Semiconductor device including silicon carbide region containing oxygen
A semiconductor device of embodiments includes: a silicon carbide layer having a first face and a second face and including a first trench, a second trench having a distance of 100 nm or less from the first trench, a first silicon carbide region of n-type, a second silicon carbide region of p-type between the first trench and the second trench, a third silicon carbide region of n-type between the second silicon carbide region and the first face, a fourth silicon carbide region between the first trench and the second silicon carbide region and containing oxygen, and a fifth silicon carbide region between the second trench and the second silicon carbide region and containing oxygen; a first gate electrode in the first trench; a second gate electrode in the second trench; a first gate insulating layer; a second gate insulating layer; a first electrode; and a second electrode.
1. A semiconductor device, comprising:
a silicon carbide layer having a first face and a second face opposite to the first face and including:
a first trench provided on a side of the first face and extending in a first direction parallel to the first face;
a second trench provided on the side of the first face, extending in the first direction, and having a distance of 100 nm or less from the first trench in a second direction parallel to the first face and perpendicular to the first direction;
a first silicon carbide region of n-type;
a second silicon carbide region of p-type provided between the first silicon carbide region and the first face and provided between the first trench and the second trench;
a third silicon carbide region of n-type provided between the second silicon carbide region and the first face and provided between the first trench and the second trench;
a fourth silicon carbide region provided between the first trench and the second silicon carbide region and containing oxygen; and
a fifth silicon carbide region provided between the second trench and the second silicon carbide region and containing oxygen;
a first gate electrode provided in the first trench;
a second gate electrode provided in the second trench;
a first gate insulating layer provided between the first gate electrode and the silicon carbide layer;
a second gate insulating layer provided between the second gate electrode and the silicon carbide layer;
a first electrode provided on the side of the first face of the silicon carbide layer and electrically connected to the third silicon carbide region; and
a second electrode provided on a side of the second face of the silicon carbide layer,
wherein the fourth silicon carbide region contains an oxygen atom bonded to four silicon atoms, and
the fifth silicon carbide region contains an oxygen atom bonded to four silicon atoms.
2. The semiconductor device according to claim 1 ,
wherein the silicon carbide layer further includes:
a sixth silicon carbide region provided between the first trench and the first silicon carbide region and containing oxygen; and
a seventh silicon carbide region provided between the second trench and the first silicon carbide region and containing oxygen.
3. The semiconductor device according to claim 1 ,
wherein an oxygen concentration in the fourth silicon carbide region is equal to or more than 1×10 17 cm −3 and equal to or less than 1×10 23 cm −3 , and an oxygen concentration in the fifth silicon carbide region is equal to or more than 1×10 17 cm −3 and equal to or less than 1×10 23 cm −3 .
4. The semiconductor device according to claim 1 ,
wherein a concentration of oxygen atoms bonded to four silicon atoms in the fourth silicon carbide region is higher than a concentration of oxygen atoms bonded to two silicon atoms in the fourth silicon carbide region, and
a concentration of oxygen atoms bonded to four silicon atoms in the fifth silicon carbide region is higher than a concentration of oxygen atoms bonded to two silicon atoms in the fifth silicon carbide region.
5. The semiconductor device according to claim 1 ,
wherein a concentration of oxygen atoms bonded to four silicon atoms in the fourth silicon carbide region is higher than a concentration of oxygen atoms bonded to a carbon atom in the fourth silicon carbide region, and
a concentration of oxygen atoms bonded to four silicon atoms in the fifth silicon carbide region is higher than a concentration of oxygen atoms bonded to a carbon atom in the fifth silicon carbide region.
6. The semiconductor device according to claim 1 ,
wherein the fourth silicon carbide region is p-type, and the fifth silicon carbide region is p-type.
7. The semiconductor device according to claim 1 ,
wherein a width of the first trench in the second direction is larger than a distance between the first trench and the second trench in the second direction.
8. The semiconductor device according to claim 1 , further comprising:
a first gate electrode pad provided on the side of the first face of the silicon carbide layer and electrically connected to the first gate electrode; and
a second gate electrode pad provided on the side of the first face of the silicon carbide layer and electrically connected to the second gate electrode.
