IP Library › Granted Patent US 12,359,315
Granted Patent B2
US 12,359,315 · App. 16/748,299 · Granted Jul 15, 2025

Deposition of oxides and nitrides

Inventors: Henri Jussila (Espoo, FI); Chiyu Zhu (Helsinki, FI); Qi Xie (Leuven, BE); Jiyeon Kim (Helsinki, FI); Tom E. Blomberg (Vantaa, FI)
Assignee: ASM IP Holding B.V.
C23C16/45527C23C16/34C23C16/401C23C16/45553H01L21/02205H01L21/0228H01L21/02164H01L21/0217H01L21/02186
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Quick Facts
Patent No.
US 12,359,315
App. No.
16/748,299
Granted
Jul 15, 2025
Kind
B2
Abstract

Vapor deposition processes such as atomic layer deposition (ALD) processes employing a deposition enhancing precursor can be used to form a variety of oxide and nitride films, including metal oxide, metal nitride, metal oxynitride, silicon oxide and silicon nitride films. For example, the methods can be used to deposit transition metal nitrides, transition metal oxides, and silicon oxides and nitrides. In some embodiments the deposition enhancing precursor comprises a Group II metal such as Mg, Sr, Ba or Ca. Atomic layer deposition processes may comprise a deposition cycle comprising a first sub-cycle in which a substrate is contacted with a deposition enhancing precursor and an oxygen or nitrogen reactant and a second sub-cycle in which the substrate is contacted with a metal or silicon precursor and an oxygen or nitrogen reactant. In some embodiments the methods advantageously enable improved thin film formation, for example increased deposition rates.

Claims (6)

1. A thermal atomic layer deposition (ALD) process for forming a SiO 2 thin film comprising a plurality of deposition cycles, at least one deposition cycle comprising a first sub-cycle and a second sub-cycle, wherein:

the first sub-cycle comprises alternately and sequentially contacting the substrate with a deposition enhancing precursor comprising a Group II metal and one or more cyclopentadienyl ligands and an oxygen reactant; and

the second sub-cycle comprises alternately and sequentially contacting a substrate with a silicon halide precursor and the same oxygen reactant, and

wherein the SiO 2 thin film comprises less than about 10% at % of the Group II metal,

wherein the first sub-cycle and the second sub-cycle are each repeated two or more times in succession in the deposition cycle, and

wherein the process has a growth rate per deposition cycle that is at least 1.5 times greater than the growth rate per deposition cycle of a process comprising only the second sub-cycle and in which the substrate is not contacted with a deposition enhancing precursor.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 21, 2021
From: JUSSILA, HENRI; ZHU, CHIYU; XIE, QI; KIM, JIYEON; BLOMBERG, TOM E.
To: ASM IP HOLDING B.V.
Reel/Frame 054988/0927 →
Continuity (2)
Provisional Application 62805634 · Feb 14, 2019
Related Publication 20200263297A1 · Aug 20, 2020
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