IP Library › Granted Patent US 12,204,468
Granted Patent B1
US 12,204,468 · App. 18/652,707 · Granted Jan 21, 2025

Universal memory interface with dynamic bidirectional data transfers

Inventors: Curtis McAllister (Los Altos, CA); Syrus Ziai (Los Altos, CA)
Assignee: Eliyan Corporation
G06F13/16G06F2213/16
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,204,468
App. No.
18/652,707
Granted
Jan 21, 2025
Kind
B1
Abstract

Semiconductor devices, packaging architectures and associated methods are disclosed. In one embodiment, a memory chiplet is disclosed. The memory chiplet includes at least one memory die of a first memory type. Memory control circuitry is coupled to the at least one memory die. An interface circuit is for coupling to a host IC chiplet. The interface circuit includes data input/output (I/O) circuitry for coupling to multiple data lanes. Link directional control circuitry selects, for a first memory transaction, a first subset of the multiple data lanes to transfer data between the memory chiplet and the host IC chiplet.

Claims (60)

1. A chiplet-based multi-chip module (MCM) to couple to a base substrate, comprising:

a package substrate that is separate from the base substrate;

a host integrated circuit (IC) chiplet coupled to the package substrate and comprising:

at least one processing element;

a primary memory interface to transfer memory information from the at least one processing element via a communications fabric;

a memory chiplet comprising:

a secondary memory interface coupled to the primary memory interface via multiple data lanes;

a memory port comprising a memory physical interface to access memory storage; and

link directional control circuitry to select, for a first memory transaction, a first subset of the multiple data lanes to transfer data between the host IC chiplet and the memory chiplet.

2. The chiplet-based MCM of claim 1 , wherein the memory chiplet further comprises:

a read data pipeline; and

wherein the link directional control circuitry selects the first subset of the multiple data lanes based on usage information relating to the read data pipeline.

3. The chiplet-based MCM of claim 1 , wherein the memory chiplet further comprises:

a write data pipeline; and

wherein the link directional control circuitry selects the first subset of the multiple data lanes based on usage information relating to the write data pipeline.

4. The chiplet-based MCM of claim 3 , wherein:

the usage information relating to the write data pipeline comprises difference information between received write data requests and received write data corresponding to the received write data requests.

5. The chiplet-based MCM of claim 1 , wherein:

the link directional control circuitry is to select, for a memory write operation following a memory read operation, the first subset of the multiple data lanes to receive write data from the host IC chiplet.

6. The chiplet-based MCM of claim 1 , wherein:

the link directional control circuitry is to select, for a memory write operation performed concurrent with a memory read operation, a second subset of the multiple data lanes to receive write data from the host IC chiplet.

7. The chiplet-based MCM of claim 1 , wherein:

the multiple data lanes comprise multiple bidirectional data lanes.

8. The chiplet-based MCM of claim 1 , wherein:

the multiple data lanes corresponds to a full set of memory channels associated with the memory chiplet.

9. The chiplet-based MCM of claim 1 , wherein:

the secondary memory interface and the memory port of the memory chiplet are formed in a base die; and

the memory storage comprises at least one memory die stacked on the base die.

10. The chiplet-based MCM of claim 1 , wherein:

the memory storage comprises high bandwidth memory (HBM), double-data rate (DDR) memory, low-power double-data rate (LPDDR) memory or graphics double-data rate (GDDR) memory.

11. A memory chiplet, comprising:

at least one memory die;

memory control circuitry coupled to the at least one memory die;

an interface circuit comprising multiple input/output (I/O) circuits to couple to a host IC chiplet via multiple data lanes; and

link directional control circuitry to select, for a first memory transaction, a first subset of the multiple data lanes to transfer data between the memory chiplet and the host IC chiplet.

12. The memory chiplet of claim 11 , further comprising:

a read data pipeline; and

wherein the link directional control circuitry selects the first subset of the multiple data lanes based on usage information relating to the read data pipeline.

13. The memory chiplet of claim 11 , further comprising:

a write data pipeline; and

wherein the link directional control circuitry selects the first subset of the multiple data lanes based on usage information relating to the write data pipeline.