9. An inverter circuit comprising the semiconductor device according to claim 1 .
10. A drive device comprising the semiconductor device according to claim 1 .
11. A vehicle comprising the semiconductor device according to claim 1 .
12. An elevator comprising the semiconductor device according to claim 1 .
13. A semiconductor device, comprising:
a silicon carbide layer having a first face and a second face opposite to the first face and including:
a first trench provided on a side of the first face and extending in a first direction parallel to the first face;
a second trench provided on the side of the first face, extending in the first direction, and having a distance of 100 nm or less from the first trench in a second direction parallel to the first face and perpendicular to the first direction;
a first silicon carbide region of n-type;
a second silicon carbide region of p-type provided between the first silicon carbide region and the first face and provided between the first trench and the second trench;
a third silicon carbide region of n-type provided between the second silicon carbide region and the first face and provided between the first trench and the second trench;
a fourth silicon carbide region provided between the first trench and the second silicon carbide region and containing oxygen; and
a fifth silicon carbide region provided between the second trench and the second silicon carbide region and containing oxygen;
a first gate electrode provided in the first trench;
a second gate electrode provided in the second trench;
a first gate insulating layer provided between the first gate electrode and the silicon carbide layer:
a second gate insulating layer provided between the second gate electrode and the silicon carbide layer;
a first electrode provided on the side of the first face of the silicon carbide layer and electrically connected to the third silicon carbide region; and
a second electrode provided on a side of the second face of the silicon carbide layer,
wherein an oxygen concentration at a first position 20 nm away from an interface between the first gate insulating layer and the silicon carbide layer toward the silicon carbide layer is less than 1×10 17 cm −3 , and
an oxygen concentration at a second position 20 nm away from an interface between the second gate insulating layer and the silicon carbide layer toward the silicon carbide layer is less than 1×10 17 cm −3 .
14. A semiconductor device, comprising:
a silicon carbide layer having a first face and a second face opposite to the first face and including:
a first trench provided on a side of the first face and extending in a first direction parallel to the first face;
a second trench provided on the side of the first face, extending in the first direction, and having a distance of 100 nm or less from the first trench in a second direction parallel to the first face and perpendicular to the first direction;
a first silicon carbide region of n-type;
a second silicon carbide region of p-type provided between the first silicon carbide region and the first face and provided between the first trench and the second trench;
a third silicon carbide region of n-type provided between the second silicon carbide region and the first face and provided between the first trench and the second trench;
a fourth silicon carbide region provided between the first trench and the second silicon carbide region and containing oxygen; and
a fifth silicon carbide region provided between the second trench and the second silicon carbide region and containing oxygen;
a first gate electrode provided in the first trench;
a second gate electrode provided in the second trench;
a first gate insulating layer provided between the first gate electrode and the silicon carbide layer;
a second gate insulating layer provided between the second gate electrode and the silicon carbide layer;
a first electrode provided on the side of the first face of the silicon carbide layer and electrically connected to the third silicon carbide region; and
a second electrode provided on a side of the second face of the silicon carbide layer,
wherein the fourth silicon carbide region is p-type, and the fifth silicon carbide region is p-type,
wherein the fourth silicon carbide region contains aluminum, and an oxygen concentration in the fourth silicon carbide region is higher than an aluminum concentration in the fourth silicon carbide region, and
the fifth silicon carbide region contains aluminum, and an oxygen concentration in the fifth silicon carbide region is higher than an aluminum concentration in the fifth silicon carbide region.
15. A semiconductor device, comprising:
a silicon carbide layer having a first face and a second face opposite to the first face and including:
a first trench provided on a side of the first face and extending in a first direction parallel to the first face;
a second trench provided on the side of the first face, extending in the first direction, and having a distance of 100 nm or less from the first trench in a second direction parallel to the first face and perpendicular to the first direction;
a first silicon carbide region of n-type;
a second silicon carbide region of p-type provided between the first silicon carbide region and the first face and provided between the first trench and the second trench;
a third silicon carbide region of n-type provided between the second silicon carbide region and the first face and provided between the first trench and the second trench;
a fourth silicon carbide region provided between the first trench and the second silicon carbide region and containing oxygen; and
a fifth silicon carbide region provided between the second trench and the second silicon carbide region and containing oxygen;
a first gate electrode provided in the first trench;
a second gate electrode provided in the second trench;
a first gate insulating layer provided between the first gate electrode and the silicon carbide layer;
a second gate insulating layer provided between the second gate electrode and the silicon carbide layer;
a first electrode provided on the side of the first face of the silicon carbide layer and electrically connected to the third silicon carbide region; and
a second electrode provided on a side of the second face of the silicon carbide layer,
wherein the silicon carbide layer further includes an eighth silicon carbide region of p-type provided between the second silicon carbide region and the first face, provided between the first trench and the second trench, disposed in the first direction with respect to the third silicon carbide region, having a p-type impurity concentration higher than a p-type impurity concentration in the second silicon carbide region, and electrically connected to the first electrode.
