IP Library › Granted Patent US 12,308,157
Granted Patent B2
US 12,308,157 · App. 17/985,715 · Granted May 20, 2025

High density coil design and process

Inventors: John L. Schumann (Litchfield, MN); Nole D. German (Hutchinson, MN); Trent A. Johnson (Hutchinson, MN); Duane M. Jelkin (Hutchinson, MN); Matthew S. Lang (Excelsior, MN); Ryan N. Ruzicka (Waconia, MN); Forrest A. Cravens (Hutchinson, MN); Todd A. Peter (Darwin, MN); Zachary A. Pokornowski (Cokato, MN)
Assignee: Hutchinson Technology Incorporated
H01F27/2804C25D3/38C25D7/00G06K19/0723G11B5/484H01F41/041H05K1/111H05K1/181H01F2027/2819H05K2201/1003H05K2201/10363H05K2201/10522
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Quick Facts
Patent No.
US 12,308,157
App. No.
17/985,715
Granted
May 20, 2025
Kind
B2
Abstract

Devices including a substrate and a plurality of coil portions disposed on the substrate. The plurality of coil portions electrically coupled to form a coil structure.

Claims (11)

1. A coil structure comprising:

a substrate including at least a first solder joint and a second solder joint; and

a plurality of surface mount circuits including a first surface mount circuit, a second surface mount circuit, and a third surface mount circuit, wherein the first solder joint is formed to provide a first electrical contact between the first surface mount circuit and the second surface mount circuit, and the second solder joint is formed to provide a second electrical contact between the second surface mount circuit and the third surface mount circuit,

wherein each of the surface mount circuits are disposed on separate portions of the substrate and electrically coupled to each other through at least the first solder joint and the second solder joint, and wherein each of the first solder joint and the second solder joint include a substrate solder pad and a surface mount circuit solder pad, wherein the substrate solder pad is formed by creating a void created in the substrate to expose a portion of a conductive layer disposed adjacent to the substrate, and wherein solder is disposed over the substrate solder pad and the circuit solder pad.

2. The coil structure of claim 1 , wherein the substrate is a flexible printed circuit (FPC).

3. The coil structure of claim 1 , wherein the substrate is a circuit.

4. The coil structure of claim 1 , wherein at least one of the plurality of surface mount circuits is a surface mount coil.

5. The coil structure of claim 1 , wherein the substrate includes a center portion coupled to an outer portion by one or more connecting portions, at least one of the plurality of surface mount circuits disposed on the center portion.

6. The coil structure of claim 5 , wherein one or more terminal pads are disposed on the outer portion and the one or more terminal pads are coupled with at least one of the plurality of surface mount circuits disposed on the center portion by one or more traces disposed in part on at least one of the one or more connecting portions.

7. The coil structure of claim 1 , wherein the substrate includes at least one out-of-plane portion such that the substrate is non-planar.