14. The memory chiplet of claim 13 , wherein:

the usage information relating to the write data pipeline comprises difference information between received write data requests and received write data.

15. The memory chiplet of claim 11 , wherein:

the link directional control circuitry is to select, for a memory write transaction following a memory read operation, the first subset of the multiple data lanes to receive write data from the host IC chiplet.

16. The memory chiplet of claim 11 , wherein:

the link directional control circuitry is to select, for a memory write operation performed concurrent with a memory read operation, a second subset of the multiple data lanes to receive write data from the host IC chiplet.

17. The memory chiplet of claim 11 , wherein:

the multiple I/O circuits comprise multiple bidirectional I/O circuits.

18. The memory chiplet of claim 11 , wherein:

the interface circuit and the memory control circuitry of the memory chiplet are formed in a base die; and

the at least one memory die is stacked on the base die.

19. The memory chiplet of claim 18 , wherein:

the at least one memory die comprises high bandwidth memory (HBM), double-data rate (DDR) memory, low-power double-data rate (LPDDR) memory or graphics double-data rate (GDDR) memory.

20. A host integrated circuit (IC) chiplet, comprising:

at least one processing element;

a communications fabric switchably coupled to the at least one processing element; and

a primary memory interface to transfer memory information from the at least one processing element via the communications fabric, the primary memory interface comprising

data input/output (I/O) circuitry to couple to a memory chiplet via multiple data lanes; and

link directional control circuitry responsive to control information from the memory chiplet to configure, for a first memory transaction, a first subset of the data I/O circuitry corresponding to a first subset of the multiple data lanes to transfer data between the host IC chiplet and the memory chiplet.

