IP Library › Granted Patent US 12,243,765
Granted Patent B2
US 12,243,765 · App. 18/829,079 · Granted Mar 4, 2025

3D semiconductor device and structure with metal layers and memory cells

Inventors: Zvi Or-Bach (Haifa, IL); Brian Cronquist (Klamath Falls, OR); Deepak C. Sekar (Sunnyvale, CA)
Assignee: Monolithic 3D Inc.
H01L21/6835G11C8/16H01L21/743H01L21/76254H01L21/76898H01L23/481H01L23/5252H10B10/00H10B10/125H10B12/053H10B12/09H10B12/20H10B12/50H10B20/00H10B20/25H10B41/20H10B41/40H10B41/41H10B43/20H10B43/40H10D10/051H10D30/0411H10D30/0413H10D30/0512H10D30/60H10D30/681H10D30/69H10D30/711H10D30/792H10D64/027H10D64/513H10D84/0172H10D84/038H10D84/85H10D84/907H10D84/998H10D86/01H10D86/201H10D88/00H10D88/01H10D89/10H01L23/3677H01L24/13H01L24/16H01L24/45H01L24/48H01L25/0655H01L25/0657H01L25/50H01L2221/68368H01L2223/5442H01L2223/54426H01L2224/131H01L2224/16145H01L2224/16146H01L2224/16227H01L2224/16235H01L2224/32145H01L2224/32225H01L2224/45124H01L2224/45147H01L2224/48091H01L2224/48227H01L2224/73204H01L2224/73253H01L2224/73265H01L2224/81005H01L2224/83894H01L2225/06513H01L2225/06541H01L2924/00011H01L2924/01002H01L2924/01004H01L2924/01013H01L2924/01018H01L2924/01019H01L2924/01029H01L2924/01046H01L2924/01066H01L2924/01068H01L2924/01077H01L2924/01078H01L2924/01322H01L2924/10253H01L2924/10329H01L2924/12032H01L2924/12033H01L2924/12036H01L2924/12042H01L2924/1301H01L2924/1305H01L2924/13062H01L2924/13091H01L2924/14H01L2924/1461H01L2924/15311H01L2924/1579H01L2924/16152H01L2924/181H01L2924/19041H01L2924/30105H01L2924/3011H01L2924/3025H10B12/05H10D86/0214H10D86/40H10D86/60
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,243,765
App. No.
18/829,079
Granted
Mar 4, 2025
Kind
B2
Abstract

A 3D semiconductor device, the device including: a first level including a first single crystal layer and including first transistors which each includes a single crystal channel; a first metal layer; a second metal layer overlaying the first metal layer; a second level including second transistors, first memory cells including at least one second transistor, and overlaying the second metal layer; a third level including third transistors and overlaying the second level; a fourth level including fourth transistors, second memory cells including at least one fourth transistor, and overlaying the third level, where at least one of the second transistors includes a metal gate, where the first level includes memory control circuits which control writing to the second memory cells, and at least one Phase-Lock-Loop (“PLL”) circuit or at least one Digital-Lock-Loop (“DLL”) circuit.

Claims (84)

1. A 3D semiconductor device, the device comprising:

a first level comprising a first single crystal layer, said first level comprising first transistors,

wherein each of said first transistors comprises a single crystal channel;

a first metal layer;

a second metal layer overlaying said first metal layer;

a second level comprising a plurality of second transistors, said second level overlaying said first level;

a third level comprising a plurality of third transistors, said third level overlaying said second level;

a fourth level comprising a plurality of fourth transistors, said fourth level overlaying said third level,

wherein said second level comprises a plurality of first memory cells,

wherein each of said plurality of first memory cells comprises at least one of said second transistors,

wherein said fourth level comprises a plurality of second memory cells,

wherein each of said plurality of second memory cells comprises at least one of said fourth transistors,

wherein said first level comprises memory control circuits,

wherein at least one of said second transistors comprises a metal gate, and

wherein said memory control circuits control writing to said plurality of second memory cells; and

at least one Phase-Lock-Loop (“PLL”) circuit or at least one Digital-Lock-Loop (“DLL”) circuit.

2. The device according to claim 1 , further comprising:

metal pads and metal pins for connecting said second level to said first level.

3. The device according to claim 1 ,

wherein said first level comprises a plurality of Serializer and Deserializer (“SerDes”) circuits.

4. The device according to claim 1 ,

wherein said first level comprises a plurality of Through Silicon Via (“TSV”).

5. The device according to claim 1 ,

wherein said memory cells are DRAM type memory cells.

6. The device according to claim 1 ,

wherein at least one of said first transistors controls power delivery for at least one of said third transistors.

7. The device according to claim 1 , further comprising:

pads for connecting inputs and outputs of said device to an external device,

wherein said pads are disposed underneath said first single crystal layer.

