CMP composition containing zirconia particles and method of use
The invention provides a chemical-mechanical polishing composition containing zirconia particles, a modifying agent that adheres to the zirconia particles, an organic acid, and water, as well as a method of using such a polishing composition to polish substrates and a method of using a polishing composition comprising zirconia particles, an organic acid, an oxidizing agent, and water to polishing substrates containing metal and oxide-based dielectric materials.
1. A chemical-mechanical polishing (CMP) composition comprising:
(a) zirconia particles, wherein the zirconia particles are present in the CMP composition at a concentration of about 0.01 wt % to about 5 wt %;
(b) a modifying agent that adheres to the zirconia particles, wherein the modifying agent comprises an aminosilane or a phosphonic acid;
(c) an organic acid comprising an amino acid; and
(d) water.
2. The CMP composition of claim 1 , wherein the organic acid is present in the CMP composition at a concentration of about 0.001 wt % to about 5 wt %.
3. The CMP composition of claim 1 , wherein the aminosilane is at least one of bis(trimethoxysilylpropyl)amine, aminopropyltrimethoxysilane, (N-methyl-3-aminopropyl)trimethoxysilane, (N,N-dimethyl-3-aminopropyl)trimethoxysilane, (N,N,N-trimethyl-3-aminopropyl)trimethoxysilane, N-(3-triethoxysilylpropyl)-4,5-dihydroimidaxole, and [3-(2-aminoethyl)aminopropyl]trimethoxysilane.
4. The CMP composition of claim 1 , wherein the modifying agent comprises an aminosilane and an aminoalkylphosphonic acid.
5. The CMP composition of claim 1 , wherein the modifying agent is present in the CMP composition at a concentration of about 0.001 wt % to about 5 wt %.
6. The CMP composition of claim 1 further comprising an oxidizing agent.
7. The CMP composition of claim 6 , wherein the oxidizing agent is a substance that oxidizes at least one of copper and tantalum.
8. The CMP composition of claim 6 , wherein the oxidizing agent is at least one of hydrogen peroxide, ammonium iodate, hydroxylamine, hydroxylpyridine, and ammonium persulfate.
9. The CMP composition of claim 6 , wherein the oxidizing agent is present in the CMP composition at a concentration of about 0.01 wt % to about 5 wt %.
10. The CMP composition of claim 1 further comprising about 0.01 wt % to about 5 wt % of a triazole.
11. The CMP composition of claim 1 , wherein the composition has a pH from about 3 to about 7.
12. A method of chemically-mechanically polishing a substrate, which method comprises:
(i) contacting a substrate with a polishing pad and the CMP composition of claim 1 ;
(ii) moving the polishing pad relative to the substrate with the CMP composition therebetween; and
(iii) abrading at least a portion of the substrate to polish the substrate.
13. The method of claim 12 , wherein the substrate comprises at least one layer of copper and at least one layer of a silicon dioxide-based dielectric, and at least a portion of the copper layer and at least a portion of the silicon dioxide-based dielectric layer are abraded to polish the substrate.