Continuity (1)
Provisional Application 63543517 · Oct 11, 2023
References Cited (196)
US 4334305A · Girardi · 1982 [cited by applicant]
US 5396581A · Mashiko · 1995 [cited by applicant]
US 5677569A · Choi · 1997 [cited by applicant]
US 5892287A · Hoffman · 1999 [cited by applicant]
US 5910010A · Nishizawa · 1999 [cited by applicant]
US 6031729A · Berkely · 2000 [cited by applicant]
US 6055235A · Blanc · 2000 [cited by applicant]
US 6417737B1 · Moloudi · 2002 [cited by applicant]
US 6492727B2 · Nishizawa · 2002 [cited by applicant]
US 6690742B2 · Chan · 2004 [cited by applicant]
US 6721313B1 · Van Duyne · 2004 [cited by applicant]
US 6932618B1 · Nelson · 2005 [cited by applicant]
US 7027529B1 · Ohishi · 2006 [cited by applicant]
US 7248890B1 · Raghavan · 2007 [cited by applicant]
US 7269212B1 · Chau · 2007 [cited by applicant]
US 7477615B2 · Oshita · 2009 [cited by applicant]
US 7535958B2 · Best · 2009 [cited by applicant]
US 7593271B2 · Ong · 2009 [cited by applicant]
US 7701957B1 · Bicknell · 2010 [cited by applicant]
US 7907469B2 · Sohn et al. · 2011 [cited by applicant]
US 7978754B2 · Yeung · 2011 [cited by applicant]
US 8004330B1 · Acimovic · 2011 [cited by applicant]
US 8024142B1 · Gagnon · 2011 [cited by applicant]
US 8121541B2 · Rofougaran · 2012 [cited by applicant]
US 8176238B2 · Yu et al. · 2012 [cited by applicant]
US 8468381B2 · Jones · 2013 [cited by applicant]
US 8483579B2 · Fukuda · 2013 [cited by applicant]
US 8546955B1 · Wu · 2013 [cited by applicant]
US 8704364B2 · Banijamali et al. · 2014 [cited by applicant]
US 8861573B2 · Chu · 2014 [cited by applicant]
US 8948203B1 · Nolan · 2015 [cited by applicant]
US 8982905B2 · Kamble · 2015 [cited by applicant]
US 9088334B2 · Chakraborty · 2015 [cited by applicant]
US 9106229B1 · Hutton · 2015 [cited by examiner]
US 9129935B1 · Chandrasekar · 2015 [cited by applicant]
US 9294313B2 · Prokop · 2016 [cited by applicant]
US 9349707B1 · Sun · 2016 [cited by applicant]
US 9379878B1 · Lugthart · 2016 [cited by applicant]
US 9432298B1 · Smith · 2016 [cited by applicant]
US 9558143B2 · Leidel · 2017 [cited by applicant]
US 9832006B1 · Bandi · 2017 [cited by applicant]
US 9842784B2 · Nasrullah · 2017 [cited by applicant]
US 9886275B1 · Carlson · 2018 [cited by applicant]
US 9934842B2 · Mozak · 2018 [cited by applicant]
US 9961812B2 · Suorsa · 2018 [cited by applicant]
US 9977731B2 · Pyeon · 2018 [cited by applicant]
US 10171115B1 · Shirinfar · 2019 [cited by applicant]
US 10402363B2 · Long et al. · 2019 [cited by applicant]
US 10410694B1 · Arbel · 2019 [cited by examiner]
US 10439661B1 · Heydari · 2019 [cited by applicant]
US 10642767B1 · Farjadrad · 2020 [cited by examiner]
US 10678738B2 · Dai · 2020 [cited by applicant]
US 10735176B1 · Heydari · 2020 [cited by applicant]
US 10748852B1 · Sauter · 2020 [cited by applicant]
US 10803548B2 · Matam et al. · 2020 [cited by applicant]
US 10804204B2 · Rubin et al. · 2020 [cited by applicant]
US 10825496B2 · Murphy · 2020 [cited by applicant]
US 10855498B1 · Farjadrad · 2020 [cited by applicant]
US 10935593B2 · Goyal · 2021 [cited by applicant]
US 11088876B1 · Farjadrad · 2021 [cited by examiner]
US 11100028B1 · Subramaniam · 2021 [cited by examiner]
US 11164817B2 · Rubin et al. · 2021 [cited by applicant]
US 11204863B2 · Sheffler · 2021 [cited by applicant]
US 11581282B2 · Elshirbini · 2023 [cited by applicant]
US 11669474B1 · Lee · 2023 [cited by applicant]
US 11789649B2 · Chatterjee et al. · 2023 [cited by applicant]
US 11841815B1 · Farjadrad · 2023 [cited by applicant]
US 11842986B1 · Ramin · 2023 [cited by applicant]
US 11855043B1 · Farjadrad · 2023 [cited by applicant]
US 11855056B1 · Rad · 2023 [cited by applicant]
US 11892242B2 · Mao · 2024 [cited by examiner]
US 11893242B1 · Farjadrad · 2024 [cited by examiner]
US 11983125B2 · Soni · 2024 [cited by applicant]