8. A 3D semiconductor device, the device comprising:

a first level comprising a first single crystal layer, said first level comprising first transistors,

wherein each of said first transistors comprises a single crystal channel;

a first metal layer;

a second metal layer overlaying said first metal layer;

a second level comprising a plurality of second transistors, said second level overlaying said first level;

a third level comprising a plurality of third transistors, said third level overlaying said second level;

a fourth level comprising a plurality of fourth transistors, said fourth level overlaying said third level,

wherein said second level comprises a plurality of first memory cells,

wherein each of said plurality of first memory cells comprises at least one of said second transistors,

wherein said fourth level comprises a plurality of second memory cells,

wherein each of said plurality of second memory cells comprises at least one of said fourth transistors,

wherein said first level comprises memory control circuits,

wherein at least one of said second transistors comprises a metal gate,

wherein said memory control circuits control writing to said plurality of second memory cells, and

wherein said third level comprises at least four independently controlled memory arrays.

9. The device according to claim 8 , further comprising:

metal pads and metal pins for connecting said second level to said first level.

10. The device according to claim 8 , further comprising:

at least one Phase-Lock-Loop (“PLL”) circuit or at least one Digital-Lock-Loop (“DLL”) circuit.

11. The device according to claim 8 ,

wherein said first level comprises a plurality of Through Silicon Via (“TSV”).

12. The device according to claim 8 ,

wherein said memory cells are DRAM type memory cells.

13. The device according to claim 8 ,

wherein at least one of said first transistors controls power delivery for at least one of said third transistors.

14. The device according to claim 8 , further comprising:

pads for connecting inputs and outputs of said device to an external device,

wherein said pads are disposed underneath said first single crystal layer.

15. A 3D semiconductor device, the device comprising:

a first level comprising a first single crystal layer, said first level comprising first transistors,

wherein each of said first transistors comprises a single crystal channel;

a first metal layer;

a second metal layer overlaying said first metal layer;

a second level comprising a plurality of second transistors, said second level overlaying said first level;

a third level comprising a plurality of third transistors, said third level overlaying said second level; and

a fourth level comprising a plurality of fourth transistors, said fourth level overlaying said third level,

wherein said second level comprises a plurality of first memory cells,

wherein each of said plurality of first memory cells comprises at least one of said second transistors,

wherein said fourth level comprises a plurality of second memory cells,

wherein each of said plurality of second memory cells comprises at least one of said fourth transistors,

wherein said first level comprises memory control circuits,

wherein at least one of said second transistors comprises a metal gate,

wherein said memory control circuits control writing to said plurality of second memory cells, and

wherein said first level is bonded to said second level.

16. The device according to claim 15 , further comprising:

metal pads and metal pins for connecting said second level to said first level.

17. The device according to claim 15 , further comprising:

at least one Phase-Lock-Loop (“PLL”) circuit or at least one Digital-Lock-Loop (“DLL”) circuit.

18. The device according to claim 15 ,

wherein said memory cells are DRAM type memory cells.

19. The device according to claim 15 ,

wherein at least one of said first transistors controls power delivery for at least one of said third transistors.

20. The device according to claim 15 ,

wherein said first level comprises a plurality of Through Silicon Via (“TSV”).