16. A semiconductor device, comprising:
a silicon carbide layer having a first face and a second face opposite to the first face and including:
a first trench provided on a side of the first face and extending in a first direction parallel to the first face;
a second trench provided on the side of the first face, extending in the first direction, and having a distance of 100 nm or less from the first trench in a second direction parallel to the first face and perpendicular to the first direction;
a first silicon carbide region of n-type;
a second silicon carbide region of p-type provided between the first silicon carbide region and the first face and provided between the first trench and the second trench;
a third silicon carbide region of n-type provided between the second silicon carbide region and the first face and provided between the first trench and the second trench;
a fourth silicon carbide region provided between the first trench and the second silicon carbide region and containing oxygen; and
a fifth silicon carbide region provided between the second trench and the second silicon carbide region and containing oxygen;
a first gate electrode provided in the first trench;
a second gate electrode provided in the second trench;
a first gate insulating layer provided between the first gate electrode and the silicon carbide layer;
a second gate insulating layer provided between the second gate electrode and the silicon carbide layer;
a first electrode provided on the side of the first face of the silicon carbide layer and electrically connected to the third silicon carbide region; and
a second electrode provided on a side of the second face of the silicon carbide layer,
wherein the silicon carbide layer further includes:
a sixth silicon carbide region provided between the first trench and the first silicon carbide region and containing oxygen; and
a seventh silicon carbide region provided between the second trench and the first silicon carbide region and containing oxygen,
wherein the silicon carbide layer further includes a ninth silicon carbide region provided between the first trench and the first silicon carbide region and having a p-type impurity concentration higher than a p-type impurity concentration in the second silicon carbide region, and
the sixth silicon carbide region is p-type, and the seventh silicon carbide region is n-type.
17. A semiconductor device, comprising:
a silicon carbide layer having a first face and a second face opposite to the first face and including:
a first trench provided on a side of the first face and extending in a first direction parallel to the first face;
a second trench provided on the side of the first face, extending in the first direction, and having a distance of 100 nm or less from the first trench in a second direction parallel to the first face and perpendicular to the first direction;
a first silicon carbide region of n-type;
a second silicon carbide region of p-type provided between the first silicon carbide region and the first face and provided between the first trench and the second trench;
a third silicon carbide region of n-type provided between the second silicon carbide region and the first face and provided between the first trench and the second trench;
a fourth silicon carbide region provided between the first trench and the second silicon carbide region and containing oxygen; and
a fifth silicon carbide region provided between the second trench and the second silicon carbide region and containing oxygen;
a first gate electrode provided in the first trench;
a second gate electrode provided in the second trench;
a first gate insulating layer provided between the first gate electrode and the silicon carbide layer;
a second gate insulating layer provided between the second gate electrode and the silicon carbide layer:
a first electrode provided on the side of the first face of the silicon carbide layer and electrically connected to the third silicon carbide region; and
a second electrode provided on a side of the second face of the silicon carbide layer,
wherein the silicon carbide layer further includes:
a tenth silicon carbide region provided between the first trench and the first silicon carbide region, provided between the second trench and the first silicon carbide region, provided between the second silicon carbide region and the first silicon carbide region, in contact with the second silicon carbide region, and extending in the second direction; and
an eleventh silicon carbide region provided between the first trench and the first silicon carbide region, provided between the second trench and the first silicon carbide region, provided between the second silicon carbide region and the first silicon carbide region, in contact with the second silicon carbide region, extending in the second direction, and separated from the tenth silicon carbide region in the first direction.
18. A semiconductor device, comprising:
a silicon carbide layer having a first face and a second face opposite to the first face and including:
a first trench provided on a side of the first face and extending in a first direction parallel to the first face;
a second trench provided on the side of the first face, extending in the first direction, and having a distance of 100 nm or less from the first trench in a second direction parallel to the first face and perpendicular to the first direction;
a first silicon carbide region of n-type;
a second silicon carbide region of p-type provided between the first silicon carbide region and the first face and provided between the first trench and the second trench;
a third silicon carbide region of n-type provided between the second silicon carbide region and the first face and provided between the first trench and the second trench;
a fourth silicon carbide region provided between the first trench and the second silicon carbide region and containing oxygen; and
a fifth silicon carbide region provided between the second trench and the second silicon carbide region and containing oxygen;
a first gate electrode provided in the first trench;
a second gate electrode provided in the second trench;
a first gate insulating layer provided between the first gate electrode and the silicon carbide layer;
a second gate insulating layer provided between the second gate electrode and the silicon carbide layer;
a first electrode provided on the side of the first face of the silicon carbide layer and electrically connected to the third silicon carbide region;
a second electrode provided on a side of the second face of the silicon carbide layer,
a first region provided between the first gate insulating layer and the fourth silicon carbide region and containing at least one element selected from a group consisting of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), scandium (Sc), yttrium (Y), and lanthanoids (La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu); and
a second region provided between the second gate insulating layer and the fifth silicon carbide region and containing at least one element selected from a group consisting of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb), bismuth (Bi), scandium (Sc), yttrium (Y), and lanthanoids (La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu).