Epitaxial structures for fin-like field effect transistors
A semiconductor structure includes a first fin and a second fin protruding from a substrate, isolation features over the substrate to separate the first and the second fins, where a top surface of each of the first and the second fins is below a top surface of the isolation features, inner fin spacers disposed along inner sidewalls of the first and the second fins, where the inner fin spacers have a first height measured from a top surface of the isolation features, outer fin spacers disposed along outer sidewalls of the first and the second fins, where the outer fin spacers have a second height measured from the top surface of the isolation features that is less than the first height, and a source/drain (S/D) structure merging the first and the second fins, where the S/D structure includes an air gap having a top portion over the inner fin spacers.
1. A device comprising:
a first fin and a second fin protruding from a semiconductor substrate;
an isolation feature disposed over the semiconductor substrate to separate the first and the second fins, wherein a top surface of each of the first and second fins is above a top surface of the isolation feature;
inner fin spacers disposed along inner sidewalls of the first and second fins, wherein the inner fin spacers have a first height measured from the top surface of the isolation feature;
outer fin spacers disposed along outer sidewalls of the first and the second fins, wherein the outer fin spacers have a second height measured from the top surface of the isolation feature that is different than the first height; and
a source/drain (S/D) structure merging the first and the second fins, wherein the S/D structure defines an air gap having a top portion disposed over the inner fin spacers, wherein the S/D structure further includes a first epitaxial layer, a second epitaxial layer over the first epitaxial layer, and a third epitaxial layer over the second epitaxial layer, wherein the first, the second, and the third epitaxial layers include different dopant concentrations, wherein a portion of the isolation feature is exposed in the air gap,
wherein the second epitaxial layer and the third epitaxial layer comprise five outer facets,
wherein a top outer facet of the five outer facets is disposed over the first fin and second fin and is substantially flat.
2. The device of claim 1 , wherein the first epitaxial layer extends to at least the second height.
3. The device of claim 2 , wherein a top surface of one of the inner fin spacers is exposed to the air gap, the top surface of the one of the inner fin spacers faces away from the semiconductor substrate.
4. The device of claim 1 , wherein at least one of the inner fin spacers interfaces with the first epitaxial layer and the second epitaxial layer.
5. The device of claim 1 , wherein at least one of the first, second and third epitaxial layers includes a p-type dopant.
6. The device of claim 1 , wherein at least one of the first, second and third epitaxial layers includes an n-type dopant.
7. The device of claim 1 , wherein a portion of the top surface of the isolation feature is exposed to the air gap.
8. The device of claim 1 , wherein one of the first, second and third epitaxial layers include germanium.
9. A device comprising:
a first fin and a second fin disposed on a substrate;
an isolation feature disposed on the substrate and extending from the first fin to the second fin, wherein a top surface of at least one of the first and second fins is above a top surface of the isolation feature;
a first inner fin spacer disposed along a first inner sidewall of the first fin and a second inner fin spacer disposed along a second inner sidewall of the second fin, wherein the first and second inner fin spacers extend to a first height above the isolation feature;
a first outer fin spacer disposed along a first outer sidewall of the first fin and a second outer fin spacer disposed along a second outer sidewall of the second fin, wherein the first and second outer fin spacers extend to a second height above the isolation feature, wherein the first height is substantially greater than the second height;
a source/drain (S/D) structure disposed over the first and second fins, wherein the S/D structure includes a first epitaxial layer, a second epitaxial layer over the first epitaxial layer, and a third epitaxial layer over the second epitaxial layer, wherein the first, the second, and the third epitaxial layers include different dopant concentrations; and
an air gap including a first portion extending between the first and second inner fin spacers having a first width and a second portion extending over the first and second inner fin spacers having a second width that is different than the first width, wherein the source/drain structure, the first inner fin spacer and the second inner fin spacer are exposed to the air gap, wherein the first portion comprises a third height and the second portion comprises a fourth height, wherein a ratio of the fourth height to the third height is between about 1:3 and about 1:2.
10. The device of claim 9 , wherein the second width is wider than the first width.
11. The device of claim 9 , wherein the second portion of the air gap gradually decreases in width in a direction further away from the substrate.
12. The device of claim 9 , wherein the first epitaxial layer interfaces with the first and second fins.
13. The device of claim 9 , wherein the first inner fin spacer interfaces with the first fin, the first epitaxial layer and the second epitaxial layer.
14. The device of claim 9 , wherein the first outer fin spacer interfaces with the first fin and the first epitaxial layer.
15. The device of claim 9 , wherein the top surface of the isolation feature is exposed to the air gap.
16. A device comprising:
a first fin and a second fin disposed on a substrate;
an isolation feature disposed on the substrate and extending from the first fin to the second fin;
a first inner fin spacer disposed along a first inner sidewall of the first fin and a second inner fin spacer disposed along a second inner sidewall of the second fin;
a first outer fin spacer disposed along a first outer sidewall of the first fin, wherein the first outer fin spacer extends to a different height above the substrate than the first inner fin spacer;
a source/drain (S/D) structure extending from the first fin to the second fin, wherein the S/D structure includes a first epitaxial layer, a second epitaxial layer over the first epitaxial layer, and a third epitaxial layer over the second epitaxial layer, wherein the first, the second, and the third epitaxial layers include different dopant concentrations; and
an air gap disposed between the first and second inner fin spacers to interface the isolation feature and extending to the source/drain structure,
wherein the second epitaxial layer and the third epitaxial layer comprise five outer facets,
wherein a top outer facet of the five outer facets is disposed over the first fin and second fin and is substantially flat.
17. The device of claim 16 , wherein the first inner fin spacer, the second inner fin spacer and the isolation feature are exposed to the air gap.
18. The device of claim 16 , wherein the first, second and third epitaxial layers each include a material selected from the group consisting of silicon and silicon carbon, and
wherein the first, second and third epitaxial layers each include a dopant selected from the group consisting of arsenic and phosphorous.
19. The device of claim 16 , wherein the first, second and third epitaxial layers each include silicon germanium, and
wherein the first, second and third epitaxial layers each include a dopant selected from the group consisting of boron and indium.
20. The device of claim 16 , wherein the second epitaxial layer interfaces with both the first epitaxial layer and the third epitaxial layer.