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 11, 2026
From: OR-BACH, ZVI, MR.; CRONQUIST, BRIAN, MR.; SEKAR, DEEPAK C., DR.
To: MONOLITHIC 3D INC.
Reel/Frame 074616/0158 →
Continuity (26)
Continuation In Part 18736423 · Jun 6, 2024
Continuation In Part 18677553 · May 29, 2024
Continuation In Part 18424790 · Jan 27, 2024
Continuation In Part 18382468 · Oct 20, 2023
Continuation In Part 18228675 · Aug 1, 2023
Continuation In Part 18092337 · Jan 1, 2023
Continuation In Part 17942109 · Sep 9, 2022
Continuation In Part 17340004 · Jun 5, 2021
Continuation In Part 16537564 · Aug 10, 2019
Continuation In Part 15460230 · Mar 16, 2017
Continuation In Part 14821683 · Aug 7, 2015
Continuation In Part 13492395 · Jun 8, 2012
Continuation 13273712 · Oct 14, 2011
Continuation In Part 13016313 · Jan 28, 2011
Continuation In Part 12970602 · Dec 16, 2010
Continuation In Part 12949617 · Nov 18, 2010
Continuation In Part 17147320 · Jan 12, 2021
Continuation In Part 16537564 · Aug 10, 2019
Continuation In Part 15460230 · Mar 16, 2017
Continuation In Part 14821683 · Aug 7, 2015
Continuation In Part 13492395 · Jun 8, 2012
Continuation 13273712 · Oct 14, 2011
Continuation In Part 13016313 · Jan 28, 2011
Continuation In Part 12970602 · Dec 16, 2010
Continuation In Part 12949617 · Nov 18, 2010
Related Publication 20250006544A1 · Jan 2, 2025
References Cited (400)
US 3007090A · Rutz · 1961 [cited by applicant]
US 3819959A · Chang et al. · 1974 [cited by applicant]
US 4009483A · Clark · 1977 [cited by applicant]
US 4197555A · Uehara et al. · 1980 [cited by applicant]
US 4213139A · Rao et al. · 1980 [cited by applicant]
US 4400715A · Barbee et al. · 1983 [cited by applicant]
US 4487635A · Kugimiya et al. · 1984 [cited by applicant]
US 4510670A · Schwabe · 1985 [cited by applicant]
US 4522657A · Rohatgi et al. · 1985 [cited by applicant]
US 4612083A · Yasumoto et al. · 1986 [cited by applicant]
US 4643950A · Ogura et al. · 1987 [cited by applicant]
US 4704785A · Curran · 1987 [cited by applicant]
US 4711858A · Harder et al. · 1987 [cited by applicant]
US 4721885A · Brodie · 1988 [cited by applicant]
US 4732312A · Kennedy et al. · 1988 [cited by applicant]
US 4733288A · Sato · 1988 [cited by applicant]
US 4829018A · Wahlstrom · 1989 [cited by applicant]
US 4854986A · Raby · 1989 [cited by applicant]
US 4866304A · Yu · 1989 [cited by applicant]
US 4939568A · Kato et al. · 1990 [cited by applicant]
US 4956307A · Pollack et al. · 1990 [cited by applicant]
US 5012153A · Atkinson et al. · 1991 [cited by applicant]
US 5032007A · Silverstein et al. · 1991 [cited by applicant]
US 5047979A · Leung · 1991 [cited by applicant]
US 5087585A · Hayashi · 1992 [cited by applicant]
US 5093704A · Sato et al. · 1992 [cited by applicant]
US 5106775A · Kaga et al. · 1992 [cited by applicant]
US 5152857A · Ito et al. · 1992 [cited by applicant]
US 5162879A · Gill · 1992 [cited by applicant]
US 5189500A · Kusunoki · 1993 [cited by applicant]
US 5217916A · Anderson et al. · 1993 [cited by applicant]
US 5250460A · Yamagata et al. · 1993 [cited by applicant]
US 5258643A · Cohen · 1993 [cited by applicant]
US 5265047A · Leung et al. · 1993 [cited by applicant]
US 5266511A · Takao · 1993 [cited by applicant]
US 5277748A · Sakaguchi et al. · 1994 [cited by applicant]
US 5286670A · Kang et al. · 1994 [cited by applicant]
US 5294556A · Kawamura · 1994 [cited by applicant]
US 5308782A · Mazure et al. · 1994 [cited by applicant]
US 5312771A · Yonehara · 1994 [cited by applicant]
US 5317236A · Zavracky et al. · 1994 [cited by applicant]
US 5324980A · Kusunoki · 1994 [cited by applicant]
US 5355022A · Sugahara et al. · 1994 [cited by applicant]
US 5371037A · Yonehara · 1994 [cited by applicant]
US 5374564A · Bruel · 1994 [cited by applicant]
US 5374581A · Ichikawa et al. · 1994 [cited by applicant]
