of notches, wherein a width of the second plurality of notches is less than a width of the plurality of notches.
14. A method of forming a semiconductor package, the method comprising:
forming a plurality of notches into a first side of a semiconductor substrate;
applying a coating material into the plurality of notches;
after applying the coating material, forming a first organic material over the first side of the semiconductor substrate and the plurality of notches; and
singulating the semiconductor substrate through the coating material and the first organic material into a plurality of semiconductor packages;
wherein the coating material comprises a thickness equal to a depth of the plurality of notches extending from the first side of the semiconductor substrate to a bottom of the plurality of notches; and
wherein the plurality of semiconductor packages comprises a plurality of die, each die of the plurality of die comprising stepped sidewalls.
15. The method of claim 14 , further comprising applying one of a second organic material or a backmetal over the second side of the semiconductor substrate.
16. The method of claim 14 , wherein a perimeter of each of a plurality of semiconductor die comprised in the semiconductor substrate each comprises a closed shape.
17. The method of claim 14 , wherein forming a first organic material over the first side of the semiconductor substrate further comprises forming a permanent die support structure comprising a perimeter comprising a closed shape.
18. The method of claim 17 , further comprising forming one of a second permanent die support structure or a temporary die support structure coupled to the second side of the semiconductor substrate.
19. The method of claim 17 , wherein the permanent die support structure comprises two or more layers.
20. The method of claim 14 , wherein the first organic material is directly coupled to the first side of the semiconductor substrate.