Granted Patent B2

US 12,324,276 · App. 18/423,986 · Granted Jun 3, 2025

Inventor: Petar Atanackovic (Henley Beach South, AU)

Assignee: Silanna UV Technologies Pte Ltd

H10H20/822H01L21/02178H01L21/02192H01L21/02194H01L21/0228H01L21/02458H01L21/02507H01L23/66H01S5/34H10D30/015H10D30/6755H10D62/80H10D62/8161H10D62/82H10D62/8503H10D64/691H10H20/01335H10H20/811H10H20/812H10H20/817H10H20/818H10H20/857H10H29/10H01L2223/6627H10D30/47H10D30/475

Abstract

Claims (27)

1. A transistor, comprising:

a substrate;

a channel layer comprising a first epitaxial semiconductor layer on the substrate, the first epitaxial semiconductor layer comprising a first polar oxide material;

a gate layer comprising a second epitaxial semiconductor layer on the first epitaxial semiconductor layer, the second epitaxial semiconductor layer comprising a second polar oxide material;

a source electrode and a drain electrode coupled to the channel layer; and

a gate electrode coupled to the gate layer,

wherein the first polar oxide material and the second polar oxide material comprise cation-polar surfaces oriented towards or away from the substrate; and

wherein the second polar oxide material comprises a wider bandgap than the first polar oxide material.

2. The transistor of claim 1 , wherein the first polar oxide material comprises a cubic crystal symmetry.

3. The transistor of claim 1 , wherein the first polar oxide material comprises an orthorhombic crystal symmetry.

4. The transistor of claim 1 , wherein the first polar oxide material comprises a tetragonal crystal symmetry.

5. The transistor of claim 1 , wherein the first polar oxide material comprises a trigonal crystal symmetry.

6. The transistor of claim 1 , wherein the first polar oxide material and the second polar oxide material each comprise an orthorhombic crystal symmetry.

7. The transistor of claim 1 , wherein the first polar oxide material comprises a gradient in composition.

8. The transistor of claim 1 , wherein the first polar oxide material comprises a strain.

9. The transistor of claim 1 , wherein the second polar oxide material comprises a cubic, an orthorhombic, a tetragonal, or a trigonal crystal symmetry.

10. The transistor of claim 1 , wherein the first polar oxide material comprises (Al x Ga 1-x ) y O z , wherein 0≤x≤1, 1≤y≤3, and 2≤z≤4, and wherein the (Al x Ga 1-x ) y O z comprises a Pna21 space group.

11. The transistor of claim 10 , wherein the (Al x Ga 1-x ) y O z comprises a gradient in composition.

12. The transistor of claim 10 , wherein the (Al x Ga 1-x ) y O z comprises a strain.

13. The transistor of claim 10 , wherein the substrate comprises α-SiO 2 .

14. The transistor of claim 10 , wherein the substrate comprises AlN.

15. The transistor of claim 10 , wherein the substrate comprises LiGaO 2 .

16. The transistor of claim 10 , wherein the substrate comprises KTaO 3 .

17. The transistor of claim 10 , wherein the substrate comprises Al.

18. The transistor of claim 1 , wherein the first polar oxide material comprises (Al x1 Ga 1-x1 ) 2 O 3 , wherein 0≤x1≤1, wherein the (Al x1 Ga 1-x1 ) 2 O 3 comprises a Pna21 space group, wherein the second polar oxide material comprises (Al x2 Ga 1-x2 ) 2 O 3 , wherein 0≤x2≤1, wherein the (Al x2 Ga 1-x2 ) 2 O 3 comprises a Pna21 space group, and wherein x1 does not equal x2.

19. The transistor of claim 1 , wherein the first polar oxide material comprises Ga 2 O 3 , wherein the Ga 2 O 3 comprises a Pna21 space group, wherein the second polar oxide material comprises (Al 0.5 Ga 0.5 ) 2 O 3 , and wherein the (Al 0.5 Ga 0.5 ) 2 O 3 comprises a Pna21 space group.

20. The transistor of claim 1 , wherein the first polar oxide material comprises Li(Al x Ga 1-x )O 2 , wherein 0≤x≤1, and wherein the Li(Al x Ga 1-x )O 2 comprises a Pna21 or a P421212 space group.

Assignments (2)

Continuity (6)

References Cited (216)