US 5424560A · Norman et al. · 1995 [cited by applicant]
US 5475280A · Jones et al. · 1995 [cited by applicant]
US 5478762A · Chao · 1995 [cited by applicant]
US 5485031A · Zhang et al. · 1996 [cited by applicant]
US 5498978A · Takahashi et al. · 1996 [cited by applicant]
US 5527423A · Neville et al. · 1996 [cited by applicant]
US 5535342A · Taylor · 1996 [cited by applicant]
US 5554870A · Fitch et al. · 1996 [cited by applicant]
US 5563084A · Ramm et al. · 1996 [cited by applicant]
US 5583349A · Norman et al. · 1996 [cited by applicant]
US 5583350A · Norman et al. · 1996 [cited by applicant]
US 5586291A · Lasker · 1996 [cited by applicant]
US 5594563A · Larson · 1997 [cited by applicant]
US 5604137A · Yamazaki et al. · 1997 [cited by applicant]
US 5617991A · Pramanick et al. · 1997 [cited by applicant]
US 5627106A · Hsu · 1997 [cited by applicant]
US 5656548A · Zavracky et al. · 1997 [cited by applicant]
US 5656553A · Leas et al. · 1997 [cited by applicant]
US 5659194A · Iwamatsu · 1997 [cited by applicant]
US 5670411A · Yonehara · 1997 [cited by applicant]
US 5681756A · Norman et al. · 1997 [cited by applicant]
US 5695557A · Yamagata et al. · 1997 [cited by applicant]
US 5701027A · Gordon et al. · 1997 [cited by applicant]
US 5707745A · Forrest et al. · 1998 [cited by applicant]
US 5714395A · Bruel · 1998 [cited by applicant]
US 5721160A · Forrest et al. · 1998 [cited by applicant]
US 5737748A · Shigeeda · 1998 [cited by applicant]
US 5739552A · Kimura et al. · 1998 [cited by applicant]
US 5744979A · Goetting · 1998 [cited by applicant]
US 5748161A · Lebby et al. · 1998 [cited by applicant]
US 5757026A · Forrest et al. · 1998 [cited by applicant]
US 5770483A · Kadosh · 1998 [cited by applicant]
US 5770881A · Pelella et al. · 1998 [cited by applicant]
US 5781031A · Bertin et al. · 1998 [cited by applicant]
US 5817574A · Gardner · 1998 [cited by applicant]
US 5829026A · Leung et al. · 1998 [cited by applicant]
US 5835396A · Zhang · 1998 [cited by applicant]
US 5854123A · Sato et al. · 1998 [cited by applicant]
US 5861929A · Spitzer · 1999 [cited by applicant]
US 5877034A · Ramm · 1999 [cited by applicant]
US 5877070A · Goesele et al. · 1999 [cited by applicant]
US 5882987A · Srikrishnan · 1999 [cited by applicant]
US 5883525A · Tavana et al. · 1999 [cited by applicant]
US 5889903A · Rao · 1999 [cited by applicant]
US 5893721A · Huang et al. · 1999 [cited by applicant]
US 5915167A · Leedy · 1999 [cited by applicant]
US 5920788A · Reinberg · 1999 [cited by applicant]
US 5937312A · Iyer et al. · 1999 [cited by applicant]
US 5943574A · Tehrani et al. · 1999 [cited by applicant]
US 5952680A · Strite · 1999 [cited by applicant]
US 5952681A · Chen · 1999 [cited by applicant]
US 5965875A · Merrill · 1999 [cited by applicant]
US 5977579A · Noble · 1999 [cited by applicant]
US 5977961A · Rindal · 1999 [cited by applicant]
US 5980633A · Yamagata et al. · 1999 [cited by applicant]
US 5985742A · Henley et al. · 1999 [cited by applicant]
US 5994746A · Reisinger · 1999 [cited by applicant]
US 5998808A · Matsushita · 1999 [cited by applicant]
US 6001693A · Yeouchung et al. · 1999 [cited by applicant]
US 6009496A · Tsai · 1999 [cited by applicant]
US 6020252A · Aspar et al. · 2000 [cited by applicant]
US 6020263A · Shih et al. · 2000 [cited by applicant]
US 6027958A · Vu et al. · 2000 [cited by applicant]
US 6030700A · Forrest et al. · 2000 [cited by applicant]
US 6052498A · Paniccia · 2000 [cited by applicant]
US 6054370A · Doyle · 2000 [cited by applicant]
US 6057212A · Chan et al. · 2000 [cited by applicant]
US 6071795A · Cheung et al. · 2000 [cited by applicant]
US 6075268A · Gardner et al. · 2000 [cited by applicant]
US 6103597A · Aspar et al. · 2000 [cited by applicant]
US 6111260A · Dawson et al. · 2000 [cited by applicant]
US 6125217A · Paniccia et al. · 2000 [cited by applicant]