8. The coil structure of claim 7 , wherein at least one of the plurality of surface mount circuits is disposed on the out-of-plane portion.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 11, 2022
From: SCHUMANN, JOHN L.; GERMAN, NOLE D.; JOHNSON, TRENT A.; JELKIN, DUANE M.; LANG, MATTHEW S.; RUZICKA, RYAN N.; CRAVENS, FORREST A.; PETER, TODD A.; POKORNOWSKI, ZACHARY A.
To: HUTCHINSON TECHNOLOGY INCORPORATED
Reel/Frame 061743/0934 →
Continuity (5)
Continuation 16693125 · Nov 22, 2019
Continuation In Part 15817049 · Nov 17, 2017
Provisional Application 62774027 · Nov 30, 2018
Provisional Application 62423995 · Nov 18, 2016
Related Publication 20230071114A1 · Mar 9, 2023
References Cited (188)
US 4315985A · Castellani et al. · 1982 [cited by applicant]
US 4596762A · Gruner · 1986 [cited by applicant]
US 5209817A · Ahmad et al. · 1993 [cited by applicant]
US 5867347A · Knight et al. · 1999 [cited by applicant]
US 6239979B1 · Ruff · 2001 [cited by applicant]
US 6423200B1 · Hymes · 2002 [cited by applicant]
US 6600404B1 · Kajino · 2003 [cited by applicant]
US 6791845B2 · Belopolsky · 2004 [cited by applicant]
US 7027141B2 · Girard et al. · 2006 [cited by applicant]
US 7176773B2 · Shoji · 2007 [cited by applicant]
US 7384531B1 · Peltoma et al. · 2008 [cited by applicant]
US 7388733B2 · Swanson et al. · 2008 [cited by applicant]
US 7697237B1 · Danielson · 2010 [cited by applicant]
US 7929252B1 · Hentges et al. · 2011 [cited by applicant]
US 8144430B2 · Hentges et al. · 2012 [cited by applicant]
US 8169746B1 · Rice et al. · 2012 [cited by applicant]
US 8344842B1 · Luzanov · 2013 [cited by applicant]
US 8513124B1 · Ponnuswamy et al. · 2013 [cited by applicant]
US 8885299B1 · Bennin et al. · 2014 [cited by applicant]
US 9366879B1 · Miller · 2016 [cited by applicant]
US 9945042B2 · Cha et al. · 2018 [cited by applicant]
US 9976224B2 · Jeong et al. · 2018 [cited by applicant]
US 10109409B2 · Lee et al. · 2018 [cited by applicant]
US 10640879B2 · Riemer et al. · 2020 [cited by applicant]
US 11387033B2 · Riemer et al. · 2022 [cited by applicant]
US 11521785B2 · Schumann et al. · 2022 [cited by applicant]
US 20020112963A1 · Nakano et al. · 2002 [cited by applicant]
US 20030188886A1 · Fey et al. · 2003 [cited by applicant]
US 20040159257A1 · Mathieu · 2004 [cited by applicant]
US 20040164835A1 · Shoji · 2004 [cited by applicant]
US 20040183743A1 · Reasoner et al. · 2004 [cited by applicant]
US 20050141138A1 · Shiraishi et al. · 2005 [cited by applicant]
US 20050173152A1 · Post et al. · 2005 [cited by applicant]
US 20050263389A1 · Gung et al. · 2005 [cited by applicant]
US 20060027393A1 · Aonuma et al. · 2006 [cited by applicant]
US 20060118905A1 · Himori et al. · 2006 [cited by applicant]
US 20070164867A1 · Kawai · 2007 [cited by examiner]
US 20080007473A1 · Yosui et al. · 2008 [cited by applicant]
US 20080020641A1 · Hiew et al. · 2008 [cited by applicant]
US 20090096092A1 · Patel · 2009 [cited by applicant]
US 20100051334A1 · Ho et al. · 2010 [cited by applicant]
US 20100132997A1 · Hando · 2010 [cited by applicant]
US 20100265078A1 · Friedman · 2010 [cited by applicant]
US 20100271161A1 · Yan et al. · 2010 [cited by applicant]
US 20120098728A1 · Kato et al. · 2012 [cited by applicant]
US 20120168921A1 · Tan et al. · 2012 [cited by applicant]
US 20130222101A1 · Ito et al. · 2013 [cited by applicant]
US 20130333820A1 · Sherrer · 2013 [cited by applicant]
US 20140043129A1 · Wi et al. · 2014 [cited by applicant]
US 20140104133A1 · Finn et al. · 2014 [cited by applicant]
US 20140141548A1 · Mostoller et al. · 2014 [cited by applicant]
US 20140146649A1 · Bennin et al. · 2014 [cited by applicant]
