Semiconductor device and method of manufacturing the same
In one embodiment, a semiconductor device includes a first substrate including first and second regions on its surface, a first control circuit on the first substrate in the first region, a first memory cell array above the first control circuit in the first region and connected to the first control circuit, and a first pad above the first memory cell array in the first region and connected to the first control circuit. The device further includes a second control circuit on the first substrate in the second region, a second memory cell array above the second control circuit in the second region and connected to the second control circuit, a second pad above the second memory cell array in the second region and connected to the second control circuit, and a connection line above the first and second memory cell arrays and connecting the first and second pads.
1. A semiconductor device comprising:
a first substrate;
a first control circuit provided on the first substrate;
a bit line provided above the first control circuit;
a plurality of electrode layers stacked in a first direction, and provided above the bit line;
a first semiconductor layer provided above the plurality of electrode layers;
a columnar portion extending in the plurality of electrode layers in the first direction, and including a second semiconductor layer electrically connected to the bit line and the first semiconductor layer;
a third semiconductor layer above the plurality of electrode layers;
an opening penetrating the third semiconductor layer;
a first plug extending in the first direction, and electrically connected to the first control circuit; and
a metal conductive layer, which at least in part functions as a bonding pad, provided above the second semiconductor layer and the third semiconductor layer, and electrically connected to the first plug through the opening.
2. The device of claim 1 , wherein the third semiconductor layer is a second substrate.
3. The device of claim 1 , wherein the bonding pad is electrically connected to the first control circuit via a second plug provided in the third semiconductor layer.
4. The device of claim 1 , further comprising an insulator having an opening on the bonding pad.
5. The device of claim 1 , further comprising an insulating layer provided on an inner surface of the opening, and being in contact with the metal conductive layer.
6. The device of claim 1 , wherein the metal conductive layer includes aluminum layer.
7. The device of claim 1 , wherein the first plug comprises a portion including an upper end having a first width in a second direction perpendicular to the first direction, and a lower end having a second width in the second direction, the second width being greater than the first width.
8. A method of manufacturing a semiconductor device, comprising:
forming a first control circuit on a first substrate;
providing a bit line, a plurality of electrode layers, a first semiconductor layer, a columnar portion, a third semiconductor layer, and a first plug, the bit line being provided above the first control circuit, the plurality of electrode layers being stacked in a first direction and provided above the bit line, the first semiconductor layer being provided above the plurality of electrode layers, the columnar portion extending in the plurality of electrode layers in the first direction and including a second semiconductor layer electrically connected to the bit line and the first semiconductor layer, the third semiconductor layer above the plurality of electrode layers, the first plug extending in the first direction and being electrically connected to the first control circuit;
forming an opening penetrating the third semiconductor layer; and
forming a metal conductive layer, which at least in part functions as a bonding pad, provided above the second semiconductor layer and the third semiconductor layer, and electrically connected to the first plug through the opening.
9. The method of claim 8 , further comprising dicing a wafer including the semiconductor device to cut the metal conductive layer, thereby manufacturing a semiconductor device including the first control circuit, the bit line, the plurality of electrode layers, the first semiconductor layer, the columnar portion, the third semiconductor layer, the first plug, the opening and the bonding pad.
10. The method of claim 8 , further comprising bonding a bonding wire to the bonding pad.
11. The method of claim 8 , further comprising forming a first dicing line having a third width and a second dicing line having a fourth width larger than the third width, on the first substrate,
wherein the metal conductive layer is formed to cross the first dicing line.
12. The method of claim 8 , further comprising forming an insulating layer on an inner surface of the opening, wherein the metal conductive layer is formed to be in contact with the insulating layer.
13. The method of claim 8 , wherein the metal conductive layer includes aluminum layer.
14. The method of claim 8 , wherein the first plug is formed to include a portion including an upper end having a first width in a second direction perpendicular to the first direction, and a lower end having a second width in the second direction, the second width being greater than the first width.