US 6153495A · Kub et al. · 2000 [cited by applicant]
US 6191007B1 · Matsui et al. · 2001 [cited by applicant]
US 6200878B1 · Yamagata · 2001 [cited by applicant]
US 6222203B1 · Ishibashi et al. · 2001 [cited by applicant]
US 6226197B1 · Nishimura · 2001 [cited by applicant]
US 6229161B1 · Nemati et al. · 2001 [cited by applicant]
US 6242324B1 · Kub et al. · 2001 [cited by applicant]
US 6242778B1 · Marmillion et al. · 2001 [cited by applicant]
US 6252465B1 · Katoh · 2001 [cited by applicant]
US 6259623B1 · Takahashi · 2001 [cited by applicant]
US 6261935B1 · See et al. · 2001 [cited by applicant]
US 6264805B1 · Forrest et al. · 2001 [cited by applicant]
US 6281102B1 · Cao et al. · 2001 [cited by applicant]
US 6294018B1 · Hamm et al. · 2001 [cited by applicant]
US 6306705B1 · Parekh et al. · 2001 [cited by applicant]
US 6321134B1 · Henley et al. · 2001 [cited by applicant]
US 6322903B1 · Siniaguine et al. · 2001 [cited by applicant]
US 6331468B1 · Aronowitz et al. · 2001 [cited by applicant]
US 6331790B1 · Or-Bach et al. · 2001 [cited by applicant]
US 6331943B1 · Naji et al. · 2001 [cited by applicant]
US 6353492B2 · McClelland et al. · 2002 [cited by applicant]
US 6355501B1 · Fung et al. · 2002 [cited by applicant]
US 6355976B1 · Faris · 2002 [cited by applicant]
US 6358631B1 · Forrest et al. · 2002 [cited by applicant]
US 6365270B2 · Forrest et al. · 2002 [cited by applicant]
US 6376337B1 · Wang et al. · 2002 [cited by applicant]
US 6377504B1 · Hilbert · 2002 [cited by applicant]
US 6380046B1 · Yamazaki · 2002 [cited by applicant]
US 6392253B1 · Saxena · 2002 [cited by applicant]
US 6404043B1 · Isaak · 2002 [cited by applicant]
US 6417108B1 · Akino et al. · 2002 [cited by applicant]
US 6420215B1 · Knall et al. · 2002 [cited by applicant]
US 6423614B1 · Doyle · 2002 [cited by applicant]
US 6429481B1 · Mo et al. · 2002 [cited by applicant]
US 6429484B1 · Yu · 2002 [cited by applicant]
US 6430734B1 · Zahar · 2002 [cited by applicant]
US 6448615B1 · Forbes · 2002 [cited by applicant]
US 6475869B1 · Yu · 2002 [cited by applicant]
US 6476493B2 · Or-Bach et al. · 2002 [cited by applicant]
US 6479821B1 · Hawryluk et al. · 2002 [cited by applicant]
US 6483707B1 · Freuler et al. · 2002 [cited by applicant]
US 6507115B2 · Hofstee · 2003 [cited by applicant]
US 6515334B2 · Yamazaki et al. · 2003 [cited by applicant]
US 6515511B2 · Sugibayashi et al. · 2003 [cited by applicant]
US 6526559B2 · Schiefele et al. · 2003 [cited by applicant]
US 6528391B1 · Henley et al. · 2003 [cited by applicant]
US 6534352B1 · Kim · 2003 [cited by applicant]
US 6534382B1 · Sakaguchi et al. · 2003 [cited by applicant]
US 6544837B1 · Divakauni et al. · 2003 [cited by applicant]
US 6545314B2 · Forbes et al. · 2003 [cited by applicant]
US 6555901B1 · Yoshihara et al. · 2003 [cited by applicant]
US 6563139B2 · Hen · 2003 [cited by applicant]
US 6580124B1 · Cleeves · 2003 [cited by applicant]
US 6580289B2 · Cox · 2003 [cited by applicant]
US 6600173B2 · Tiwari · 2003 [cited by applicant]
US 6617694B2 · Kodaira et al. · 2003 [cited by applicant]
US 6620659B2 · Emmma et al. · 2003 [cited by applicant]
US 6624046B1 · Zavracky et al. · 2003 [cited by applicant]
US 6627518B1 · Inoue et al. · 2003 [cited by applicant]
US 6627985B2 · Huppenthal et al. · 2003 [cited by applicant]
US 6630713B2 · Geusic · 2003 [cited by applicant]
US 6635552B1 · Gonzalez · 2003 [cited by applicant]
US 6635588B1 · Hawryluk et al. · 2003 [cited by applicant]
US 6638834B2 · Gonzalez · 2003 [cited by applicant]
US 6642744B2 · Or-Bach et al. · 2003 [cited by applicant]
US 6653209B1 · Yamagata · 2003 [cited by applicant]
US 6653712B2 · Knall et al. · 2003 [cited by applicant]
US 6661085B2 · Kellar et al. · 2003 [cited by applicant]
US 6677204B2 · Cleeves et al. · 2004 [cited by applicant]
