3D NAND memory device and method of forming the same
A 3D-NAND memory device is provided. The memory device includes a substrate, a bottom select gate (BSG) disposed over the substrate, a plurality of word lines positioned over the BSG with a staircase configuration and a plurality of insulating layers disposed between the substrate, the BSG, and the plurality of word lines. In the disclosed memory device, one or more first dielectric trenches are formed in the BSG and extend in a length direction of the substrate to separate the BSG into a plurality of sub-BSGs. In addition, one or more common source regions are formed over the substrate and extend in the length direction of the substrate. The one or more common source regions further extend through the BSG, the plurality of word lines and the plurality of insulating layers.
1. A memory device, comprising:
a bottom select gate (BSG);
a word line positioned over the BSG with a staircase configuration;
a top select gate (TSG) positioned over the word line;
an insulating layer disposed between the BSG, the word line, and the TSG;
a first dielectric trench formed in the BSG and separate the BSG into a plurality of sub-BSGs; and
a second dielectric trench formed in the TSG and separating the TSG into a plurality of sub-TSGs; wherein:
the first dielectric trench and the second dielectric trench are aligned with each other in a height direction of the insulating layer and are spaced apart by the word line.
2. The memory device of claim 1 , further comprising a common source region, wherein the common source region extends through the BSG, the word line and the insulating layer.
3. The memory device of claim 2 , wherein the common source region further extends through the TSG.
4. The memory device of claim 1 , further comprising a channel structure, wherein the channel structure extends through the BSG, the word line, the insulating layer and the TSG.
5. The memory device of claim 1 , further comprising a dummy channel structure, wherein the dummy channel structure extends through the BSG, the word line and the insulating layer.
6. The memory device of claim 2 , wherein:
the first dielectric trench and the common source region are alternatively disposed in a width direction of the insulating layer, and
the second dielectric trench and the common source region are alternatively disposed in the width direction of the insulating layer.
7. A memory device, comprising:
a substrate;
a bottom select gate (BSG) positioned over the substrate;
a word line positioned over the BSG with a staircase configuration;
an insulating layer disposed between the substrate, the BSG and the word line;
a first dielectric trench formed in the BSG and separating the BSG into a plurality of sub-BSGs;
a common source region formed over the substrate, wherein the first dielectric trench and the common source region are alternatively disposed in a width direction of the substrate,
a top select gate (TSG) positioned over the word line, the TSG and the word line being spaced apart by the insulating layer; and
a second dielectric trench formed in the TSG and separate the TSG into a plurality of sub-TSGs.
8. The memory device of claim 7 , wherein the first dielectric trench and the second dielectric trench are aligned with each other in a height direction of the substrate.
9. The memory device of claim 7 , wherein the common source region extends through the BSG, the word line, the insulating layer and the TSG.
10. The memory device of claim 7 , further comprising a channel structure, wherein the channel structure extends through the BSG, the word line, the insulating layer and the TSG.
11. The memory device of claim 7 , further comprising a dummy channel structure, wherein the dummy channel structure extends through the BSG, the word line and the insulating layer.
12. The memory device of claim 7 , wherein the second dielectric trench and the common source region are alternatively disposed in the width direction of the substrate.
13. A memory device, comprising:
a bottom select gate (BSG);
a top select gate (TSG) positioned over the BSG;
a first dielectric trench formed in the BSG and extending in a first direction to separate the BSG into a plurality of sub-BSGs;
a second dielectric trench formed in the TSG and extending in the first direction to separate the TSG into a plurality of sub-TSGs; and
a common source region extending in the first direction, wherein:
the memory device is divided into a first sub-block, a second sub-block and a third sub-block by the common source region, the first dielectric trench and the second dielectric trench, and
a size of the second sub-block in a second direction perpendicular to the first direction is larger than the first sub-block and the third sub-block.
14. The memory device of claim 13 , further comprising:
a word line positioned between the BSG and the TSG; and
an insulating layer disposed between the BSG, the word line, and the TSG, wherein:
the common source region extends through the BSG, the word line, the insulating layer and the TSG.
15. The memory device of claim 13 , wherein:
the first dielectric trench and the common source region are alternatively disposed in the second direction, and
the second dielectric trench and the common source region are alternatively disposed in the second direction.
16. The memory device of claim 14 , wherein the first dielectric trench and the second dielectric trench are aligned with each other in a height direction of the insulating layer.
17. The memory device of claim 13 , wherein the second sub-block is positioned between the first sub-block and the third sub-block in the second direction.
18. The memory device of claim 17 , wherein the common source region comprises a first common source region, a third common source region and a second common source region positioned between the first common source region and the third common source region in the second direction, wherein the second common source region comprises a H-Cut.
19. The memory device of claim 18 , wherein the second sub-block comprises a first portion and a second portion, wherein the first portion and the second portion are connected with each other through the H-Cut.