US 20140183751A1 · Yoshioka et al. · 2014 [cited by applicant]
US 20140239457A1 · Daubenspeck et al. · 2014 [cited by applicant]
US 20140241574A1 · Wang et al. · 2014 [cited by applicant]
US 20140247101A1 · Cha et al. · 2014 [cited by applicant]
US 20150028107A1 · Fischer et al. · 2015 [cited by applicant]
US 20150035640A1 · Wang et al. · 2015 [cited by applicant]
US 20150036540A1 · Kasslin et al. · 2015 [cited by applicant]
US 20150047888A1 · Yoon · 2015 [cited by examiner]
US 20150170823A1 · Jeong et al. · 2015 [cited by applicant]
US 20150270053A1 · Cha et al. · 2015 [cited by applicant]
US 20150303065A1 · Buckalew et al. · 2015 [cited by applicant]
US 20160163444A1 · Choi et al. · 2016 [cited by applicant]
US 20160167958A1 · Shkel et al. · 2016 [cited by applicant]
US 20160293320A1 · Kim et al. · 2016 [cited by applicant]
US 20170150608A1 · Yoon et al. · 2017 [cited by applicant]
US 20180054900A1 · Ueda et al. · 2018 [cited by applicant]
US 20180211762A1 · Jung et al. · 2018 [cited by applicant]
US 20190082542A1 · Yosui et al. · 2019 [cited by applicant]
US 20200232112A1 · Riemer et al. · 2020 [cited by applicant]
US 20210336197A1 · Sun · 2021 [cited by applicant]
US 20220351893A1 · Riemer et al. · 2022 [cited by applicant]
US 20240170208A1 · Riemer et al. · 2024 [cited by applicant]
CN 1528109A · 2004 [cited by applicant]
CN 1258777C · 2006 [cited by applicant]
CN 201051498Y · 2008 [cited by applicant]
CN 104347262A · 2015 [cited by applicant]
CN 105097187A · 2015 [cited by applicant]
CN 105316714A · 2016 [cited by applicant]
CN 206272920U · 2017 [cited by applicant]
CN 110140203A · 2019 [cited by applicant]
EP 0232037A2 · 1987 [cited by applicant]
EP 1648208A1 · 2006 [cited by applicant]
JP 60230993A · 1985 [cited by applicant]
JP 644091A · 1989 [cited by applicant]
JP 3169249A · 1991 [cited by applicant]
JP 4137405A · 1992 [cited by applicant]
JP 548247A · 1993 [cited by applicant]
JP 11113231A · 1999 [cited by applicant]
JP 11259883A · 1999 [cited by applicant]
JP 2005236158A · 2005 [cited by applicant]
JP 2008191266A · 2008 [cited by applicant]
JP 201062325A · 2010 [cited by applicant]
JP 201067317A · 2010 [cited by applicant]
JP 2010118367A · 2010 [cited by applicant]
JP 201182302A · 2011 [cited by applicant]
JP 201214754A · 2012 [cited by applicant]
JP 2012221518A · 2012 [cited by applicant]
JP 2013228504A · 2013 [cited by applicant]
JP 201449170A · 2014 [cited by applicant]
JP 201480674A · 2014 [cited by applicant]
JP 2015138054A · 2015 [cited by applicant]
JP 5776867B1 · 2015 [cited by applicant]
JP 2015228477A · 2015 [cited by applicant]
JP 201672615A · 2016 [cited by applicant]
JP 2016192516A · 2016 [cited by applicant]
JP 2017227850A · 2017 [cited by applicant]
JP 2018113434A · 2018 [cited by applicant]
JP 2018121047A · 2018 [cited by applicant]
KR 20010092786A · 2001 [cited by applicant]
KR 1020040040443A · 2004 [cited by applicant]
KR 1020190082295A · 2019 [cited by applicant]
TW 201034546A · 2010 [cited by applicant]
WO 2015079773A1 · 2015 [cited by applicant]
WO 2018097112A1 · 2018 [cited by applicant]
WO WO2018094280A1 · 2018 [cited by applicant]
Andricacos, P.C. et al., “Damascene Copper Electroplating for Chip Interconnections”, IBM Journal of Research and Development, vol. 42, No. 5, pp. 567-574, Sep. 1998. [cited by applicant]
Moffat, T.P. et al., “Curvature Enhanced Adsorbate Coverage Mechanism for Bottom-Up Superfilling and Bump Control in Damascene Processing”, Electrochimica Acta, vol. 53, Issue 1, pp. 145-154, Nov. 2007. [cited by applicant]