US 12001355B1 · Dreier · 2024 [cited by applicant]
US 20020122479A1 · Agazzi · 2002 [cited by applicant]
US 20020136315A1 · Chan · 2002 [cited by applicant]
US 20040088444A1 · Baumer · 2004 [cited by applicant]
US 20040113239A1 · Prokofiev · 2004 [cited by applicant]
US 20040130347A1 · Moll · 2004 [cited by applicant]
US 20040156461A1 · Agazzi · 2004 [cited by applicant]
US 20050041683A1 · Kizer · 2005 [cited by applicant]
US 20050134306A1 · Stojanovic · 2005 [cited by applicant]
US 20050157781A1 · Ho · 2005 [cited by applicant]
US 20050205983A1 · Origasa · 2005 [cited by applicant]
US 20060060376A1 · Yoon · 2006 [cited by applicant]
US 20060103011A1 · Andry · 2006 [cited by applicant]
US 20060158229A1 · Hsu · 2006 [cited by applicant]
US 20060181283A1 · Wajcer · 2006 [cited by applicant]
US 20060188043A1 · Zerbe · 2006 [cited by applicant]
US 20060250985A1 · Baumer · 2006 [cited by applicant]
US 20060251194A1 · Bublil · 2006 [cited by applicant]
US 20070281643A1 · Kawai · 2007 [cited by applicant]
US 20080063395A1 · Royle · 2008 [cited by applicant]
US 20080143422A1 · Lalithambika · 2008 [cited by applicant]
US 20080186987A1 · Baumer · 2008 [cited by applicant]
US 20080222407A1 · Carpenter · 2008 [cited by applicant]
US 20090113158A1 · Schnell · 2009 [cited by applicant]
US 20090154365A1 · Diab · 2009 [cited by applicant]
US 20090174448A1 · Zabinski · 2009 [cited by applicant]
US 20090220240A1 · Abhari · 2009 [cited by applicant]
US 20090225900A1 · Yamaguchi · 2009 [cited by applicant]
US 20090304054A1 · Tonietto · 2009 [cited by applicant]
US 20100177841A1 · Yoon · 2010 [cited by applicant]
US 20100197231A1 · Kenington · 2010 [cited by applicant]
US 20100294547A1 · Hatanaka · 2010 [cited by applicant]
US 20110029803A1 · Redman-White · 2011 [cited by applicant]
US 20110038286A1 · Ta · 2011 [cited by applicant]
US 20110167297A1 · Su · 2011 [cited by applicant]
US 20110187430A1 · Tang · 2011 [cited by applicant]
US 20110204428A1 · Erickson · 2011 [cited by applicant]
US 20110267073A1 · Chengson · 2011 [cited by applicant]
US 20110293041A1 · Luo · 2011 [cited by applicant]
US 20120082194A1 · Tam · 2012 [cited by applicant]
US 20120182776A1 · Best · 2012 [cited by applicant]
US 20120192023A1 · Lee · 2012 [cited by applicant]
US 20120216084A1 · Chun · 2012 [cited by applicant]
US 20120327818A1 · Takatori · 2012 [cited by applicant]
US 20130181257A1 · Ngai · 2013 [cited by examiner]
US 20130222026A1 · Havens · 2013 [cited by applicant]
US 20130249290A1 · Buonpane · 2013 [cited by applicant]
US 20130285584A1 · Kim · 2013 [cited by applicant]
US 20140016524A1 · Choi · 2014 [cited by applicant]
US 20140048947A1 · Lee · 2014 [cited by applicant]
US 20140126613A1 · Zhang · 2014 [cited by applicant]
US 20140192583A1 · Rajan · 2014 [cited by applicant]
US 20140269860A1 · Brown · 2014 [cited by applicant]
US 20140269983A1 · Baeckler · 2014 [cited by applicant]
US 20150012677A1 · Nagarajan · 2015 [cited by applicant]
US 20150172040A1 · Pelekhaty · 2015 [cited by applicant]
US 20150180760A1 · Rickard · 2015 [cited by applicant]
US 20150206867A1 · Lim · 2015 [cited by applicant]
US 20150271074A1 · Hirth · 2015 [cited by applicant]
US 20150326348A1 · Shen · 2015 [cited by applicant]
US 20150358005A1 · Chen · 2015 [cited by applicant]
US 20160056125A1 · Pan · 2016 [cited by applicant]
US 20160071818A1 · Wang · 2016 [cited by applicant]
US 20160111406A1 · Mak · 2016 [cited by applicant]
US 20160217872A1 · Hossain · 2016 [cited by applicant]
US 20160294585A1 · Rahman · 2016 [cited by applicant]
US 20170317859A1 · Hormati · 2017 [cited by applicant]
US 20170331651A1 · Suzuki · 2017 [cited by applicant]
US 20180010329A1 · Golding, Jr. · 2018 [cited by applicant]
US 20180082981A1 · Gowda · 2018 [cited by applicant]
US 20180137005A1 · Wu · 2018 [cited by applicant]
US 20180175001A1 · Pyo · 2018 [cited by applicant]