US 6686253B2 · Or-Bach · 2004 [cited by applicant]
US 6689660B1 · Noble · 2004 [cited by applicant]
US 6701071B2 · Wada et al. · 2004 [cited by applicant]
US 6703328B2 · Tanaka et al. · 2004 [cited by applicant]
US 6756633B2 · Wang et al. · 2004 [cited by applicant]
US 6756811B2 · Or-Bach · 2004 [cited by applicant]
US 6759282B2 · Campbell et al. · 2004 [cited by applicant]
US 6762076B2 · Kim et al. · 2004 [cited by applicant]
US 6774010B2 · Chu et al. · 2004 [cited by applicant]
US 6805979B2 · Ogura et al. · 2004 [cited by applicant]
US 6806171B1 · Ulyashin et al. · 2004 [cited by applicant]
US 6809009B2 · Aspar et al. · 2004 [cited by applicant]
US 6815781B2 · Vyvoda et al. · 2004 [cited by applicant]
US 6819136B2 · Or-Bach · 2004 [cited by applicant]
US 6821826B1 · Chan et al. · 2004 [cited by applicant]
US 6841813B2 · Walker et al. · 2005 [cited by applicant]
US 6844243B1 · Gonzalez · 2005 [cited by applicant]
US 6864534B2 · Ipposhi et al. · 2005 [cited by applicant]
US 6875671B2 · Faris · 2005 [cited by applicant]
US 6882572B2 · Wang et al. · 2005 [cited by applicant]
US 6888375B2 · Feng et al. · 2005 [cited by applicant]
US 6917219B2 · New · 2005 [cited by applicant]
US 6927431B2 · Gonzalez · 2005 [cited by applicant]
US 6930511B2 · Or-Bach · 2005 [cited by applicant]
US 6943067B2 · Greenlaw · 2005 [cited by applicant]
US 6943407B2 · Ouyang et al. · 2005 [cited by applicant]
US 6949421B1 · Padmanabhan et al. · 2005 [cited by applicant]
US 6953956B2 · Or-Bach et al. · 2005 [cited by applicant]
US 6967149B2 · Meyer et al. · 2005 [cited by applicant]
US 6985012B2 · Or-Bach · 2006 [cited by applicant]
US 6989687B2 · Or-Bach · 2006 [cited by applicant]
US 6995430B2 · Langdo et al. · 2006 [cited by applicant]
US 6995456B2 · Nowak · 2006 [cited by applicant]
US 7015719B1 · Feng et al. · 2006 [cited by applicant]
US 7016569B2 · Mule et al. · 2006 [cited by applicant]
US 7018875B2 · Madurawe · 2006 [cited by applicant]
US 7019557B2 · Madurawe · 2006 [cited by applicant]
US 7043106B2 · West et al. · 2006 [cited by applicant]
US 7052941B2 · Lee · 2006 [cited by applicant]
US 7064579B2 · Madurawe · 2006 [cited by applicant]
US 7067396B2 · Aspar et al. · 2006 [cited by applicant]
US 7067909B2 · Reif et al. · 2006 [cited by applicant]
US 7068070B2 · Or-Bach · 2006 [cited by applicant]
US 7068072B2 · New et al. · 2006 [cited by applicant]
US 7078739B1 · Nemati et al. · 2006 [cited by applicant]
US 7094667B1 · Bower · 2006 [cited by applicant]
US 7098691B2 · Or-Bach et al. · 2006 [cited by applicant]
US 7105390B2 · Brask et al. · 2006 [cited by applicant]
US 7105871B2 · Or-Bach et al. · 2006 [cited by applicant]
US 7109092B2 · Tong · 2006 [cited by applicant]
US 7110629B2 · Bjorkman et al. · 2006 [cited by applicant]
US 7111149B2 · Eilert · 2006 [cited by applicant]
US 7112815B2 · Prall · 2006 [cited by applicant]
US 7115945B2 · Lee et al. · 2006 [cited by applicant]
US 7115966B2 · Ido et al. · 2006 [cited by applicant]
US 7141853B2 · Campbell et al. · 2006 [cited by applicant]
US 7148119B1 · Sakaguchi et al. · 2006 [cited by applicant]
US 7157787B2 · Kim et al. · 2007 [cited by applicant]
US 7157937B2 · Apostol et al. · 2007 [cited by applicant]
US 7166520B1 · Henley · 2007 [cited by applicant]
US 7170807B2 · Fazan et al. · 2007 [cited by applicant]
US 7173369B2 · Forrest et al. · 2007 [cited by applicant]
US 7180091B2 · Yamazaki et al. · 2007 [cited by applicant]
US 7180379B1 · Hopper et al. · 2007 [cited by applicant]
US 7183611B2 · Bhattacharyya · 2007 [cited by applicant]
US 7189489B2 · Kunimoto et al. · 2007 [cited by applicant]
US 7205204B2 · Ogawa et al. · 2007 [cited by applicant]
US 7209384B1 · Kim · 2007 [cited by applicant]
US 7217636B1 · Atanackovic · 2007 [cited by applicant]
US 7223612B2 · Sarma · 2007 [cited by applicant]
US 7242012B2 · Leedy · 2007 [cited by applicant]