Romankiw, L.T. et al., “Thin Film Magnetic Heads—Early Inventions and Their Ongoing Impact on Magnetic Storage and Electrochemistry”, ECS Transactions, vol. 50, Issue 10, pp. 3-17, 2012. [cited by applicant]
Vereecken, P.M., et al., “The Chemistry of Additives in Damascene Copper Plating”, IBM Journal of Research and Development, vol. 49, No. 1, pp. 3-18, Jan. 2005. [cited by applicant]
International Search Report and Written Opinion in International Application No. PCT/US2017/062416, mailed Jan. 25, 2018. [cited by applicant]
International Preliminary Report on Patentability in International Application No. PCT/US2017/062416 dated May 31, 2019. [cited by applicant]
Office Action in Chinese Application No. 201780082271.8, dated Sep. 15, 2022. [cited by applicant]
Notice of Reasons for Refusal in Japanese Application No. 2019-526467, dated Sep. 21, 2021. [cited by applicant]
Notice of Decision of Refusal in Japanese Application No. 2019-526467, dated Apr. 12, 2022. [cited by applicant]
Notice of Preliminary Rejection in Korean Application No. 10-2019-7016946, dated Jan. 2, 2022. [cited by applicant]
Notice of Final Rejection in Korean Application No. 10-2019-7016946, dated Nov. 22, 2022. [cited by applicant]
International Search Report and Written Opinion in International Application No. PCT/US2019/062885, mailed Feb. 7, 2020. [cited by applicant]
International Preliminary Report on Patentability in International Application No. PCT/US2019/062885, mailed Jun. 10, 2021. [cited by applicant]
International Search Report and Written Opinion in International Application No. PCT/US2019/062883, mailed Feb. 7, 2020. [cited by applicant]
International Preliminary Report on Patentability in International Application No. PCT/US2019/062883, mailed Jun. 10, 2021. [cited by applicant]
Office Action for U.S. Appl. No. 15/817,049 dated Apr. 3, 2019. [cited by applicant]
Office Action for U.S. Appl. No. 15/817,049 dated Jul. 18, 2019. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 15/817,049 dated Dec. 20, 2019. [cited by applicant]
Office Action for U.S. Appl. No. 16/693,169 dated Apr. 7, 2020. [cited by applicant]
Office Action for U.S. Appl. No. 16/693,169 dated Jul. 16, 2020. [cited by applicant]
Office Action for U.S. Appl. No. 16/693,169 dated Jan. 28, 2021. [cited by applicant]
Office Action for U.S. Appl. No. 16/693,169 dated Aug. 24, 2021. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 16/693,169 dated Mar. 9, 2022. [cited by applicant]
Office Action for U.S. Appl. No. 16/693,125 dated Mar. 23, 2020. [cited by applicant]
Office Action for U.S. Appl. No. 16/693,125 dated Jul. 16, 2020. [cited by applicant]
Office Action for U.S. Appl. No. 16/693,125 dated Jan. 28, 2021. [cited by applicant]
Office Action for U.S. Appl. No. 16/693,125 dated Aug. 24, 2021. [cited by applicant]
Office Action for U.S. Appl. No. 16/693,125 dated Feb. 14, 2022. [cited by applicant]
Notice of Allowance for U.S. Appl. No. 16/693,125 dated Aug. 3, 2022. [cited by applicant]
Office Action for U.S. Appl. No. 16/827,583 dated Dec. 24, 2020. [cited by applicant]
Office Action for U.S. Appl. No. 16/827,583 dated Sep. 20, 2021. [cited by applicant]
Office Action for U.S. Appl. No. 16/827,583 dated Apr. 12, 2022. [cited by applicant]
Office Action for U.S. Appl. No. 16/827,583 dated Oct. 20, 2022. [cited by applicant]
Office Action in Chinese Application No. 201780082271.8, dated Apr. 14, 2023. [cited by applicant]
Notice of Final Rejection in Korean Application No. 10-2019-7016946, dated Mar. 21, 2023. [cited by applicant]
Office Action in Chinese Application No. 201980089827.5, dated Mar. 3, 2023. [cited by applicant]