US 20180190635A1 · Choi · 2018 [cited by applicant]
US 20180210830A1 · Malladi et al. · 2018 [cited by applicant]
US 20180315735A1 · Delacruz · 2018 [cited by examiner]
US 20190044764A1 · Hollis · 2019 [cited by applicant]
US 20190058457A1 · Ran · 2019 [cited by applicant]
US 20190108111A1 · Levin · 2019 [cited by applicant]
US 20190198489A1 · Kim · 2019 [cited by applicant]
US 20190319626A1 · Dabral · 2019 [cited by examiner]
US 20200051961A1 · Rickard · 2020 [cited by examiner]
US 20200105718A1 · Collins et al. · 2020 [cited by applicant]
US 20200257619A1 · Sheffler · 2020 [cited by applicant]
US 20200373286A1 · Dennis · 2020 [cited by applicant]
US 20210056058A1 · Lee · 2021 [cited by applicant]
US 20210082875A1 · Nelson · 2021 [cited by applicant]
US 20210117102A1 · Grenier · 2021 [cited by applicant]
US 20210181974A1 · Ghosh · 2021 [cited by applicant]
US 20210183842A1 · Fay · 2021 [cited by applicant]
US 20210193567A1 · Cheah et al. · 2021 [cited by applicant]
US 20210225827A1 · Lanka · 2021 [cited by applicant]
US 20210258078A1 · Meade · 2021 [cited by applicant]
US 20210311900A1 · Malladi · 2021 [cited by applicant]
US 20210365203A1 · O · 2021 [cited by applicant]
US 20220051989A1 · Agarwal · 2022 [cited by applicant]
US 20220121381A1 · Brewer · 2022 [cited by applicant]
US 20220159860A1 · Winzer · 2022 [cited by applicant]
US 20220179792A1 · Banerjee · 2022 [cited by applicant]
US 20220222198A1 · Lanka · 2022 [cited by applicant]
US 20220223522A1 · Scearce · 2022 [cited by applicant]
US 20220237138A1 · Lanka · 2022 [cited by applicant]
US 20220254390A1 · Gans · 2022 [cited by applicant]
US 20220327276A1 · Seshan · 2022 [cited by applicant]
US 20220334995A1 · Das Sharma · 2022 [cited by applicant]
US 20220342840A1 · Das Sharma · 2022 [cited by applicant]
US 20230039033A1 · Zarkovsky · 2023 [cited by applicant]
US 20230068802A1 · Wang · 2023 [cited by applicant]
US 20230090061A1 · Zarkovsky · 2023 [cited by applicant]
US 20230181599A1 · Erickson · 2023 [cited by applicant]
US 20230359579A1 · Madhira · 2023 [cited by applicant]
US 20240273041A1 · Lee · 2024 [cited by applicant]
Block Memory Generator v8.2 LogiCORE IP Product Guide Vivado Design Suite; Xilinx; Apr. 1, 2015. [cited by applicant]
Farjadrad et al., “A Bunch of Wires (BOW) Interface for Inter-Chiplet Communication”, 2019 IEEE Symposium on High-Performance Interconnects (HOTI), pp. 27-30, Oct. 2019. [cited by applicant]
Universal Chiplet Interconnect Express (UCIe) Specification Rev. 1.0, Feb. 24, 2022. [cited by applicant]
Kurt Lender et al., “Questions from the Compute Express Link Exploring Coherent Memory and Innovative Cases Webinar”, Apr. 13, 2020, CXL Consortium, pp. 1-6. [cited by applicant]
Planet Analog, “The basics of SerDes (serializers/deserializers) for interfacing”, Dec. 1, 2020, Planet Analog, as preserved by the internet Archive, pp. 1-9. [cited by applicant]
“Hot Chips 2017: Intel Deep Dives Into EMIB”, TomsHardware.com; Aug. 25, 2017. [cited by applicant]
“Using Chiplet Encapsulation Technology to Achieve Processing-In-Memory Functions”; Micromachines 2022, 13, 1790; https://www.mdpi.com/journal/micromachines; Tian et al. [cited by applicant]
“Multiport memory for high-speed interprocessor communication in MultiCom;” Scientia Iranica, vol. 8, No. 4, pp. 322-331; Sharif University of Technology, Oct. 2001; Asgari et al. [cited by applicant]
Universal Chiplet Interconnect Express (UCIe) Specification, Revision 1.1, Version 1.0, Jul. 10, 2023. [cited by applicant]
Hybrid Memory Cube Specification 2.1, Hybrid Memory Cube Consortium, HMC-30G-VSR PHY, 2014. [cited by applicant]
“Using Dual Port Memory as Interconnect”, EE Times, Apr. 26, 2005, Daniel Barry. [cited by applicant]
Quartus II Handbook Version 9.0 vol. 4: SOPC Builder; “System Interconnect Fabric for Memory-Mapped Interfaces”; Mar. 2009. [cited by applicant]