Ceramic electronic component and method of manufacturing the same
A ceramic electronic component includes a body including a dielectric layer and an internal electrode, and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer includes a plurality of dielectric grains, and at least one of the plurality of dielectric grains has a core-dual shell structure having a core and a dual shell. The dual shell includes a first shell surrounding at least a portion of the core, and a second shell surrounding at least a portion of the first shell, and a concentration of a rare earth element included in the second shell is more than 1.3 times to less than 3.8 times a concentration of a rare earth element included in the first shell.
1. A ceramic electronic component comprising:
a body including a dielectric layer and an internal electrode; and
an external electrode disposed on the body and connected to the internal electrode,
wherein the dielectric layer comprises a plurality of dielectric grains,
wherein at least one of the plurality of dielectric grains has a core-dual shell structure having a core and a dual shell,
wherein the dual shell comprises a first shell surrounding at least a portion of the core, and a second shell surrounding at least a portion of the first shell, and
the first shell in the core-dual shell structure is disposed to cover at least 90 area % of a surface of the core.
2. The ceramic electronic component according to claim 1 , wherein the second shell in the core-dual shell structure is disposed to cover at least 90 area % of a surface of the first shell.
3. The ceramic electronic component according to claim 1 ,
wherein a concentration of a rare earth element included in the second shell is more than 1.3 times to less than 3.8 times a concentration of a rare earth element included in the first shell.
4. The ceramic electronic component according to claim 1 , wherein a thickness of the second shell along a straight line connecting α and β is greater than 4% and less than 25% of a distance between α and β, where a denotes a center of the core-dual shell structure in a cross-section of the core-dual shell structure, and β denotes a point farthest from α on a surface of the second shell.
5. The ceramic electronic component according to claim 1 , wherein a thickness of the first shell along the straight line connecting α and β is 5 to 30% of the distance between α and β, where a denotes a center of the core-dual shell structure in a cross-section of the core-dual shell structure, and β denotes a point farthest from α on a surface of the second shell.
6. The ceramic electronic component according to claim 1 , wherein a thickness of the first shell along the straight line connecting α and β is 0.5 to 1.5 times the thickness of the second shell along the straight line connecting α and β, where α denotes a center of the core-dual shell structure in a cross-section of the core-dual shell structure, and β denotes a point farthest from α on a surface of the second shell.
7. The ceramic electronic component according to claim 1 , wherein a concentration of any rare earth element included in the core of the core-dual shell structure is 0.1 times or less than a concentration of the any rare earth element included in the first shell.
8. The ceramic electronic component according to claim 1 , wherein at least one of the plurality of dielectric grains has a core-shell structure.
9. The ceramic electronic component according to claim 1 , wherein a total number of dielectric grains having the core-dual shell structure in the dielectric layer is 50% or more of a total number of the plurality of dielectric grains in the dielectric layer.
10. The ceramic electronic component according to claim 1 , wherein the dielectric layer comprises one or more of BaTiO 3 , (Ba,Ca)(Ti,Ca)O 3 , (Ba,Ca)(Ti,Zr)O 3 , Ba(Ti,Zr)O 3 , or (Ba,Ca)(Ti,Sn)O 3 as a main component.
11. The ceramic electronic component according to claim 1 , wherein the dielectric layer has an amount of a rare earth element in a range of 0.1 to 15 moles, relative to 100 moles of the main component.
12. The ceramic electronic component according to claim 3 , wherein the rare earth element is one or more of lanthanum (La), yttrium (Y), actinium (Ac), cerium (Ce), praseodymium (Pr), neodium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), or ruthenium (Ru).
13. The ceramic electronic component according to claim 10 , wherein the dielectric layer further comprises one or more of Mn, Cr, Ba, Si, Al, Mg, or Zr as a minor component.
14. The ceramic electronic component according to claim 1 , wherein a thickness of at least one of the dielectric layer is 0.41 μm or less.
15. The ceramic electronic component according to claim 1 ,
further including a second internal electrode wherein the dielectric layer is interposed between the internal electrode and the second internal electrode,
wherein at least one of the dielectric grains having the core-dual shell structure is arranged in a region of the dielectric layer disposed 0.41 μm or less from both the internal electrode and the second internal electrode.
16. The ceramic electronic component according to claim 1 , wherein the first and second shells include different rare earth elements.