US 7245002B2 · Akino et al. · 2007 [cited by applicant]
US 7256104B2 · Ito et al. · 2007 [cited by applicant]
US 7259091B2 · Schuehrer et al. · 2007 [cited by applicant]
US 7265421B2 · Madurawe · 2007 [cited by applicant]
US 7271420B2 · Cao · 2007 [cited by applicant]
US 7274207B2 · Sugawara et al. · 2007 [cited by applicant]
US 7282951B2 · Huppenthal et al. · 2007 [cited by applicant]
US 7284226B1 · Kondapalli · 2007 [cited by applicant]
US 7296201B2 · Abramovici · 2007 [cited by applicant]
US 7304355B2 · Zhang · 2007 [cited by applicant]
US 7312109B2 · Madurawe · 2007 [cited by applicant]
US 7312487B2 · Alam et al. · 2007 [cited by applicant]
US 7314788B2 · Shaw · 2008 [cited by applicant]
US 7335573B2 · Takayama et al. · 2008 [cited by applicant]
US 7337425B2 · Kirk · 2008 [cited by applicant]
US 7338884B2 · Shimoto et al. · 2008 [cited by applicant]
US 7342415B2 · Teig et al. · 2008 [cited by applicant]
US 7351644B2 · Henley · 2008 [cited by applicant]
US 7358601B1 · Plants et al. · 2008 [cited by applicant]
US 7362133B2 · Madurawe · 2008 [cited by applicant]
US 7369435B2 · Forbes · 2008 [cited by applicant]
US 7371660B2 · Henley et al. · 2008 [cited by applicant]
US 7378702B2 · Lee · 2008 [cited by applicant]
US 7381989B2 · Kim · 2008 [cited by applicant]
US 7385283B2 · Wu · 2008 [cited by applicant]
US 7393722B1 · Issaq et al. · 2008 [cited by applicant]
US 7402483B2 · Yu et al. · 2008 [cited by applicant]
US 7402897B2 · Leedy · 2008 [cited by applicant]
US 7419844B2 · Lee et al. · 2008 [cited by applicant]
US 7432185B2 · Kim · 2008 [cited by applicant]
US 7436027B2 · Ogawa et al. · 2008 [cited by applicant]
US 7439773B2 · Or-Bach et al. · 2008 [cited by applicant]
US 7446563B2 · Madurawe · 2008 [cited by applicant]
US 7459752B2 · Doris et al. · 2008 [cited by applicant]
US 7459763B1 · Issaq et al. · 2008 [cited by applicant]
US 7459772B2 · Speers · 2008 [cited by applicant]
US 7463062B2 · Or-Bach et al. · 2008 [cited by applicant]
US 7463502B2 · Stipe · 2008 [cited by applicant]
US 7470142B2 · Lee · 2008 [cited by applicant]
US 7470598B2 · Lee · 2008 [cited by applicant]
US 7476939B2 · Okhonin et al. · 2009 [cited by applicant]
US 7477540B2 · Okhonin et al. · 2009 [cited by applicant]
US 7485968B2 · Enquist et al. · 2009 [cited by applicant]
US 7486563B2 · Waller et al. · 2009 [cited by applicant]
US 7488980B2 · Takafuji et al. · 2009 [cited by applicant]
US 7492632B2 · Carman · 2009 [cited by applicant]
US 7495473B2 · McCollum et al. · 2009 [cited by applicant]
US 7498675B2 · Farnworth et al. · 2009 [cited by applicant]
US 7499352B2 · Singh · 2009 [cited by applicant]
US 7499358B2 · Bauser · 2009 [cited by applicant]
US 7508034B2 · Takafuji et al. · 2009 [cited by applicant]
US 7514748B2 · Fazan et al. · 2009 [cited by applicant]
US 7521806B2 · Trezza · 2009 [cited by applicant]
US 7525186B2 · Kim et al. · 2009 [cited by applicant]
US 7535089B2 · Fitzgerald · 2009 [cited by applicant]
US 7541616B2 · Fazan et al. · 2009 [cited by applicant]
US 7547589B2 · Iriguchi · 2009 [cited by applicant]
US 7553745B2 · Lim · 2009 [cited by applicant]
US 7557367B2 · Rogers et al. · 2009 [cited by applicant]
US 7558141B2 · Katsumata et al. · 2009 [cited by applicant]
US 7563659B2 · Kwon et al. · 2009 [cited by applicant]
US 7566855B2 · Olsen et al. · 2009 [cited by applicant]
US 7566974B2 · Konevecki · 2009 [cited by applicant]
US 7586778B2 · Ho et al. · 2009 [cited by applicant]
US 7589375B2 · Jang et al. · 2009 [cited by applicant]
US 7608848B2 · Ho et al. · 2009 [cited by applicant]
US 7612411B2 · Walker · 2009 [cited by applicant]
US 7615462B2 · Kim et al. · 2009 [cited by applicant]
US 7622367B1 · Nuzzo et al. · 2009 [cited by applicant]
US 7632738B2 · Lee · 2009 [cited by applicant]
US 7633162B2 · Lee · 2009 [cited by applicant]