Office Action in Chinese Application No. 201780082271.8, dated Jul. 29, 2023. [cited by applicant]
Office Action in Taiwan Application No. 108143005, dated Jul. 14, 2023. [cited by applicant]
Notice of Reasons for Refusal in Japanese Application No. 2022-127306, dated Jun. 6, 2023. [cited by applicant]
Office Action for U.S. Appl. No. 16/827,583 dated Jun. 14, 2023. [cited by applicant]
Notice of Reasons for Refusal in Japanese Application No. 2021-529402, dated Sep. 5, 2023. [cited by applicant]
Notice of Reasons for Refusal in Japanese Application No. 2019-526467, dated Oct. 3, 2023. [cited by applicant]
Office Action in Taiwan Application No. 108143004, dated Sep. 5, 2023. [cited by applicant]
Office Action in Chinese Application No. 201980089827.5, dated Oct. 16, 2023. [cited by applicant]
Notice of Reasons for Rejection in Japanese Application No. 2021-531026, dated Oct. 3, 2023. [cited by applicant]
Notice of Reasons for Refusal in Japanese Application No. 2022-127306, dated Oct. 24, 2023. [cited by applicant]
Office Action for U.S. Appl. No. 16/827,583 dated Dec. 11, 2023. [cited by applicant]
Notification of Reexamination in Chinese Application No. 201780082271.8, dated Apr. 19, 2024. [cited by applicant]
Notice of Reasons for Refusal in Japanese Application No. 2019-526467, dated Jun. 11, 2024. [cited by applicant]
Notice of Allowance in Japanese Application No. 2021-529402, dated Apr. 30, 2024. [cited by applicant]
Office Action in Chinese Application No. 201980089827.5, dated Mar. 22, 2024. [cited by applicant]
Notice of Allowance in Philippines Application No. 1-2021-551247, dated May 23, 2024. [cited by applicant]
Rejection Decision in Taiwan Application No. 108143005, dated Apr. 16, 2024. [cited by applicant]
Notice of Decision of Refusal in Japanese Application No. 2022-127306, dated Apr. 23, 2024. [cited by applicant]
Office Action for U.S. Appl. No. 16/827,583 dated May 14, 2024. [cited by applicant]
Office Action in Chinese Application No. 201980089815.2, dated Dec. 26, 2023. [cited by applicant]
Notice of Preliminary Rejection in Korean Application No. 10-2021-7019812, dated Mar. 4, 2024. [cited by applicant]
Office Action in Taiwan Application No. 108143004, dated Feb. 6, 2024. [cited by applicant]
Notice of Reasons for Rejection in Japanese Application No. 2021-531026, dated Mar. 26, 2024. [cited by applicant]
Notice of Preliminary Rejection in Korean Application No. 10-2021-7020023, dated Mar. 4, 2024. [cited by applicant]
Substantive Examination Report in Philippines Application No. 1-2021-551247, dated Mar. 5, 2024. [cited by applicant]
Notice of Preliminary Rejection in Korean Application No. 10-2023-7028302, dated Mar. 10, 2024. [cited by applicant]
International Search Report and Written Opinion in International Application No. PCT/US2023/079929, mailed Mar. 27, 2024. [cited by applicant]
Decision of Reexamination in Chinese Application No. 201780082271.8, dated Jun. 26, 2024. [cited by applicant]
Office Action in Chinese Application No. 201980089815.2, dated Jul. 26, 2024. [cited by applicant]
Notice of Allowance in Japanese Application No. 2021-531026, dated Oct. 8, 2024. [cited by applicant]
Notice of Allowance in Korean Application No. 10-2021-7020023, dated Oct. 8, 2024. [cited by applicant]
Office Action in Taiwan Application No. 112140035, dated May 31, 2024. [cited by applicant]
Office Action for U.S. Appl. No. 17/862,183 dated Aug. 5, 2024. [cited by applicant]
Office Action for U.S. Appl. No. 16/827,583 dated Nov. 18, 2024. [cited by applicant]
Notice of Allowance in Korean Application No. 10-2023-7028302, dated Dec. 27, 2024. [cited by applicant]