US 7666723B2 · Frank et al. · 2010 [cited by applicant]
US 7670912B2 · Yeo · 2010 [cited by applicant]
US 7671371B2 · Lee · 2010 [cited by applicant]
US 7671460B2 · Lauxtermann et al. · 2010 [cited by applicant]
US 7674687B2 · Henley · 2010 [cited by applicant]
US 7687372B2 · Jain · 2010 [cited by applicant]
US 7687872B2 · Cazaux · 2010 [cited by applicant]
US 7688619B2 · Lung et al. · 2010 [cited by applicant]
US 7692202B2 · Bensch · 2010 [cited by applicant]
US 7692448B2 · Solomon · 2010 [cited by applicant]
US 7692944B2 · Bernstein et al. · 2010 [cited by applicant]
US 7697316B2 · Lai et al. · 2010 [cited by applicant]
US 7709932B2 · Nemoto et al. · 2010 [cited by applicant]
US 7718508B2 · Lee · 2010 [cited by applicant]
US 7719876B2 · Chevallier · 2010 [cited by applicant]
US 7723207B2 · Alam et al. · 2010 [cited by applicant]
US 7728326B2 · Yamazaki et al. · 2010 [cited by applicant]
US 7732301B1 · Pinnington et al. · 2010 [cited by applicant]
US 7741673B2 · Tak et al. · 2010 [cited by applicant]
US 7742331B2 · Watanabe · 2010 [cited by applicant]
US 7745250B2 · Han · 2010 [cited by applicant]
US 7749884B2 · Mathew et al. · 2010 [cited by applicant]
US 7750669B2 · Spangaro · 2010 [cited by applicant]
US 7755622B2 · Yvon · 2010 [cited by applicant]
US 7759043B2 · Tanabe et al. · 2010 [cited by applicant]
US 7768115B2 · Lee et al. · 2010 [cited by applicant]
US 7772039B2 · Kerber · 2010 [cited by applicant]
US 7772096B2 · DeSouza et al. · 2010 [cited by applicant]
US 7774735B1 · Sood · 2010 [cited by applicant]
US 7776715B2 · Wells et al. · 2010 [cited by applicant]
US 7777330B2 · Pelley et al. · 2010 [cited by applicant]
US 7786460B2 · Lung et al. · 2010 [cited by applicant]
US 7786535B2 · Abou-Khalil et al. · 2010 [cited by applicant]
US 7790524B2 · Abadeer et al. · 2010 [cited by applicant]
US 7795619B2 · Hara · 2010 [cited by applicant]
US 7799675B2 · Lee · 2010 [cited by applicant]
US 7800099B2 · Yamazaki et al. · 2010 [cited by applicant]
US 7800148B2 · Lee et al. · 2010 [cited by applicant]
US 7800163B2 · Izumi et al. · 2010 [cited by applicant]
US 7800199B2 · Oh · 2010 [cited by examiner]
US 7816721B2 · Yamazaki · 2010 [cited by applicant]
US 7843718B2 · Koh et al. · 2010 [cited by applicant]
US 7846814B2 · Lee · 2010 [cited by applicant]
US 7863095B2 · Sasaki et al. · 2011 [cited by applicant]
US 7864568B2 · Fujisaki et al. · 2011 [cited by applicant]
US 7867822B2 · Lee · 2011 [cited by applicant]
US 7888764B2 · Lee · 2011 [cited by applicant]
US 7910432B2 · Tanaka et al. · 2011 [cited by applicant]
US 7915164B2 · Konevecki et al. · 2011 [cited by applicant]
US 7919845B2 · Karp · 2011 [cited by applicant]
US 7965102B1 · Bauer et al. · 2011 [cited by applicant]
US 7968965B2 · Kim · 2011 [cited by applicant]
US 7969193B1 · Wu et al. · 2011 [cited by applicant]
US 7973314B2 · Yang · 2011 [cited by applicant]
US 7982250B2 · Yamazaki et al. · 2011 [cited by applicant]
US 7983065B2 · Samachisa · 2011 [cited by applicant]
US 8008732B2 · Kiyotoshi · 2011 [cited by applicant]
US 8013399B2 · Thomas et al. · 2011 [cited by applicant]
US 8014166B2 · Yazdani · 2011 [cited by applicant]
US 8014195B2 · Okhonin et al. · 2011 [cited by applicant]
US 8022493B2 · Bang · 2011 [cited by applicant]
US 8030780B2 · Kirby et al. · 2011 [cited by applicant]
US 8031544B2 · Kim et al. · 2011 [cited by applicant]
US 8032857B2 · McIlrath · 2011 [cited by applicant]
US 8044448B2 · Kamigaichi et al. · 2011 [cited by applicant]
US 8044464B2 · Yamazaki et al. · 2011 [cited by applicant]
US 8068364B2 · Maejima · 2011 [cited by applicant]
US 8106520B2 · Keeth et al. · 2012 [cited by applicant]
US 8107276B2 · Breitwisch et al. · 2012 [cited by applicant]
US 8129256B2 · Farooq et al. · 2012 [cited by applicant]
US 8129258B2 · Hosier et al. · 2012 [cited by applicant]
Cited By (1)
US 12,469,735